IPA057N08N

Mfr. #:: IPA057N08N
制造商:: Infineon Technologies
描述:
生命周期:: 制造商新产品。
数据表:: IPA057N08N 数据表
交货:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

产品属性
属性值

制造商: 英飞凌科技

产品分类: 晶体管 - FET、MOSFET - 单

系列: OptiMOS 3

打包: 管子

部分别名: IPA057N08N3GXK IPA057N08N3GXKSA1 SP000454442

单位重量: 0.211644 oz

安装方式: 通孔

商品名: 优化MOS

包装盒: TO-220-3

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 39 W

最高工作温度: + 175 C

最低工作温度: - 55 C

秋季时间: 9 ns

上升时间: 42 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 60 A

Vds-漏-源-击穿电压: 80 V

Rds-On-Drain-Source-Resistance: 5.7 mOhms

晶体管极性: N通道

典型关断延迟时间: 36 ns

典型开启延迟时间: 17 ns

Qg-门电荷: 18 nC

通道模式: 增强

Tags: IPA057N08, IPA057, IPA05, IPA0, IPA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

型号	制造商	描述	库存	价格
IPA057N08N3GXKSA1 DISTI # IPA057N08N3GXKSA1-ND	Infineon Technologies AG	MOSFET N-CH 80V 60A TO220-3 RoHS: Compliant Min Qty: 1 Container: Tube	976In Stock	1000:$1.0168 500:$1.2272 100:$1.5778 10:$1.9640 1:$2.1700
IPA057N08N3 G DISTI # IPA057N08N3 G	Infineon Technologies AG	Trans MOSFET N-CH 80V 60A 3-Pin(3+Tab) TO-220FP (Alt: IPA057N08N3 G) RoHS: Compliant Min Qty: 500	Asia - 1000	500:$1.1283 1000:$1.0919 1500:$1.0578 2500:$1.0258 5000:$1.0105 12500:$0.9956 25000:$0.9812
IPA057N08N3GXK DISTI # IPA057N08N3GXKSA1	Infineon Technologies AG	Trans MOSFET N-CH 80V 60A 3-Pin(3+Tab) TO-220FP - Rail/Tube (Alt: IPA057N08N3GXKSA1) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	1000:$0.7339 2000:$0.7079 3000:$0.6819 5000:$0.6589 10000:$0.6479
IPA057N08N3GXKSA1 DISTI # 34AC1645	Infineon Technologies AG	MOSFET, N-CH, 80V, 60A, TO-220FP,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0049ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power RoHS Compliant: Yes	1360	1:$1.7700 10:$1.5000 100:$1.2000 500:$1.1100 1000:$0.9970 2500:$0.8100 5000:$0.7830
IPA057N08N3 G DISTI # 726-IPA057N08N3G	Infineon Technologies AG	MOSFET N-Ch 80V 60A TO220FP-3 OptiMOS 3 RoHS: Compliant	428	1:$1.8800 10:$1.6000 100:$1.2800 500:$1.1200
IPA057N08N3G	Infineon Technologies AG	Power Field-Effect Transistor, 60A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	437	1000:$0.8000 500:$0.8500 100:$0.8800 25:$0.9200 1:$0.9900
IPA057N08N3GXKSA1 DISTI # 8922107P	Infineon Technologies AG	MOSFET N-CHANNEL 80V 60A TO220-3 FP, TU	315	15:£1.1080 30:£1.0700 60:£1.0320 120:£0.8820
IPA057N08N3G	Infineon Technologies AG		118
IPA057N08N3GXKSA1 DISTI # 2781062	Infineon Technologies AG	MOSFET, N-CH, 80V, 60A, TO-220FP RoHS: Compliant	1375	5:£1.1100 25:£1.0300 100:£0.8820 250:£0.8530 500:£0.8240
IPA057N08N3GXKSA1 DISTI # 2781062	Infineon Technologies AG	MOSFET, N-CH, 80V, 60A, TO-220FP RoHS: Compliant	1360	5:$3.1100 25:$2.7100 100:$2.2100 250:$1.8700 500:$1.6100 1000:$1.5300 5000:$1.4500

相关产品

图片	型号	描述
	Mfr.#: IPA057N08N3 G OMO.#: OMO-IPA057N08N3-G	MOSFET N-Ch 80V 60A TO220FP-3 OptiMOS 3
	Mfr.#: IPA057N06N3 G OMO.#: OMO-IPA057N06N3-G	MOSFET N-Ch 60V 60A TO220FP-3 OptiMOS 3
	Mfr.#: IPA050N10NM5SXKSA1 OMO.#: OMO-IPA050N10NM5SXKSA1	MOSFET
	Mfr.#: IPA057N06N3GXKSA1 OMO.#: OMO-IPA057N06N3GXKSA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 60V 60A TO220-3-31
	Mfr.#: IPA057N08N3GXK OMO.#: OMO-IPA057N08N3GXK-1190	Trans MOSFET N-CH 80V 60A 3-Pin(3+Tab) TO-220FP - Rail/Tube (Alt: IPA057N08N3GXKSA1)
	Mfr.#: IPA057N06N OMO.#: OMO-IPA057N06N-1190	全新原装
	Mfr.#: IPA057N06N3-G OMO.#: OMO-IPA057N06N3-G-1190	全新原装
	Mfr.#: IPA057N06N3G OMO.#: OMO-IPA057N06N3G-1190	Power Field-Effect Transistor, 60A I(D), 60V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
	Mfr.#: IPA057N08N OMO.#: OMO-IPA057N08N-1190	全新原装
	Mfr.#: IPA057N08N3 OMO.#: OMO-IPA057N08N3-1190	全新原装