SI7923DN-T1-GE3

Mfr. #:: SI7923DN-T1-GE3
制造商:: Vishay
描述:: RF Bipolar Transistors MOSFET 30V 6.4A 2.8W 47mohm @ 10V
生命周期:: 制造商新产品。
数据表:: SI7923DN-T1-GE3 数据表
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更多信息:: SI7923DN-T1-GE3 更多信息

产品属性
属性值

制造商: 威世硅

产品分类: FET - 阵列

系列: 沟槽FETR

打包: Digi-ReelR 替代包装

部分别名: SI7923DN-GE3

安装方式: 贴片/贴片

包装盒: PowerPAKR 1212-8 Dual

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 2 Channel

供应商-设备-包: PowerPAKR 1212-8 Dual

配置: 双重的

FET型: 2 P-Channel (Dual)

最大功率: 1.3W

晶体管型: 2 P-Channel

漏源电压 Vdss: 30V

输入电容-Ciss-Vds: -

FET-Feature: 逻辑电平门

Current-Continuous-Drain-Id-25°C: 4.3A

Rds-On-Max-Id-Vgs: 47 mOhm @ 6.4A, 10V

Vgs-th-Max-Id: 3V @ 250μA

栅极电荷-Qg-Vgs: 21nC @ 10V

钯功耗: 1.3 W

最高工作温度: + 150 C

最低工作温度: - 55 C

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 4.3 A

Vds-漏-源-击穿电压: - 30 V

Rds-On-Drain-Source-Resistance: 47 mOhms

晶体管极性: P-通道

Tags: SI7923DN-T, SI7923, SI792, SI79, SI7

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7923DN-T1-GE3 描述

***et Europe: Trans MOSFET P-CH 30V 4.3A 8-Pin PowerPAK 1212 T/R

***ronik: DUAL -30V 6A 47mOhm PPAK

***: DUAL P-CHANNEL 30-V (D-S)

***ment14 APAC: DUAL P CHANNEL MOSFET, -30V, 6.4A; Trans; DUAL P CHANNEL MOSFET, -30V, 6.4A; Transistor Polarity:P Channel; Continuous Drain Current Id, P Channel:-4.3A; Drain Source Voltage Vds, P Channel:-30V; On Resistance Rds(on), P Channel:0.038ohm; Rds(on) Test Voltage Vgs:-4.5V

SI7923DN-T1-GE3 更多信息

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

型号	制造商	描述	库存	价格
SI7923DN-T1-GE3 DISTI # V72:2272_09216414	Vishay Intertechnologies	Trans MOSFET P-CH 30V 4.3A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	2740	1000:$1.2827 500:$1.2971 250:$1.3120 100:$1.3269 25:$1.3420 10:$1.3519 1:$1.4689
SI7923DN-T1-GE3 DISTI # SI7923DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2P-CH 30V 4.3A 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	18In Stock	10:$1.6180 1:$1.7900
SI7923DN-T1-GE3 DISTI # SI7923DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2P-CH 30V 4.3A 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SI7923DN-T1-GE3 DISTI # SI7923DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2P-CH 30V 4.3A 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$0.7573
SI7923DN-T1-GE3 DISTI # 25790072	Vishay Intertechnologies	Trans MOSFET P-CH 30V 4.3A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	2740	1000:$1.2827 500:$1.2971 250:$1.3120 100:$1.3269 25:$1.3420 10:$1.3519
SI7923DN-T1-GE3 DISTI # SI7923DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 4.3A 8-Pin PowerPAK 1212 T/R (Alt: SI7923DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 3000	3000:$8.1000 6000:$5.5862 9000:$4.1539 15000:$3.3750 30000:$3.0566 75000:$2.9455 150000:$2.8421
SI7923DN-T1-GE3 DISTI # SI7923DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 4.3A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7923DN-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.7419 6000:$0.7199 12000:$0.6909 18000:$0.6709 30000:$0.6529
SI7923DN-T1-GE3 DISTI # SI7923DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 4.3A 8-Pin PowerPAK 1212 T/R (Alt: SI7923DN-T1-GE3) RoHS: Compliant Min Qty: 1 Container: Tape and Reel	Europe - 0	1:€1.3469 10:€0.9659 25:€0.7839 50:€0.6929 100:€0.6829 500:€0.6709 1000:€0.6629
SI7923DN-T1-GE3 DISTI # 26R1943	Vishay Intertechnologies	DUAL P CHANNEL MOSFET, -30V, -6.4A,Transistor Polarity:Dual P Channel,Continuous Drain Current Id:-6.4A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):75mohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V , RoHS Compliant: Yes	0	1:$1.5900 25:$1.3200 50:$1.1700 100:$1.0200 250:$0.9570 500:$0.8930 1000:$0.7400
SI7923DN-T1-GE3 DISTI # 33P5450	Vishay Intertechnologies	DUAL P CHANNEL MOSFET, -30V, 6.4A, FULL REEL,Transistor Polarity:Dual P Channel,Continuous Drain Current Id:6.4A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):75mohm,Rds(on) Test Voltage Vgs:-4.5V,No. of Pins:8Pins , RoHS Compliant: Yes	0	1:$0.7550 3000:$0.7500 6000:$0.7140 12000:$0.6330
SI7923DN-T1-GE3 DISTI # 781-SI7923DN-GE3	Vishay Intertechnologies	MOSFET -30V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant	0	1:$1.5900 10:$1.3200 100:$1.0200 500:$0.8930 1000:$0.7400 3000:$0.6890
SI7923DNT1GE3	Vishay Intertechnologies	RoHS: Compliant	Europe - 3000
SI7923DN-T1-GE3 DISTI # C1S803604015339	Vishay Intertechnologies	MOSFETs	2740	250:$1.3120 100:$1.3269 25:$1.3420 10:$1.3519
SI7923DN-T1-GE3 DISTI # 1871392	Vishay Intertechnologies	DUAL P CHANNEL MOSFET, -30V, -6.4A RoHS: Compliant	0	3000:$2.9300 6000:$2.4300 9000:$1.9000
SI7923DN-T1-GE3 DISTI # 1871392	Vishay Intertechnologies	DUAL P CHANNEL MOSFET, -30V, -6.4A RoHS: Compliant	0	3000:£0.6500
SI7923DN-T1-GE3	Vishay Intertechnologies	MOSFET -30V Vds 20V Vgs PowerPAK 1212-8	Americas -

图片	型号	描述
	Mfr.#: SI7923DN-T1-E3 OMO.#: OMO-SI7923DN-T1-E3	MOSFET -30V Vds 20V Vgs PowerPAK 1212-8
	Mfr.#: SI7923DN-T1-GE3 OMO.#: OMO-SI7923DN-T1-GE3	MOSFET -30V Vds 20V Vgs PowerPAK 1212-8
	Mfr.#: SI7923DN-T1-GE3 OMO.#: OMO-SI7923DN-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET 30V 6.4A 2.8W 47mohm @ 10V
	Mfr.#: SI7923DN-T1-E3-CUT TAPE OMO.#: OMO-SI7923DN-T1-E3-CUT-TAPE-1190	全新原装
	Mfr.#: SI7923DN OMO.#: OMO-SI7923DN-1190	全新原装
	Mfr.#: SI7923DN-T1-E3 OMO.#: OMO-SI7923DN-T1-E3-VISHAY	MOSFET 2P-CH 30V 4.3A 1212-8
	Mfr.#: SI7923DN-T1-E3CT-ND OMO.#: OMO-SI7923DN-T1-E3CT-ND-1190	全新原装

SI7923DN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes