IRF7904TRPBF

IRF7904TRPBF
Mfr. #:
IRF7904TRPBF
制造商:
Infineon / IR
描述:
MOSFET MOSFT DUAL NCh 30V 7.6A
生命周期:
制造商新产品。
数据表:
IRF7904TRPBF 数据表
交货:
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支付:
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HTML Datasheet:
IRF7904TRPBF DatasheetIRF7904TRPBF Datasheet (P4-P6)IRF7904TRPBF Datasheet (P7-P9)IRF7904TRPBF Datasheet (P10)
ECAD Model:
更多信息:
IRF7904TRPBF 更多信息
产品属性
属性值
制造商:
英飞凌
产品分类:
MOSFET
RoHS:
Y
技术:
安装方式:
贴片/贴片
包装/案例:
SO-8
通道数:
2 Channel
晶体管极性:
N通道
Vds - 漏源击穿电压:
30 V
Id - 连续漏极电流:
7.6 A, 11 A
Rds On - 漏源电阻:
14.5 mOhms, 10 mOhms
Vgs th - 栅源阈值电压:
2.25 V
Vgs - 栅源电压:
20 V
Qg - 门电荷:
7.5 nC, 14 nC
最低工作温度:
- 55 C
最高工作温度:
+ 150 C
Pd - 功耗:
1.4 W, 2 W
配置:
双重的
打包:
卷轴
高度:
1.75 mm
长度:
4.9 mm
晶体管类型:
2 N-Channel
宽度:
3.9 mm
品牌:
英飞凌/红外
正向跨导 - 最小值:
17 S, 23 S
秋季时间:
3.2 ns, 4.6 ns
产品类别:
MOSFET
上升时间:
7.3 ns, 10 ns
出厂包装数量:
4000
子类别:
MOSFET
典型关断延迟时间:
10 ns, 15 ns
典型的开启延迟时间:
6.9 ns, 7.8 ns
第 # 部分别名:
SP001575344
单位重量:
0.017870 oz
Tags
IRF7904T, IRF7904, IRF790, IRF79, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    A***v
    A***v
    RU

    All ok

    2019-04-05
    L***a
    L***a
    MX

    More than two months have passed and i did not receive the package, however the order is shown as finished, first time this happens to me i don't recommend the seller not to buy back on aliexpress.

    2019-02-27
***Yang
Transistor MOSFET Array Dual N-CH 30V 7.6A/11A 8-Pin SOIC T/R - Tape and Reel
***ure Electronics
Dual N-Channel 30 V 16.2 mOhm 7.5 nC HEXFET® Power Mosfet - SOIC-8
***ark
MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10.8mohm; Rds(on) Test Voltage Vgs:10V; No. of Pins:8; Leaded Process Compatible:Yes; Package / Case:SO-8
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Thermal resistance to PCB; Compatible with Existing Surface Mount Techniques; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Dual N-Channel MOSFET
***nell
MOSFET, DUAL N CH, 30V, 11A, SOIC-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0086ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.25V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
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Single N-Channel 30 V 17.5 mOhm 9.3 nC HEXFET® Power Mosfet - SOIC-8
***icontronic
Power Field-Effect Transistor, 11A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
*** Source Electronics
Trans MOSFET N-CH Si 30V 11A 8-Pin SOIC T/R / MOSFET N-CH 30V 11A 8-SOIC
***ark
N Channel Mosfet, 30V, 11A, Soic; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11A; On Resistance Rds(On):0.0119Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
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IRF7807ZPBF N-channel MOSFET Transistor, 11 A, 30 V, 8-Pin SOIC | Infineon IRF7807ZPBF
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Mosfet Transistor, N Channel, 11 A, 30 V, 13.8 Mohm, 10 V, 1.8 V
***ure Electronics
Single N-Channel 30 V 18.2 mOhm 11 nC HEXFET® Power Mosfet - SOIC-8
***icontronic
Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0138ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissi
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 11 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 13.8 / Gate-Source Voltage V = 20 / Fall Time ns = 3.1 / Rise Time ns = 6.2 / Turn-OFF Delay Time ns = 10 / Turn-ON Delay Time ns = 6.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5
***et Japan
Transistor MOSFET Array Dual N-CH 30V 9.1A/11A 8-Pin SOIC T/R
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Dual N-Channel 30 V 20.5/13.7 mOhm 10/21 nC HEXFET® Power Mosfet - SOIC-8
***ineon SCT
30V Dual N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package, SO8, RoHS
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Thermal resistance to PCB; Compatible with Existing Surface Mount Techniques; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Dual N-Channel MOSFET
***nell
MOSFET,NN CH,30V,9.1A,SO8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0137ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Pow
***trelec
Transistor Polarity = N-Channel / Configuration = Dual / Drain-Source Voltage (Vds) V = 30 / Gate-Source Voltage V = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2
***ure Electronics
N-Channel 30 V 11.9 mOhm Surface Mount Schottky Diode Mosfet - SOIC-8
***ark
Mosfet,+Sch,n Channel,30V,11A,so8; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11A; On Resistance Rds(On):0.0085Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***nell
MOSFET,+SCH,N CH,30V,11A,SO8; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0085ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 1.55W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: 11A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Voltage Vgs Max: 20V
***icroelectronics
Dual N-channel 30 V, 0.017 Ohm typ., 8 A STripFET(TM) II Power MOSFET in a SO-8 package
***et
Transistor MOSFET Array Dual N-CH 30V 8A 8-Pin SOIC T/R
*** Source Electronics
Trans MOSFET N-CH 30V 8A 8-Pin SO N T/R / MOSFET 2N-CH 30V 8A 8-SOIC
***ure Electronics
Dual N-Channel 30 V 0.02 O 12.5 nC Surface Mount STripFET™ II Mosfet- SOIC-8
***ment14 APAC
DUAL N CHANNEL MOSFET, 30V, SOIC; Transi; DUAL N CHANNEL MOSFET, 30V, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:8A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.017ohm; Rds(on) Test Voltage Vgs:10V
***ure Electronics
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***(Formerly Allied Electronics)
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***ark
Drain Source Voltage Vds:30V; Continuous Drain Current Id:10A; Product Range:-; Automotive Qualification Standard:-; Msl:- Rohs Compliant: No
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
型号 制造商 描述 库存 价格
IRF7904TRPBF
DISTI # V72:2272_13890544
Infineon Technologies AGTrans MOSFET N-CH 30V 7.6A/11A 8-Pin SOIC T/R
RoHS: Compliant
1304
  • 1000:$0.3577
  • 500:$0.3780
  • 250:$0.4200
  • 100:$0.4666
  • 25:$0.5800
  • 10:$0.5827
  • 1:$0.6584
IRF7904TRPBF
DISTI # IRF7904TRPBFCT-ND
Infineon Technologies AGMOSFET 2N-CH 30V 7.6A/11A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2469In Stock
  • 1000:$0.4975
  • 500:$0.6165
  • 100:$0.7801
  • 10:$0.9730
  • 1:$1.0900
IRF7904TRPBF
DISTI # IRF7904TRPBFDKR-ND
Infineon Technologies AGMOSFET 2N-CH 30V 7.6A/11A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2469In Stock
  • 1000:$0.4975
  • 500:$0.6165
  • 100:$0.7801
  • 10:$0.9730
  • 1:$1.0900
IRF7904TRPBF
DISTI # IRF7904TRPBFTR-ND
Infineon Technologies AGMOSFET 2N-CH 30V 7.6A/11A 8-SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 4000:$0.4541
IRF7904TRPBF
DISTI # 26733385
Infineon Technologies AGTrans MOSFET N-CH 30V 7.6A/11A 8-Pin SOIC T/R
RoHS: Compliant
1304
  • 1000:$0.3577
  • 500:$0.3780
  • 250:$0.4200
  • 100:$0.4666
  • 25:$0.5800
  • 24:$0.5827
IRF7904TRPBF
DISTI # IRF7904TRPBF
Infineon Technologies AGTrans MOSFET N-CH 30V 7.6A/11A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7904TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel
Americas - 0
  • 4000:$0.3019
  • 8000:$0.2909
  • 16000:$0.2809
  • 24000:$0.2709
  • 40000:$0.2659
IRF7904TRPBF
DISTI # IRF7904TRPBF
Infineon Technologies AGTrans MOSFET N-CH 30V 7.6A/11A 8-Pin SOIC T/R (Alt: IRF7904TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel
Asia - 0
    IRF7904TRPBF
    DISTI # SP001575344
    Infineon Technologies AGTrans MOSFET N-CH 30V 7.6A/11A 8-Pin SOIC T/R (Alt: SP001575344)
    RoHS: Compliant
    Min Qty: 4000
    Container: Tape and Reel
    Europe - 0
    • 4000:€0.4479
    • 8000:€0.3669
    • 16000:€0.3359
    • 24000:€0.3099
    • 40000:€0.2879
    IRF7904TRPBF
    DISTI # 13AC9210
    Infineon Technologies AGMOSFET, DUAL N CH, 30V, 11A, SOIC-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:11A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0086ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.25V,PowerRoHS Compliant: Yes580
    • 1:$0.8700
    • 10:$0.7350
    • 25:$0.6780
    • 50:$0.6220
    • 100:$0.5650
    • 250:$0.5320
    • 500:$0.4990
    • 1000:$0.3940
    IRF7904TRPBF
    DISTI # 70018976
    Infineon Technologies AGMOSFET,DUAL N-CHANNEL,30V,7.6A,SO-8
    RoHS: Compliant
    0
    • 4000:$0.4900
    IRF7904TRPBF
    DISTI # 942-IRF7904TRPBF
    Infineon Technologies AGMOSFET MOSFT DUAL NCh 30V 7.6A
    RoHS: Compliant
    7242
    • 1:$0.8700
    • 10:$0.7350
    • 100:$0.5650
    • 500:$0.4990
    • 1000:$0.3940
    • 4000:$0.3500
    • 8000:$0.3370
    IRF7904TRPBFInternational RectifierPower Field-Effect Transistor, 11A I(D), 30V, 10.8ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant
    4000
    • 1000:$0.3400
    • 500:$0.3600
    • 100:$0.3800
    • 25:$0.3900
    • 1:$0.4200
    IRF7904TRPBF
    DISTI # 2725919
    Infineon Technologies AGMOSFET, DUAL N CH, 30V, 11A, SOIC-8
    RoHS: Compliant
    580
    • 1:$1.3800
    • 10:$1.1700
    • 100:$0.8940
    • 500:$0.7900
    • 1000:$0.6240
    • 4000:$0.6190
    IRF7904TRPBF
    DISTI # XSLY00000000861
    INFINEON/IRSO-8
    RoHS: Compliant
    4000
    • 4000:$0.3700
    IRF7904TRPBF
    DISTI # 2725919
    Infineon Technologies AGMOSFET, DUAL N CH, 30V, 11A, SOIC-8
    RoHS: Compliant
    700
    • 5:£0.6360
    • 25:£0.5730
    • 100:£0.4360
    • 250:£0.4110
    • 500:£0.3850
    IRF7904TRPBF
    DISTI # C1S322000486722
    Infineon Technologies AGTrans MOSFET N-CH 30V 7.6A/11A 8-Pin SOIC T/R
    RoHS: Compliant
    1304
    • 250:$0.4200
    • 100:$0.4666
    • 25:$0.5800
    • 10:$0.5827
    图片 型号 描述
    FDS6681Z

    Mfr.#: FDS6681Z

    OMO.#: OMO-FDS6681Z

    MOSFET 30V P-Channel PowerTrench MOSFET
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    Mfr.#: UA78M33CKVURG3

    OMO.#: OMO-UA78M33CKVURG3

    Linear Voltage Regulators 3.3 V 500mA Fix Pos Voltage Regulator
    MCP1804T-5002I/MB

    Mfr.#: MCP1804T-5002I/MB

    OMO.#: OMO-MCP1804T-5002I-MB

    LDO Voltage Regulators 150mA LDO Vin 28V Vout =5.0V
    1812Y2K00103KXT

    Mfr.#: 1812Y2K00103KXT

    OMO.#: OMO-1812Y2K00103KXT

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 2kV 0.01uF X7R 1812 10percent
    C1608X7R1A225K080AC

    Mfr.#: C1608X7R1A225K080AC

    OMO.#: OMO-C1608X7R1A225K080AC

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 10V 2.2uF X7R 10% T: 0.8mm
    MUSBR-3593-M0

    Mfr.#: MUSBR-3593-M0

    OMO.#: OMO-MUSBR-3593-M0

    USB Connectors Rugged USB 3.0 A Vert Standard Shell
    PE1206FKM470R02Z

    Mfr.#: PE1206FKM470R02Z

    OMO.#: OMO-PE1206FKM470R02Z

    Current Sense Resistors - SMD 0.02 ohm 1% 75 ppm AEC-Q200
    SDB-25PFFP-SL8001

    Mfr.#: SDB-25PFFP-SL8001

    OMO.#: OMO-SDB-25PFFP-SL8001

    D-Sub Standard Connectors D Sub Connector REC 25P Steel Body
    MCP1804T-5002I/MB

    Mfr.#: MCP1804T-5002I/MB

    OMO.#: OMO-MCP1804T-5002I-MB-MICROCHIP-TECHNOLOGY

    IC REG LINEAR 5V 150MA SOT89-3
    PE1206FKM470R02Z

    Mfr.#: PE1206FKM470R02Z

    OMO.#: OMO-PE1206FKM470R02Z-YAGEO

    Chip Resistor Surface Mount
    可用性
    库存:
    Available
    订购:
    1989
    输入数量:
    IRF7904TRPBF的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格(美元)
    数量
    单价
    小计金额
    1
    US$0.86
    US$0.86
    10
    US$0.74
    US$7.35
    100
    US$0.56
    US$56.50
    500
    US$0.50
    US$249.50
    1000
    US$0.39
    US$394.00
    从...开始
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