BSP318SL6327

BSP318SL6327
Mfr. #:
BSP318SL6327
制造商:
Infineon Technologies AG
描述:
Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
生命周期:
制造商新产品。
数据表:
BSP318SL6327 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
产品属性
属性值
Tags
BSP318SL, BSP318S, BSP318, BSP31, BSP3, BSP
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ponent Sense
Trans MOSFET N-CH 60V 2.6A 4-Pin(3+Tab) SOT-223 T/R
***ment14 APAC
MOSFET, N, LOGIC, REEL 1K
***nell
MOSFET, N, LOGIC, REEL 1K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:2.6A; Resistance, Rds On:0.09ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.6V; Case Style:SOT-223; Termination Type:SMD; Current, Idm Pulse:10.4A; External Depth:7.3mm; External Length / Height:1.7mm; Power Dissipation:1.8W; Power, Pd:1.8W; Power, Ptot:1.8W; Quantity, Reel:1000; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Transistors, No. of:1; Voltage, Vds Max:60V; Voltage, Vgs th Max:2V; Width, External:6.7mm; Width, Tape:12mm
型号 制造商 描述 库存 价格
BSP318SL6327HTSA1
DISTI # BSP318SL6327HTSA1TR-ND
Infineon Technologies AGMOSFET N-CH 60V 2.6A SOT-223
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)
Limited Supply - Call
    BSP318SL6327HTSA1
    DISTI # BSP318SL6327HTSA1CT-ND
    Infineon Technologies AGMOSFET N-CH 60V 2.6A SOT-223
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      BSP318SL6327HTSA1
      DISTI # BSP318SL6327HTSA1DKR-ND
      Infineon Technologies AGMOSFET N-CH 60V 2.6A SOT-223
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        BSP318SL6327HTSA1
        DISTI # BSP318SL6327HTSA1
        Infineon Technologies AGMOSFET N-CH 60V 2.6A SOT-223 - Bulk (Alt: BSP318SL6327HTSA1)
        RoHS: Compliant
        Min Qty: 1667
        Container: Bulk
        Americas - 0
        • 16670:$0.1899
        • 8335:$0.1939
        • 5001:$0.1999
        • 3334:$0.2079
        • 1667:$0.2159
        BSP318S L6327
        DISTI # 726-BSP318SL6327
        Infineon Technologies AGMOSFET N-Ch 60V 2.6A SOT-223-3
        RoHS: Compliant
        0
          BSP318SL6327HTSA1Infineon Technologies AGPower Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
          RoHS: Not Compliant
          5798400
          • 1000:$0.2000
          • 500:$0.2100
          • 100:$0.2200
          • 25:$0.2300
          • 1:$0.2400
          BSP318SL6327
          DISTI # 1562497
          Infineon Technologies AG 
          RoHS: Compliant
          0
          • 1:$386.1100
          BSP318SL6327Infineon Technologies AGPower Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
          RoHS: Compliant
          6000
            图片 型号 描述
            BSP318S H6327

            Mfr.#: BSP318S H6327

            OMO.#: OMO-BSP318S-H6327

            MOSFET N-Ch 60V 2.6A SOT-223-3
            BSP318SH6327XTSA1

            Mfr.#: BSP318SH6327XTSA1

            OMO.#: OMO-BSP318SH6327XTSA1

            MOSFET N-Ch 60V 2.6A SOT-223-3
            BSP318

            Mfr.#: BSP318

            OMO.#: OMO-BSP318-1190

            全新原装
            BSP318 , TEA1795T/N1 , B

            Mfr.#: BSP318 , TEA1795T/N1 , B

            OMO.#: OMO-BSP318-TEA1795T-N1-B-1190

            全新原装
            BSP318S

            Mfr.#: BSP318S

            OMO.#: OMO-BSP318S-1190

            MOSFET, N CHANNEL, 60V, 2.6A, SOT-223, Transistor Polarity:N Channel, Continuous Drain Current Id:2.6A, Drain Source Voltage Vds:60V, On Resistance Rds(on):0.07ohm, Rds(on) Test Voltage Vgs:4.5V,
            BSP318S H6327

            Mfr.#: BSP318S H6327

            OMO.#: OMO-BSP318S-H6327-1190

            Trans MOSFET N-CH 60V 2.6A Automotive 4-Pin(3+Tab) SOT-223 T/R
            BSP318S L6327

            Mfr.#: BSP318S L6327

            OMO.#: OMO-BSP318S-L6327-1190

            MOSFET N-Ch 60V 2.6A SOT-223-3
            BSP318S-E6327

            Mfr.#: BSP318S-E6327

            OMO.#: OMO-BSP318S-E6327-1190

            INSTOCK
            BSP318SE6327

            Mfr.#: BSP318SE6327

            OMO.#: OMO-BSP318SE6327-1190

            MOSFET N-Ch 60V 2.6A SOT-223-3
            BSP318SH6327

            Mfr.#: BSP318SH6327

            OMO.#: OMO-BSP318SH6327-1190

            Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
            可用性
            库存:
            Available
            订购:
            3500
            输入数量:
            BSP318SL6327的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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            100
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            500
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            1000
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