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FDMC6679AZ

FDMC6679AZ
Mfr. #:
FDMC6679AZ
制造商:
ON Semiconductor / Fairchild
描述:
MOSFET -30V P-Channel Power Trench
生命周期:
制造商新产品。
数据表:
FDMC6679AZ 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商：
安森美半导体
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
Power-33-8
通道数：
1 Channel
晶体管极性：
P-通道
Vds - 漏源击穿电压：
30 V
Id - 连续漏极电流：
20 A
Rds On - 漏源电阻：
10 mOhms
Vgs th - 栅源阈值电压：
1.8 V
Vgs - 栅源电压：
25 V
Qg - 门电荷：
37 nC
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
41 W
配置：
单身的
商品名：
动力战壕
打包：
卷轴
高度：
0.8 mm
长度：
3.3 mm
系列：
FDMC6679AZ
晶体管类型：
1 P-Channel
宽度：
3.3 mm
品牌：
安森美半导体/飞兆半导体
正向跨导 - 最小值：
46 S
产品类别：
MOSFET
出厂包装数量：
3000
子类别：
MOSFET
单位重量：
0.005832 oz
Tags
FDMC667, FDMC66, FDMC6, FDMC, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    M***r
    M***r
    AT

    I order in same time with other cheaper shipping company. Arrived on same day!

    2019-03-16
    P***s
    P***s
    BE

    All OK

    2019-02-09
    A***v
    A***v
    RU

    The boards are good, everything is triggered by a short circuit, twists the interskol on the second transmission long self-tapping on hurray, also twists them. It took a long time, you need to collect goods for a large amount will send faster than 500 rubles

    2019-07-05
    I***h
    I***h
    RU

    Item not received

    2019-05-20
***itex
P-MOSFET transistor FDMC6679AZ Fairchild; -30V; -20A; 10mOhm; SMD MLP 3.3x3.3
***emi
P-Channel Power Trench® MOSFET -30V, -20A, 10mΩ
*** Source Electronics
Trans MOSFET P-CH Si 30V 11.5A 8-Pin WDFN EP T/R / MOSFET P-CH 30V POWER33
***rchild Semiconductor
The FDMC6679AZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection.
***nell
MOSFET, P CH, 30V, 20A, MLP 3.3X3.3; Transistor Polarity:P Channel; Continuous Drain Current Id:-20A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0086ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.8V; Power Dissipation Pd:41W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***icroelectronics
N-channel 60 V, 0.08 Ohm typ., 12 A STripFET II Power MOSFET in a IPAK package
***ark
Mosfet, N-Ch, 60V, 12A, To-252-3; Transistor Polarity:n Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.06Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Rohs Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 12A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***ical
Trans MOSFET N-CH 550V 2.4A 3-Pin(2+Tab) DPAK Tube
*** Electronics
COOLMOS N-CHANNEL POWER MOSFET
***va Crawler
N-channel 600 V, 7.3 Ohm typ., 1 A SuperMESH Power MOSFET in IPAK package
***r Electronics
Power Field-Effect Transistor, 1A I(D), 600V, 8.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ment14 APAC
MOSFET, N CH, 600V, 1A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:500mA; Drain Source Voltage Vds:600V; On Resistance Rds(on):8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:30W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:1A; Package / Case:IPAK; Power Dissipation Pd:30W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
***icroelectronics
N-channel 525 V, 2.5 A, 2.1 Ohm typ., SuperMESH3(TM) Power MOSFET in DPAK package
***ure Electronics
N-Channel 525 V 2.6 Ohm Surface Mount SuperMesh III Power MosFet - TO-252
***r Electronics
Power Field-Effect Transistor, 2.5A I(D), 525V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***ical
Trans MOSFET N-CH 700V 5.4A 3-Pin(3+Tab) TO-251 Tube
***ark
Mosfet, N-Ch, 700V, 5.4A, To-251; Transistor Polarity:n Channel; Continuous Drain Current Id:5.4A; Drain Source Voltage Vds:700V; On Resistance Rds(On):1.26Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
CoolMOS CE is a technology platform of Infineons market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. With the extended family, Infineon offers 600V, 650V and 700V devices targeting low power chargers for mobile devices and power tools, LCD, LED TV and LED lighting applications. | Summary of Features: Thermal behavior; 90C on device, open case; 50C/70C close case temperature; EMI within EN55022B standard; Ease of use and fast design-in | Benefits: Low conduction losses from large margin between R DS(on) typical to nominal; Low switching losses from optimized output capacitance (E oss); Optimized EMI to balance switching speed and EMI behavior; Good controllability given the integrated R g | Target Applications: Low power chargers; Adapters; PC silverbox; LCD TV; LED retrofit; LED drivers
***ineon SCT
Single N-Channel 650 V 1.5 Ohm 9.4 nC CoolMOS Power Mosfet - TO-251, PG-TO251-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 5A I(D), 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***ineon
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
型号 制造商 描述 库存 价格
FDMC6679AZ
DISTI # FDMC6679AZFSTR-ND		ON SemiconductorMOSFET P-CH 30V POWER33
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.3896
FDMC6679AZ
DISTI # FDMC6679AZFSCT-ND		ON SemiconductorMOSFET P-CH 30V POWER33
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.4300
  • 500:$0.5446
  • 100:$0.7023
  • 10:$0.8890
  • 1:$1.0000
FDMC6679AZ
DISTI # FDMC6679AZFSDKR-ND		ON SemiconductorMOSFET P-CH 30V POWER33
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.4300
  • 500:$0.5446
  • 100:$0.7023
  • 10:$0.8890
  • 1:$1.0000
FDMC6679AZ
DISTI # FDMC6679AZ		ON SemiconductorTrans MOSFET P-CH 30V 11.5A 8-Pin MLP EP T/R (Alt: FDMC6679AZ)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.4879
  • 6000:€0.3999
  • 12000:€0.3659
  • 18000:€0.3379
  • 30000:€0.3139
FDMC6679AZ
DISTI # FDMC6679AZ		ON SemiconductorTrans MOSFET P-CH 30V 11.5A 8-Pin MLP EP T/R - Tape and Reel (Alt: FDMC6679AZ)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.3299
  • 6000:$0.3279
  • 12000:$0.3239
  • 18000:$0.3199
  • 30000:$0.3119
FDMC6679AZ
DISTI # FDMC6679AZ		ON SemiconductorTrans MOSFET P-CH 30V 11.5A 8-Pin MLP EP T/R (Alt: FDMC6679AZ)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    FDMC6679AZ
    DISTI # 88T3264    		ON SemiconductorMOSFET, P CHANNEL, 30V, 20A, MLP 3.3X3.3,Transistor Polarity:P Channel,Continuous Drain Current Id:-20A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0086ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.8V RoHS Compliant: Yes0
    • 1:$0.8400
    • 10:$0.7090
    • 25:$0.6540
    • 50:$0.5990
    • 100:$0.5440
    • 250:$0.5130
    • 500:$0.4810
    • 1000:$0.3800
    FDMC6679AZ
    DISTI # 64R3011    		ON SemiconductorST3 PCH WITH ZENER / REEL0
    • 1:$0.3560
    • 9000:$0.3430
    • 24000:$0.3330
    FDMC6679AZ
    DISTI # 512-FDMC6679AZ    		ON SemiconductorMOSFET -30V P-Channel Power Trench
    RoHS: Compliant    		396
    • 1:$0.8400
    • 10:$0.7090
    • 100:$0.5440
    • 500:$0.4810
    • 1000:$0.3800
    • 3000:$0.3370
    • 9000:$0.3240
    FDMC6679AZ
    DISTI # 7599522P    		ON SemiconductorMOSFET P-CHANNEL 30V 11.5A MLP8EP, RL5735
    • 50:£0.3840
    • 750:£0.2600
    • 1500:£0.2440
    • 3000:£0.2380
    FDMC6679AZFairchild Semiconductor Corporation 5950
      FDMC6679AZ
      DISTI # 2083251      		ON SemiconductorMOSFET, P CH, 30V, 20A, MLP 3.3X3.3
      RoHS: Compliant      		320
      • 5:£0.6150
      • 25:£0.5570
      • 100:£0.4190
      • 250:£0.3950
      • 500:£0.3710
      FDMC6679AZ
      DISTI # 2083251      		ON SemiconductorMOSFET, P CH, 30V, 20A, MLP 3.3X3.3
      RoHS: Compliant      		0
      • 1:$1.3400
      • 10:$1.1300
      • 100:$0.8610
      • 500:$0.7620
      • 1000:$0.6020
      • 3000:$0.5340
      • 9000:$0.5130
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      可用性
      库存:
      57
      订购:
      2040
      输入数量:
      FDMC6679AZ的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格（美元）
      数量
      单价
      小计金额
      1
      US$0.83
      US$0.83
      10
      US$0.71
      US$7.09
      100
      US$0.54
      US$54.40
      500
      US$0.48
      US$240.50
      1000
      US$0.38
      US$380.00
      由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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