MR4A16BMA35

MR4A16BMA35
Mfr. #:
MR4A16BMA35
制造商:
Everspin Technologies
描述:
IC RAM 16M PARALLEL 48FBGA
生命周期:
制造商新产品。
数据表:
MR4A16BMA35 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
MR4A16BMA35 更多信息
产品属性
属性值
制造商
Everspin 技术公司
产品分类
记忆
系列
MR4A16B
打包
托盘替代包装
安装方式
贴片/贴片
包装盒
BGA-48
工作温度
0°C ~ 70°C (TA)
界面
平行线
电压供应
3 V ~ 3.6 V
供应商-设备-包
48-FBGA (10x10)
内存大小
16M (1M x 16)
内存型
MRAM(磁阻RAM)
速度
35ns
访问时间
35 ns
格式化内存
内存
最高工作温度
+ 70 C
最低工作温度
0 C
工作电源电流
110 mA
接口类型
平行线
组织
1 M x 16
数据总线宽度
16 bit
最大电源电压
3.6 V
电源电压最小值
3 V
Tags
MR4A16B, MR4A1, MR4A, MR4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    N***.
    N***.
    RU

    As in the picture-in a box and with an annotation.

    2019-05-13
    A***n
    A***n
    RU

    Received, quite high-quality products.

    2019-07-24
***ure Electronics
MR4A16B Series 1 M x 16 Bit 3.3 V 35 ns Asynchronous MRAM Memory - BGA-48
***ical
MRAM 16Mbit Parallel Interface 3.3V 48-Pin FBGA Tray
***i-Key
IC RAM 16MBIT PARALLEL 48FBGA
***S
vpe: 168/tray/bga
MR4A08B / MR4A16B 16Mb Parallel MRAMs
Everspin Technologies MR4A08B and MR4A16B 16Mb Parallel MRAM devices provide SRAM compatible 35ns read/write timing with unlimited endurance. The Everspin Technologies MR4A08B is a 16,777,216-bit Magnetoresistive Random Access Memory (MRAM) device organized as 2,097,152 words of 8 bits. 
Magnetoresistive Random Access Memory (MRAM)
Everspin Technologies Magnetoresistive Random Access Memory (MRAM) uses a 1 Transistor – 1 Magnetic Tunnel Junction (1T-1MTJ) architecture. These MRAM devices offer significantly long Data Retention (20+ years) and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.
Everspin MRAM
型号 制造商 描述 库存 价格
MR4A16BMA35
DISTI # V99:2348_06206782
Everspin TechnologiesMRAM 16Mbit Parallel 3.3V 48-Pin FBGA Tray
RoHS: Compliant
56
  • 250:$22.1700
  • 100:$23.0500
  • 50:$25.9800
  • 25:$26.8100
  • 10:$27.3300
  • 5:$28.5900
  • 1:$29.6300
MR4A16BMA35
DISTI # 819-1053-ND
Everspin TechnologiesIC RAM 16M PARALLEL 48FBGA
RoHS: Compliant
Min Qty: 1
Container: Tray
3654In Stock
  • 368:$23.8336
  • 184:$24.0307
  • 50:$27.3100
  • 25:$28.2060
  • 10:$29.2100
  • 1:$31.0700
MR4A16BMA35R
DISTI # MR4A16BMA35R-ND
Everspin TechnologiesIC RAM 16M PARALLEL 48FBGA
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$24.0996
MR4A16BMA35
DISTI # 26887010
Everspin TechnologiesMRAM 16Mbit Parallel 3.3V 48-Pin FBGA Tray
RoHS: Compliant
56
  • 50:$25.9800
  • 25:$26.8100
  • 10:$27.3300
  • 5:$28.5900
  • 1:$29.6300
MR4A16BMA35
DISTI # 27093916
Everspin TechnologiesMRAM 16Mbit Parallel 3.3V 48-Pin FBGA Tray
RoHS: Compliant
7
  • 1:$25.3800
MR4A16BMA35
DISTI # 936-MR4A16BMA35
Everspin TechnologiesNVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
RoHS: Compliant
253
  • 1:$31.5400
  • 5:$30.6100
  • 10:$29.3700
  • 25:$29.0500
  • 50:$28.3300
  • 100:$24.8700
  • 250:$24.0300
MR4A16BMA35R
DISTI # 936-MR4A16BMA35R
Everspin TechnologiesNVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
RoHS: Compliant
0
    图片 型号 描述
    MR4A16BUYS45

    Mfr.#: MR4A16BUYS45

    OMO.#: OMO-MR4A16BUYS45

    NVRAM 16Mb 3.3V 45ns 1Mx16 Parallel MRAM
    MR4A16BCYS35

    Mfr.#: MR4A16BCYS35

    OMO.#: OMO-MR4A16BCYS35

    NVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
    MR4A16BCMA35

    Mfr.#: MR4A16BCMA35

    OMO.#: OMO-MR4A16BCMA35

    NVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
    MR4A16BYS35R

    Mfr.#: MR4A16BYS35R

    OMO.#: OMO-MR4A16BYS35R

    NVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
    MR4A16BUYS45R

    Mfr.#: MR4A16BUYS45R

    OMO.#: OMO-MR4A16BUYS45R

    NVRAM 16Mb 3.3V 45ns 1Mx16 Parallel MRAM
    MR4A16BYS35

    Mfr.#: MR4A16BYS35

    OMO.#: OMO-MR4A16BYS35

    NVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
    MR4A16BCYS35R

    Mfr.#: MR4A16BCYS35R

    OMO.#: OMO-MR4A16BCYS35R-EVERSPIN-TECHNOLOGIES

    NVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
    MR4A16BYS35R

    Mfr.#: MR4A16BYS35R

    OMO.#: OMO-MR4A16BYS35R-EVERSPIN-TECHNOLOGIES

    NVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
    MR4A16BMA35

    Mfr.#: MR4A16BMA35

    OMO.#: OMO-MR4A16BMA35-EVERSPIN-TECHNOLOGIES

    IC RAM 16M PARALLEL 48FBGA
    MR4A16AVMA35

    Mfr.#: MR4A16AVMA35

    OMO.#: OMO-MR4A16AVMA35-1190

    全新原装
    可用性
    库存:
    Available
    订购:
    2500
    输入数量:
    MR4A16BMA35的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格(美元)
    数量
    单价
    小计金额
    1
    US$35.27
    US$35.27
    10
    US$33.50
    US$335.04
    100
    US$31.74
    US$3 174.03
    500
    US$29.98
    US$14 988.50
    1000
    US$28.21
    US$28 213.60
    由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
    从...开始
    最新产品
    • Nanonics Per MIL-DTL-32139 Dualobe
      TE Connectivity Aerospace, Defense, and Marine's Nanonics products are designed and qualified to MIL-DTL-32139 specifications.
    • THERMOFIT® DR-25 Tubing
      TE Connectivity's THERMOFIT DR-25 tubing offers a flexible, flame retardant, fluid- and abrasion-resistant solution.
    • INSTALITE ZH-150 Tubing
      TE Connectivity's INSTALITE ZH-150 heat-shrinkable tubing combines high-temperature and zero halogen properties in a lightweight material.
    • Compare MR4A16BMA35
      MR4A16BCMA35 vs MR4A16BCMA35R vs MR4A16BCYS35
    • Raychem S200 Shield Terminators
      TE Connectivity Aerospace, Defense and Marine's S200 shield terminators provide an environmentally protected shield for high temperature cable applications.
    • Multi-Position Backplane RF Modules
      The multi-position backplane RF module from TE has high level of performance to meet the demands of many different applications.
    Top