IRF630NSPBF

Mfr. #:: IRF630NSPBF
制造商:: Infineon Technologies
描述:: Darlington Transistors MOSFET 200V 1 N-CH HEXFET 300mOhms 23.3nC
生命周期:: 制造商新产品。
数据表:: IRF630NSPBF 数据表
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ECAD Model:

产品属性
属性值

制造商: 红外线

产品分类: FET - 单

打包: 管子

单位重量: 0.139332 oz

安装方式: 贴片/贴片

包装盒: TO-252-3

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 82 W

最高工作温度: + 175 C

最低工作温度: - 55 C

秋季时间: 15 ns

上升时间: 14 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 9.5 A

Vds-漏-源-击穿电压: 200 V

Rds-On-Drain-Source-Resistance: 300 mOhms

晶体管极性: N通道

典型关断延迟时间: 27 ns

典型开启延迟时间: 7.9 ns

Qg-门电荷: 23.3 nC

通道模式: 增强

Tags: IRF630NS, IRF630N, IRF630, IRF63, IRF6, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF630NSPBF 描述

***ineon SCT: 200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ow.cn: Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK Tube

***trelec: MOSFET Operating temperature: -55...+175 °C Housing type: D2PAK Polarity: N Power dissipation: 82 W

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:9.3A; On Resistance, Rds(on):300mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N, 200V, 9.5A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:200V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:82W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Alternate Case Style:D2-PAK; Avalanche Single Pulse Energy Eas:94mJ; Capacitance Ciss Typ:575pF; Current Iar:9.3A; Current Id Max:9.3A; Current Idss Max:25µA; Current Temperature:25°C; External Depth:15.49mm; External Length / Height:4.69mm; External Width:10.16mm; Fall Time tf:15ns; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:1.83°C/W; N-channel Gate Charge:35nC; No. of Transistors:1; On State resistance @ Vgs = 10V:300mohm; Package / Case:D2-PAK; Power Dissipation Pd:82W; Power Dissipation Pd:82W; Power Dissipation on 1 Sq. PCB:3.8W; Pulse Current Idm:37A; Rise Time:14ns

Market price

型号	制造商	描述	库存	价格
IRF630NSPBF DISTI # V36:1790_13890565	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK Tube	7	100:$1.2055 25:$1.3058 10:$1.4732 1:$1.6815
IRF630NSPBF DISTI # IRF630NSPBF-ND	Infineon Technologies AG	MOSFET N-CH 200V 9.3A D2PAK RoHS: Compliant Min Qty: 850 Container: Tube	Limited Supply - Call
IRF630NSPBF DISTI # C1S322000589278	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK Tube RoHS: Compliant	7	10:$1.5584
IRF630NSPBF DISTI # 38K2816	Infineon Technologies AG	MOSFET Transistor, N Channel, 9.3 A, 200 V, 300 mohm, 10 V, 4 V , RoHS Compliant: Yes	0
IRF630NSPBF DISTI # 942-IRF630NSPBF	Infineon Technologies AG	MOSFET 200V 1 N-CH HEXFET 300mOhms 23.3nC RoHS: Compliant	0
IRF630NSPBF	International Rectifier	Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	2539	1000:$0.6900 500:$0.7300 100:$0.7600 25:$0.7900 1:$0.8500
IRF630NSPBF	International Rectifier		29
IRF630NSPBF	International Rectifier	RoHS: Compliant	Europe - 47
IRF630NSTRLPBF DISTI # IRF630NSPBF-GURT	Infineon Technologies AG	N-Ch 200V 9,3A 82W 0,3R DPak RoHS: Compliant	360	10:€0.6660 50:€0.3960 200:€0.3060 500:€0.2950
IRF630NSPBF DISTI # 8648352	Infineon Technologies AG	MOSFET, N, 200V, 9.5A, D2-PAK RoHS: Compliant	2	1:$2.6200 10:$2.2400 100:$1.7800 500:$1.5700 1000:$1.3000 2500:$1.2800

图片	型号	描述
	Mfr.#: IRF630 OMO.#: OMO-IRF630	MOSFET N-Ch 200 Volt 10 Amp
	Mfr.#: IRF630STRL OMO.#: OMO-IRF630STRL-VISHAY	MOSFET N-CH 200V 9A D2PAK
	Mfr.#: IRF634BTSTU_FP001 OMO.#: OMO-IRF634BTSTU-FP001-1190	250V N-Channel BFET MOSFET
	Mfr.#: IRF634NL OMO.#: OMO-IRF634NL-1190	全新原装
	Mfr.#: IRF630,IRF630NPBF, OMO.#: OMO-IRF630-IRF630NPBF--1190	全新原装
	Mfr.#: IRF6305TRL OMO.#: OMO-IRF6305TRL-1190	全新原装
	Mfr.#: IRF630BTSTU_FP001 OMO.#: OMO-IRF630BTSTU-FP001-ON-SEMICONDUCTOR	MOSFET N-CH 200V 9A TO-220
	Mfr.#: IRF630ZFP/RDN100N20 OMO.#: OMO-IRF630ZFP-RDN100N20-1190	全新原装
	Mfr.#: IRF634A OMO.#: OMO-IRF634A-1190	全新原装
	Mfr.#: IRF634PBF,IRF634 OMO.#: OMO-IRF634PBF-IRF634-1190	全新原装

IRF630NSPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes