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IPB049N08N5ATMA1

IPB049N08N5ATMA1
Mfr. #:
IPB049N08N5ATMA1
制造商:
Infineon Technologies
描述:
MOSFET N-CH 80V TO263-3
生命周期:
制造商新产品。
数据表:
IPB049N08N5ATMA1 数据表
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IPB049N08N5ATMA1 更多信息
产品属性
属性值
制造商
英飞凌科技
产品分类
晶体管 - FET、MOSFET - 单
打包
卷轴
部分别名
IPB049N08N5 SP001227052
单位重量
0.139332 oz
安装方式
贴片/贴片
包装盒
TO-263-3
技术
硅
通道数
1 Channel
配置
单身的
晶体管型
1 N-Channel
钯功耗
125 W
最高工作温度
+ 175 C
最低工作温度
- 55 C
秋季时间
7 ns
上升时间
7 ns
VGS-栅极-源极-电压
+/- 20 V
Id 连续漏极电流
80 A
Vds-漏-源-击穿电压
80 V
VGS-th-Gate-Source-Threshold-Voltage
2.2 V
Rds-On-Drain-Source-Resistance
6.6 mOhms
晶体管极性
N通道
典型关断延迟时间
27 ns
典型开启延迟时间
17 ns
Qg-门电荷
42 nC
正向跨导最小值
52 S
通道模式
增强
Tags
IPB049N0, IPB049, IPB04, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 80V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***ark
Mosfet, N-Ch, 80V, 80A, To-263-3; Transistor Polarity:n Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.0043Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
型号 制造商 描述 库存 价格
IPB049N08N5ATMA1
DISTI # V72:2272_06383300		Infineon Technologies AGTrans MOSFET N-CH 80V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		334
  • 75000:$0.9624
  • 30000:$0.9724
  • 15000:$0.9824
  • 6000:$0.9924
  • 3000:$1.0026
  • 1000:$1.0128
  • 500:$1.1045
  • 250:$1.2104
  • 100:$1.2521
  • 50:$1.3485
  • 25:$1.4984
  • 10:$1.5510
  • 1:$1.7777
IPB049N08N5ATMA1
DISTI # IPB049N08N5ATMA1-ND		Infineon Technologies AGMOSFET N-CH 80V TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$1.2344
IPB049N08N5ATMA1
DISTI # 26195151		Infineon Technologies AGTrans MOSFET N-CH 80V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		334
  • 500:$1.1045
  • 250:$1.2104
  • 100:$1.2521
  • 50:$1.5149
  • 25:$1.5328
  • 10:$1.5511
  • 7:$1.7777
IPB049N08N5ATMA1
DISTI # IPB049N08N5ATMA1		Infineon Technologies AGMV POWER MOS - Tape and Reel (Alt: IPB049N08N5ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$1.1149
  • 2000:$1.0739
  • 4000:$1.0359
  • 6000:$1.0009
  • 10000:$0.9829
IPB049N08N5ATMA1
DISTI # SP001227052		Infineon Technologies AGMV POWER MOS (Alt: SP001227052)
RoHS: Compliant
Min Qty: 1000		Europe - 0
  • 1000:€1.2629
  • 2000:€1.0519
  • 4000:€0.9709
  • 6000:€0.9019
  • 10000:€0.8419
IPB049N08N5ATMA1
DISTI # 49AC0281		Infineon Technologies AGMOSFET, N-CH, 80V, 80A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0043ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes928
  • 1:$2.0900
  • 10:$1.7800
  • 25:$1.6600
  • 50:$1.5400
  • 100:$1.4200
  • 250:$1.3400
  • 500:$1.2500
IPB049N08N5ATMA1
DISTI # 726-IPB049N08N5ATMA1		Infineon Technologies AGMOSFET N-Ch 80V 80A D2PAK-2
RoHS: Compliant		537
  • 1:$2.0900
  • 10:$1.7800
  • 100:$1.4200
  • 500:$1.2500
  • 1000:$1.0300
IPB049N08N5ATMA1Infineon Technologies AGPower Field-Effect Transistor, 80A I(D), 80V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant		1000
  • 1000:$0.8800
  • 500:$0.9300
  • 100:$0.9700
  • 25:$1.0100
  • 1:$1.0900
IPB049N08N5ATMA1
DISTI # C1S322000625598		Infineon Technologies AGMOSFETs334
  • 100:$1.2521
  • 50:$1.5149
  • 25:$1.5328
  • 10:$1.5511
IPB049N08N5ATMA1
DISTI # 2839449		Infineon Technologies AGMOSFET, N-CH, 80V, 80A, TO-263-3
RoHS: Compliant		928
  • 5:$3.6500
  • 25:$3.1800
  • 100:$2.6000
  • 250:$2.1900
  • 500:$1.9000
  • 1000:$1.7900
  • 5000:$1.7000
IPB049N08N5ATMA1
DISTI # 2839449		Infineon Technologies AGMOSFET, N-CH, 80V, 80A, TO-263-3
RoHS: Compliant		928
  • 1:£2.2400
  • 10:£1.7000
  • 100:£1.3500
图片 型号 描述
IPB049N08N5ATMA1

Mfr.#: IPB049N08N5ATMA1

OMO.#: OMO-IPB049N08N5ATMA1

 MOSFET N-Ch 80V 80A D2PAK-2
IPB049N06L3

Mfr.#: IPB049N06L3

OMO.#: OMO-IPB049N06L3-1190

 全新原装
IPB049N06L3G

Mfr.#: IPB049N06L3G

OMO.#: OMO-IPB049N06L3G-1190

 Power Field-Effect Transistor, 80A I(D), 60V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IPB049N06L3GATMA1

Mfr.#: IPB049N06L3GATMA1

OMO.#: OMO-IPB049N06L3GATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 60V 80A TO263-3
IPB049N06L3 G

Mfr.#: IPB049N06L3 G

OMO.#: OMO-IPB049N06L3-G-126

 IGBT Transistors MOSFET N-Ch 60V 80A D2PAK-2
IPB049N08N5ATMA1

Mfr.#: IPB049N08N5ATMA1

OMO.#: OMO-IPB049N08N5ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 80V TO263-3
可用性
库存:
Available
订购:
2500
输入数量:
IPB049N08N5ATMA1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$1.47
US$1.47
10
US$1.40
US$14.01
100
US$1.33
US$132.69
500
US$1.25
US$626.60
1000
US$1.18
US$1 179.50
由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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