FGW15N120VD

FGW15N120VD
Mfr. #:
FGW15N120VD
制造商:
Fuji Electric Co Ltd
描述:
IGBT, SINGLE, 1.2KV, 28A, TO-247-3, DC Collector Current:28A, Collector Emitter Saturation Voltage Vce(on):1.85V, Power Dissipation Pd:155W, Collector Emitter Voltage V(br)ceo:1.2kV, No. of Pins:
生命周期:
制造商新产品。
数据表:
FGW15N120VD 数据表
交货:
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支付:
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ECAD Model:
产品属性
属性值
Tags
FGW15N1, FGW1, FGW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ment14 APAC
IGBT, SINGLE, 1.2KV, 28A, TO-247-3
***nell
IGBT, SINGLE, 1.2KV, 28A, TO-247-3; DC Collector Current: 28A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 155W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -
型号 制造商 描述 库存 价格
FGW15N120VD
DISTI # 49X9256
Fuji Electric Co LtdIGBT, SINGLE, 1.2KV, 28A, TO-247-3,DC Collector Current:28A,Collector Emitter Saturation Voltage Vce(on):1.85V,Power Dissipation Pd:155W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:175°CRoHS Compliant: Yes0
    FGW15N120VD
    DISTI # 7729048P
    Fuji Electric Co LtdIGBT 15A 1200V TRENCH-FS V SERIES TO247, TU9
    • 60:£4.5300
    • 30:£4.8200
    • 15:£5.1000
    • 5:£5.4000
    FGW15N120VD-S31PP-P2
    DISTI # FE0000000000864
    Fuji Electric Co LtdDISCRETE IGBT- Standard V
    RoHS: Compliant
    0 in Stock0 on Order
    • 600:$2.0000
    • 1:$2.1500
    图片 型号 描述
    FGW15N120H

    Mfr.#: FGW15N120H

    OMO.#: OMO-FGW15N120H-1190

    Power Field-Effect Transistor, 1A I(D),0.6ohm,2-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET
    FGW15N120HD

    Mfr.#: FGW15N120HD

    OMO.#: OMO-FGW15N120HD-1190

    IGBT, SINGLE, 1.2KV, 31A, TO-247-3, DC Collector Current:31A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:155W, Collector Emitter Voltage V(br)ceo:1.2kV, No. of Pins:3
    FGW15N120VD

    Mfr.#: FGW15N120VD

    OMO.#: OMO-FGW15N120VD-1190

    IGBT, SINGLE, 1.2KV, 28A, TO-247-3, DC Collector Current:28A, Collector Emitter Saturation Voltage Vce(on):1.85V, Power Dissipation Pd:155W, Collector Emitter Voltage V(br)ceo:1.2kV, No. of Pins:
    FGW15N40

    Mfr.#: FGW15N40

    OMO.#: OMO-FGW15N40-1190

    全新原装
    FGW15N40A

    Mfr.#: FGW15N40A

    OMO.#: OMO-FGW15N40A-1190

    全新原装
    可用性
    库存:
    Available
    订购:
    3000
    输入数量:
    FGW15N120VD的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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    10
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    100
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    500
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    1000
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    由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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