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CSD25303W1015

CSD25303W1015
Mfr. #:
CSD25303W1015
描述:
MOSFET PCh NexFET Pwr MOSFET
生命周期:
制造商新产品。
数据表:
CSD25303W1015 数据表
交货:
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ECAD Model:
更多信息:
CSD25303W1015 更多信息 CSD25303W1015 Product Details
产品属性
属性值
制造商：
德州仪器
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
DSBGA-6
通道数：
1 Channel
晶体管极性：
P-通道
Vds - 漏源击穿电压：
20 V
Id - 连续漏极电流：
3 A
Rds On - 漏源电阻：
56 mOhms
Vgs - 栅源电压：
8 V
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
1.5 W
配置：
单身的
商品名：
场效应管
打包：
卷轴
高度：
0.625 mm
长度：
1.5 mm
系列：
CSD25303W1015
晶体管类型：
1 P-Channel
宽度：
1 mm
品牌：
德州仪器
产品类别：
MOSFET
出厂包装数量：
3000
子类别：
MOSFET
单位重量：
0.000060 oz
Tags
CSD2530, CSD253, CSD25, CSD2, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
P-Channel NexFET Power MOSFET 6-DSBGA -55 to 150
***ical
Trans MOSFET P-CH 20V 3A 6-Pin DSBGA T/R
***et
Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
Obsolete, LTB expires Nov-01-2014
***ure Electronics
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***ical
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***ark
Mosfet, N-Ch, 20V, 4A, Sot-26 Rohs Compliant: Yes
***des Inc SCT
N-Channel Mosfet, 20V VDS, 8±V VGS
***emi
PowerTrench® MOSFET, Dual P-Channel, -20V , -3.7A, 72mΩ
***et Europe
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***ure Electronics
FDMA1023PZ Series -20 V -3.7 A 72 mOhm Dual P-Ch. PowerTrench® MOSFET-MicroFET-6
***r Electronics
Small Signal Field-Effect Transistor, 3.7A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229VCCC
***nell
MOSFET, DUAL P CH, -20V, -3.7A, MICROFET; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-3.7A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.06ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-700mV; Power Dissipation Pd:1.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:µFET; No. of Pins:6; MSL:-; SVHC:No SVHC (20-Jun-2013)
***rchild Semiconductor
This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
***emi
Power MOSFET 20V 3.2A 100 mOhm Dual Complementary WDFN6 with ESD
***r Electronics
Small Signal Field-Effect Transistor, 2.6A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Package/Case:6-WDFN; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C; Power Dissipation, Pd:1.5W ;RoHS Compliant: Yes
***emi
Power MOSFET 20V 3.2A 100 mOhm Dual Complementary WDFN6 with ESD
***r Electronics
Small Signal Field-Effect Transistor, 2.6A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Package/Case:6-WDFN; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C; Power Dissipation, Pd:1.5W ;RoHS Compliant: Yes
*** Source Electronics
Trans MOSFET P-CH 20V 3.1A 3-Pin SOT-23 T/R / MOSFET P-CH 20V 3.1A SOT23-3
***enic
20V 3.1A 1.6W 112m´Î@4.5V2.8A 1V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS
***roFlash
Small Signal Field-Effect Transistor, 3.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***nell
MOSFET, P CH, -20V, -3.1A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.1A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.11ohm; Rds(on) Test Voltage Vgs:-2.5V; Power Dissipation Pd:1.6W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:-
***peria
PMDPB65UP - 20 V, 3.5 A dual P-channel Trench MOSFET
***et
Trans MOSFET Array Dual P-CH 20V 3.5A 6-Pin HUSON EP T/R
*** Americas
=""=""=""SOT1118/ STANDARD MARKING * REEL PACK, SMD, 7""""""""
***S
French Electronic Distributor since 1988
***ark
DUAL P CH MOSFET, TRENCH, 320V, -3.5A, SOT-1118; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.5A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.058ohm; Rds(on) Test Voltage Vgs:-4.5V ;RoHS Compliant: Yes
型号 描述 库存 价格
CSD25303W1015
DISTI # 296-28317-2-ND		MOSFET P-CH 20V 3A 6DSBGA
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    CSD25303W1015
    DISTI # 296-28317-1-ND    		MOSFET P-CH 20V 3A 6DSBGA
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      CSD25303W1015
      DISTI # 296-28317-6-ND      		MOSFET P-CH 20V 3A 6DSBGA
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        CSD25303W1015
        DISTI # CSD25303W1015        		Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET (Alt: CSD25303W1015)
        RoHS: Not Compliant
        Min Qty: 1000        		Americas - 0
        • 1000:$0.3619
        • 1002:$0.3449
        • 2002:$0.3329
        • 5000:$0.3219
        • 10000:$0.3129
        CSD25303W1015Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
        RoHS: Compliant        		4390
        • 1000:$0.3300
        • 500:$0.3500
        • 100:$0.3600
        • 25:$0.3800
        • 1:$0.4100
        CSD25303W1015
        DISTI # 595-CSD25303W1015        		MOSFET PCh NexFET Pwr MOSFET
        RoHS: Compliant        		0
          图片 型号 描述
          CSD25310Q2T

          Mfr.#: CSD25310Q2T

          OMO.#: OMO-CSD25310Q2T

          		 MOSFET -20V, P ch NexFET MOSFETG , single SON 2x2, 23.9mOhm 6-WSON -55 to 150
          CSD25310Q2

          Mfr.#: CSD25310Q2

          OMO.#: OMO-CSD25310Q2

          		 MOSFET 20-V P-CH NexFET Pwr MOSFET
          CSD25304W1015T

          Mfr.#: CSD25304W1015T

          OMO.#: OMO-CSD25304W1015T

          		 MOSFET 20V P-Ch NexFET
          CSD25301W1015

          Mfr.#: CSD25301W1015

          OMO.#: OMO-CSD25301W1015

          		 MOSFET P-Ch NexFET Power MOSFETs
          CSD25302Q2

          Mfr.#: CSD25302Q2

          OMO.#: OMO-CSD25302Q2

          		 MOSFET PCh NexFET Pwr MOSFET
          CSD25303W1015

          Mfr.#: CSD25303W1015

          OMO.#: OMO-CSD25303W1015

          		 MOSFET PCh NexFET Pwr MOSFET
          CSD25302Q2

          Mfr.#: CSD25302Q2

          OMO.#: OMO-CSD25302Q2-TEXAS-INSTRUMENTS

          		 MOSFET P-CH 20V 5A 6SON
          CSD25304W1015T

          Mfr.#: CSD25304W1015T

          OMO.#: OMO-CSD25304W1015T-TEXAS-INSTRUMENTS

          		 MOSFET P-CH 20V 3A 6DSBGA
          CSD25310Q2T

          Mfr.#: CSD25310Q2T

          OMO.#: OMO-CSD25310Q2T-TEXAS-INSTRUMENTS

          		 20-V P-CHANNEL NEXFET POWER MOSF
          CSD25310Q2

          Mfr.#: CSD25310Q2

          OMO.#: OMO-CSD25310Q2-TEXAS-INSTRUMENTS

          		 Trans MOSFET P-CH 20V 20A 6-Pin WSON EP T/R
          可用性
          库存:
          Available
          订购:
          4500
          输入数量:
          CSD25303W1015的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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