AS4C8M16D1A-5TANTR

Mfr. #:: AS4C8M16D1A-5TANTR
制造商:: Alliance Memory
描述:: DRAM 128M, 2.5V, 200Mhz 8M x 16 DDR1
生命周期:: 制造商新产品。
数据表:: AS4C8M16D1A-5TANTR 数据表
交货:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:: AS4C8M16D1A-5TANTR 更多信息

产品属性
属性值

制造商：: 联盟记忆

产品分类：: 动态随机存取存储器

RoHS：: Y

类型：: SDRAM - DDR1

系列：: AS4C8M16D1A

打包：: 卷轴

品牌：: 联盟记忆

湿气敏感：: 是的

产品类别：: 动态随机存取存储器

出厂包装数量：: 1000

子类别：: 内存和数据存储

Tags: AS4C8M16D1A-5T, AS4C8M16D1A, AS4C8M16D, AS4C8M1, AS4C8, AS4C, AS4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

AS4C8M16D1A-5TANTR 更多信息

DDR1 Synchronous DRAM: Alliance Memory DDR1 Synchronous DRAM is a high-speed CMOS double data rate synchronous DRAM. It is internally configured with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edges of CK and CK. Read and write accesses to the SDRAM are burst oriented. The Accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.

Market price

型号	制造商	描述	库存	价格
AS4C8M16D1A-5TAN DISTI # 913-AS4C8M16D1A-5TAN	Alliance Memory Inc	DRAM 128M, 2.5V, 200Mhz 8M x 16 DDR1 RoHS: Compliant	108	1:$4.1400 10:$3.7600 25:$3.6700 50:$3.6500 100:$3.2800 250:$3.2600 500:$3.1400 1000:$2.8500 2000:$2.7200
AS4C8M16D1A-5TANTR	Alliance Memory Inc	DRAM 128M2.5V200Mhz 8M x 16 DDR1	1000

相关产品

图片	型号	描述
	Mfr.#: AS4C8M16D1A-5TINTR OMO.#: OMO-AS4C8M16D1A-5TINTR	DRAM
	Mfr.#: AS4C8M16D1A-5TCNTR OMO.#: OMO-AS4C8M16D1A-5TCNTR	DRAM
	Mfr.#: AS4C8M16D1A-5TANTR OMO.#: OMO-AS4C8M16D1A-5TANTR	DRAM 128M, 2.5V, 200Mhz 8M x 16 DDR1
	Mfr.#: AS4C8M16D1-5BCNTR OMO.#: OMO-AS4C8M16D1-5BCNTR	DRAM 128M, 2.5V, 200Mhz 8M x 16 DDR1
	Mfr.#: AS4C8M16D1-5TCN OMO.#: OMO-AS4C8M16D1-5TCN	DRAM 128Mb, 3.3V, 200Mhz 8M x 16 DDR
	Mfr.#: AS4C8M16D1A-5TANTR OMO.#: OMO-AS4C8M16D1A-5TANTR-230	DRAM 128M 2.5V 200Mhz 8M x 16 DDR1
	Mfr.#: AS4C8M16D1A-5TIN OMO.#: OMO-AS4C8M16D1A-5TIN-ALLIANCE-MEMORY	IC DRAM 128M PARALLEL 66TSOP II
	Mfr.#: AS4C8M16D1-5BIN OMO.#: OMO-AS4C8M16D1-5BIN-ALLIANCE-MEMORY	IC DRAM 128M PARALLEL 60TFBGA
	Mfr.#: AS4C8M16D1A-5TCNTR OMO.#: OMO-AS4C8M16D1A-5TCNTR-ALLIANCE-MEMORY	IC DRAM 128M PARALLEL 66TSOP II
	Mfr.#: AS4C8M16D1-5BCN OMO.#: OMO-AS4C8M16D1-5BCN-ALLIANCE-MEMORY	DRAM 128M, 2.5V, 200Mhz 8M x 16 DDR1