QPD0050TR7

Mfr. #:: QPD0050TR7
制造商:: Qorvo
描述:: RF JFET Transistors DC-3.6GHz GaN 75W 48V
生命周期:: 制造商新产品。
数据表:: QPD0050TR7 数据表
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ECAD Model:
更多信息:: QPD0050TR7 更多信息

产品属性
属性值

制造商：: 科沃

产品分类：: 射频 JFET 晶体管

RoHS：: Y

技术：: 氮化镓

获得：: 19.4 dB

输出功率：: 75 W

最低工作温度：: - 40 C

安装方式：: 贴片/贴片

包装/案例：: DFN-6

打包：: 卷轴

应用：: 微蜂窝基站，W-CDMA / LTE

配置：: 单身的

工作频率：: DC to 3.6 GHz

系列：: QPD

品牌：: 科沃

湿气敏感：: 是的

产品类别：: 射频 JFET 晶体管

出厂包装数量：: 250

子类别：: 晶体管

第 # 部分别名：: 1132691

Tags: QPD005, QPD0, QPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

QPD0050TR7 更多信息

QPD GaN RF Transistors: Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

GaN Transistor Solutions for Sub 6GHz 5G: Qorvo GaN Transistor Solutions for Sub 6GHz 5G are a broad portfolio of gallium nitride (GaN) discrete transistor products. The devices have varying levels of power, voltage, and frequency ratings in die-level and packaged solutions. These products provide high GaN performance plus the convenience of industry-standard packaging. This speeds design, manufacturing, and is backed by industry-leading reliability.

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