BSZ0902NSATMA1

Mfr. #:: BSZ0902NSATMA1
制造商:: Infineon Technologies
描述:: MOSFET LV POWER MOS
生命周期:: 制造商新产品。
数据表:: BSZ0902NSATMA1 数据表
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产品属性
属性值

制造商：: 英飞凌

产品分类：: MOSFET

技术：: 硅

安装方式：: 贴片/贴片

包装/案例：: TSDSON-8

商品名：: 优化MOS

打包：: 卷轴

高度：: 1.1 mm

长度：: 3.3 mm

宽度：: 3.3 mm

品牌：: 英飞凌科技

产品类别：: MOSFET

子类别：: MOSFET

第 # 部分别名：: BSZ0902NS BSZ92NSXT SP000854386

Tags: BSZ0902, BSZ090, BSZ09, BSZ0, BSZ

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSZ0902NSATMA1 描述

***ure Electronics: Single N-Channel 30 V 2.6 mOhm 26 nC OptiMOS Power Mosfet - TSDSON-8

***ment14 APAC: MOSFET, N-CH, 30V, 40A, TSDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Source Voltage Vds:30V; On Resistance

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TSDSON-8, RoHS

***nell: MOSFET, N-CH, 30V, 40A, TSDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0022ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 48W; Transistor Case Style: TSDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***ure Electronics: Single N-Channel 30 V 3.5 mOhm 56 nC OptiMOS Power Mosfet - TSDSON-8

***et: Transistor MOSFET N-CH 30V 40A 8-Pin PG-TSDSON T/R

***ment14 APAC: MOSFET, N CH, 40A, 30V, PG-TSDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.9mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:40A; Power Dissipation Pd:69W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TSDSON-8, RoHS

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***ure Electronics: N-Channle 30 V 22 A 10 mohm Surface Mount PowerTrench Mosfet - Power 56

***emi: N-Channel PowerTrench® MOSFET 30V, 22A, 10mΩ

*** Stop Electro: Power Field-Effect Transistor, 13.5A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***nell: MOSFET, N CH, 30V, 22A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0081ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:29W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

***emi: N-Channel PowerTrench® MOSFET 30V, 12A, 11.5mΩ

*** Source Electronics: MOSFET N-CH 30V 20A POWER33 / Trans MOSFET N-CH Si 30V 12A 8-Pin WDFN EP T/R

***nell: MOSFET, N CH, 30V, 20A, MLP 3.3X3.3; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:25W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance.This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

*** Source Electronics: Trans MOSFET N-CH Si 30V 13.2A 8-Pin PQFN EP T/R / MOSFET N-CH 30V POWER56

***emi: N-Channel PowerTrench® MOSFET 30V, 9.5mΩ

***ure Electronics: Single N-Channel 30 V 14.5 mOhm 10 nC 2.5 W PowerTrench SMT Mosfet - POWER 56-8

***r Electronics: Power Field-Effect Transistor, 13.2A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed ang body diode reverse recovery performance.

***nell: MOSFET, N CH, 30V, 20A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0076ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:27W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***ure Electronics: Single N-Channel 30 V 5.2 mOhm 12 nC OptiMOS Power Mosfet - TDSON-8

***ical: Trans MOSFET N-CH 30V 17A Automotive 8-Pin TDSON EP T/R

***ment14 APAC: MOSFET, N CH, 30V, 57A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:57A; Source Voltage Vds:30V; On Resistance

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS

***nell: MOSFET, N CH, 30V, 57A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 57A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0043ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 28W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (27-Jun-2018)

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 57 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 5.2 / Gate-Source Voltage V = 20 / Fall Time ns = 2.4 / Rise Time ns = 3.6 / Turn-OFF Delay Time ns = 13 / Turn-ON Delay Time ns = 2.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TDSON-8 FL / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 28

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

*** Electronics: INFINEON IRFHS8342TRPBF MOSFET Transistor, N Channel, 8.8 A, 30 V, 0.013 ohm, 10 V, 1.8 VNew

***roFlash: Single N-Channel 30 V 16 mOhm 4.2 nC HEXFET¬Æ Power Mosfet - PQFN 2 x 2 mm

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 2mm X 2mm PQFN package, PG-TSDSON-6, RoHS

***et: Trans MOSFET N-CH 30V 8.8A 6-Pin PQFN EP T/R

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: PQFN-6 (2x2) Polarity: N Variants: Enhancement mode Power dissipation: 2.1 W

***ment14 APAC: N CH MOSFET, 30V, 8.8A, 6-PQFN; Transist; N CH MOSFET, 30V, 8.8A, 6-PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:8.8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):13mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; No. of Pins:6

***ineon: Benefits: RoHS Compliant; Low RDS(on); Low Profile (less than 1.0 mm); Compatible with Existing Surface Mount Techniques; Low Junction to PCB Thermal Resistance; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; DC Switches; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET

Market price

型号	制造商	描述	库存	价格
BSZ0902NSATMA1 DISTI # V36:1790_06384423	Infineon Technologies AG	Trans MOSFET N-CH 30V 19A 8-Pin TSDSON EP T/R RoHS: Compliant	5000	5000:$0.3662
BSZ0902NSATMA1 DISTI # V72:2272_06384423	Infineon Technologies AG	Trans MOSFET N-CH 30V 19A 8-Pin TSDSON EP T/R RoHS: Compliant	1891	1000:$0.3988 500:$0.4912 250:$0.5080 100:$0.5933 25:$0.7749 10:$0.8653 1:$1.0176
BSZ0902NSATMA1 DISTI # BSZ0902NSATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 30V 40A TSDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	11503In Stock	1000:$0.4259 500:$0.5394 100:$0.6530 10:$0.8380 1:$0.9400
BSZ0902NSATMA1 DISTI # BSZ0902NSATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 40A TSDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	11503In Stock	1000:$0.4259 500:$0.5394 100:$0.6530 10:$0.8380 1:$0.9400
BSZ0902NSATMA1 DISTI # BSZ0902NSATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 30V 40A TSDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	10000In Stock	25000:$0.3491 10000:$0.3528 5000:$0.3666
BSZ0902NSATMA1 DISTI # 31652879	Infineon Technologies AG	Trans MOSFET N-CH 30V 19A 8-Pin TSDSON EP T/R RoHS: Compliant	5000	5000:$0.3662
BSZ0902NSATMA1 DISTI # 33145311	Infineon Technologies AG	Trans MOSFET N-CH 30V 19A 8-Pin TSDSON EP T/R RoHS: Compliant	5000	5000:$0.2682
BSZ0902NSATMA1 DISTI # 32315857	Infineon Technologies AG	Trans MOSFET N-CH 30V 19A 8-Pin TSDSON EP T/R RoHS: Compliant	5000	5000:$0.4844
BSZ0902NSATMA1 DISTI # 32435635	Infineon Technologies AG	Trans MOSFET N-CH 30V 19A 8-Pin TSDSON EP T/R RoHS: Compliant	1891	22:$1.0178
BSZ0902NSATMA1 DISTI # SP000854386	Infineon Technologies AG	Trans MOSFET N-CH 30V 25A 8-Pin TSDSON EP T/R (Alt: SP000854386) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 0	50000:€0.2549 30000:€0.2739 20000:€0.2969 10000:€0.3239 5000:€0.3959
BSZ0902NSXT DISTI # BSZ0902NSATMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 19A 8-Pin TSDSON EP T/R - Tape and Reel (Alt: BSZ0902NSATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	50000:$0.2659 30000:$0.2709 20000:$0.2809 10000:$0.2909 5000:$0.3019
BSZ0902NSATMA1 DISTI # 50Y1834	Infineon Technologies AG	MOSFET Transistor, N Channel, 40 A, 30 V, 0.0022 ohm, 10 V, 2 V RoHS Compliant: Yes	2035	1000:$0.3980 500:$0.5040 250:$0.5370 100:$0.5710 50:$0.6280 25:$0.6850 10:$0.7420 1:$0.8690
BSZ0902NS DISTI # 726-BSZ0902NS	Infineon Technologies AG	MOSFET N-Ch 30V 40A TDSON-8 OptiMOS RoHS: Compliant	7240	1:$0.8600 10:$0.7350 100:$0.5650 500:$0.4990 1000:$0.3940 5000:$0.3500 10000:$0.3370
BSZ0902NSATMA1	Infineon Technologies AG	Single N-Channel 30 V 2.6 mOhm 26 nC OptiMOS Power Mosfet - TSDSON-8 RoHS: Not Compliant	5000Reel	5000:$0.3450
BSZ0902NSATMA1 DISTI # 8259159P	Infineon Technologies AG	MOSFET N-CH 19A 30V OPTIMOS TSDSON8EP, RL	3420	200:£0.4750
BSZ0902NSATMA1 DISTI # 2480786	Infineon Technologies AG	MOSFET, N-CH, 30V, 40A, TSDSON-8 RoHS: Compliant	2035	1000:$0.6060 500:$0.7680 100:$0.8690 10:$1.1400 1:$1.3300
BSZ0902NSATMA1 DISTI # 2480786RL	Infineon Technologies AG	MOSFET, N-CH, 30V, 40A, TSDSON-8 RoHS: Compliant	0	1000:$0.6060 500:$0.7680 100:$0.8690 10:$1.1400 1:$1.3300
BSZ0902NSATMA1 DISTI # XSKDRSA00000050		N-CH MOSFET 30V 40A PG-TSDSON8 RoHS: Compliant	5000 in Stock0 on Order	1000:$0.3232
BSZ0902NSATMA1 DISTI # XSFP00000147577	Infineon Technologies AG	Power Field-Effect Transistor, 131A I(D),55V,0.0053ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	10000 in Stock0 on Order	10000:$0.4600 5000:$0.4929
BSZ0902NSATMA1 DISTI # 2480786	Infineon Technologies AG	MOSFET, N-CH, 30V, 40A, TSDSON-8	2510	500:£0.4060 250:£0.4650 100:£0.5230 25:£0.6620 5:£0.7780

图片	型号	描述
	Mfr.#: BSZ0902NSI OMO.#: OMO-BSZ0902NSI	MOSFET N-Ch 30V 40A TDSON-8 OptiMOS
	Mfr.#: BSZ0902NS OMO.#: OMO-BSZ0902NS	MOSFET N-Ch 30V 40A TDSON-8 OptiMOS
	Mfr.#: BSZ0902NSIATMA1 OMO.#: OMO-BSZ0902NSIATMA1	MOSFET N-Ch 30V 40A TDSON-8 OptiMOS
	Mfr.#: BSZ0902NSATMA1 OMO.#: OMO-BSZ0902NSATMA1	MOSFET LV POWER MOS
	Mfr.#: BSZ0902NS OMO.#: OMO-BSZ0902NS-1190	Trans MOSFET N-CH 30V 25A 8-Pin TSDSON EP T/R (Alt: BSZ0902NS)
	Mfr.#: BSZ0902NSATMA1 OMO.#: OMO-BSZ0902NSATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 40A TSDSON-8
	Mfr.#: BSZ0902NSIATMA1 OMO.#: OMO-BSZ0902NSIATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 21A TSDSON-8
	Mfr.#: BSZ0902NSI OMO.#: OMO-BSZ0902NSI-317	RF Bipolar Transistors MOSFET N-Ch 30V 40A TDSON-8 OptiMOS

BSZ0902NSATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes