GTVA107001EC-V1-R0

GTVA107001EC-V1-R0
Mfr. #:
GTVA107001EC-V1-R0
制造商:
N/A
描述:
RF JFET Transistors GaN HEMT 50V 0.9-1.2GHz 700W
生命周期:
制造商新产品。
数据表:
GTVA107001EC-V1-R0 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
GTVA107001EC-V1-R0 更多信息
产品属性
属性值
制造商:
克里公司
产品分类:
射频 JFET 晶体管
RoHS:
Y
晶体管类型:
HEMT
技术:
氮化镓碳化硅
获得:
18 dB
晶体管极性:
N通道
Vds - 漏源击穿电压:
150 V
Vgs - 栅源击穿电压:
- 10 V to 2 V
Id - 连续漏极电流:
10 A
输出功率:
890 W
最大漏栅电压:
-
安装方式:
螺丝安装
包装/案例:
H-36248-2
打包:
卷轴
工作频率:
960 MHz to 1.215 GHz
品牌:
Wolfspeed / 克里
产品类别:
射频 JFET 晶体管
出厂包装数量:
50
子类别:
晶体管
Vgs th - 栅源阈值电压:
- 3 V
Tags
GTVA10, GTVA1, GTVA, GTV
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
GTVA High Power RF GaN on SiC HEMT
Wolfspeed / Cree GTVA High Power RF GaN on SiC HEMT are 50V High Electron Mobility Transistors (HEMT) based on Gallium-Nitride on Silicon Carbide technology. GaN on SiC devices offer high power density coupled with a high breakdown voltage, enabling highly efficient power amplifiers. The GTVA High Power RF GaN on SiC HEMT feature input matching, high efficiency, and thermally-enhanced packages. These Pulsed/CW (Continuous Wave) devices have a pulse width of 128µs and a duty cycle of 10%.
图片 型号 描述
GTVA107001EC-V1-R0

Mfr.#: GTVA107001EC-V1-R0

OMO.#: OMO-GTVA107001EC-V1-R0

RF JFET Transistors GaN HEMT 50V 0.9-1.2GHz 700W
GTVA107001EC-V1-R250

Mfr.#: GTVA107001EC-V1-R250

OMO.#: OMO-GTVA107001EC-V1-R250

RF JFET Transistors GaN HEMT 50V 0.9-1.2GHz 700W
可用性
库存:
49
订购:
2032
输入数量:
GTVA107001EC-V1-R0的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$829.35
US$829.35
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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