SIB411DK-T1-GE3

SIB411DK-T1-GE3
Mfr. #:
SIB411DK-T1-GE3
制造商:
Vishay
描述:
IGBT Transistors MOSFET 20V 9.0A 13W
生命周期:
制造商新产品。
数据表:
SIB411DK-T1-GE3 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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HTML Datasheet:
SIB411DK-T1-GE3 DatasheetSIB411DK-T1-GE3 Datasheet (P4-P6)SIB411DK-T1-GE3 Datasheet (P7)
ECAD Model:
产品属性
属性值
Tags
SIB41, SIB4, SIB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET P-CH 20V 4.8A 6-Pin PowerPAK SC-75 T/R
***ark
P CHANNEL MOSFET, -20V, 9A, SC-75, FULL REEL
***i-Key
MOSFET P-CH 20V 9A PPAK SC75-6L
***nell
MOSFET, P, PPAK SC-75; Transistor Polarity:P Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.055ohm; Rds(on) Test Voltage Vgs:8V; Threshold Voltage Vgs:-1V; Power Dissipation Pd:2.4W; Transistor Case Style:SC-75; No. of Pins:6Pins; Operating Temperature Max:150°C; MSL:MSL 1 - Unlimited; Current Id Max:-9A; Junction Temperature Tj Max:150°C; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Rise Time:40ns; Termination Type:Surface Mount Device; Voltage Vds Typ:20V; Voltage Vgs Max:-1V; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:1V; Voltage Vgs th Min:0.4V
型号 制造商 描述 库存 价格
SIB411DK-T1-GE3
DISTI # SIB411DK-T1-GE3-ND
Vishay SiliconixMOSFET P-CH 20V 9A PPAK SC75-6L
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    SIB411DK-T1-GE3
    DISTI # 781-SIB411DK-GE3
    Vishay IntertechnologiesMOSFET 20V 9.0A 13W
    RoHS: Compliant
    0
      SIB411DK-T1-GE3Vishay Intertechnologies 2820
        图片 型号 描述
        SIB411DK-T1-E3

        Mfr.#: SIB411DK-T1-E3

        OMO.#: OMO-SIB411DK-T1-E3

        MOSFET RECOMMENDED ALT 78-SIB441EDK-T1-GE3
        SIB411DK-T1-GE3

        Mfr.#: SIB411DK-T1-GE3

        OMO.#: OMO-SIB411DK-T1-GE3-VISHAY

        IGBT Transistors MOSFET 20V 9.0A 13W
        SIB411DK-T1-E3

        Mfr.#: SIB411DK-T1-E3

        OMO.#: OMO-SIB411DK-T1-E3-VISHAY

        MOSFET P-CH 20V 9A SC75-6
        可用性
        库存:
        Available
        订购:
        3000
        输入数量:
        SIB411DK-T1-GE3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
        参考价格(美元)
        数量
        单价
        小计金额
        1
        US$0.00
        US$0.00
        10
        US$0.00
        US$0.00
        100
        US$0.00
        US$0.00
        500
        US$0.00
        US$0.00
        1000
        US$0.00
        US$0.00
        由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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