APTCV50H60T3G

APTCV50H60T3G
Mfr. #:
APTCV50H60T3G
制造商:
Microchip / Microsemi
描述:
IGBT Modules DOR CC3133
生命周期:
制造商新产品。
数据表:
APTCV50H60T3G 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APTCV50H60T3G DatasheetAPTCV50H60T3G Datasheet (P4-P6)APTCV50H60T3G Datasheet (P7-P9)APTCV50H60T3G Datasheet (P10-P11)
ECAD Model:
产品属性
属性值
制造商:
微芯片
产品分类:
IGBT 模块
RoHS:
Y
产品:
IGBT 硅模块
配置:
全桥
集电极-发射极电压 VCEO 最大值:
600 V
集电极-发射极饱和电压:
1.5 V
25 C 时的连续集电极电流:
80 A
栅极-发射极漏电流:
600 nA
Pd - 功耗:
176 W
包装/案例:
SP3-32
最低工作温度:
- 40 C
最高工作温度:
+ 100 C
打包:
管子
品牌:
微芯片/Microsemi
安装方式:
底盘安装
最大栅极发射极电压:
20 V
产品类别:
IGBT 模块
出厂包装数量:
1
子类别:
IGBT
Tags
APTCV, APTC, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel
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FULL - BRIDGE NPT AND TRENCH + FIELD STOP IGBT POWER MODULE
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PM-MOSFET-COOLMOS-SP3 SP3F Tube RoHS Compliant: Yes
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Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel
***rochip SCT
High Voltage Power Module, Three Phase bridge, 600V, RoHS
***ark
PM-IGBT-TFS-SP3F SP3F Tube RoHS Compliant: Yes
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***el Electronic
Trans IGBT Module N-CH 600V 80A 10-Pin Case SP-1
***rochip SCT
High Voltage Power Module, Asymmetrical bridge, 600V, RoHS
***ark
PM-IGBT-TFS-SP1 SP1 Tube RoHS Compliant: Yes
*** Stop Electro
Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel
***et
Trans IGBT Module N-CH 600V 80A 12-Pin Case SP1
***rochip SCT
High Voltage Power Module, Three level inverter, 600V, RoHS
***ark
PM-IGBT-TFS-SP1 SP1 Tube RoHS Compliant: Yes
***i-Key
POWER MODULE IGBT 600V 50A SP1
***et Europe
EasyPACK 1B 600V sixpack IGBT module with Trench/Fieldstop IGBT3
***ment14 APAC
IGBT, LOW POWER, 600V, 50A, EASYPACK; Module Configuration:Six; Transistor Polarity:N Channel; DC Collector Current:50A; Collector Emitter Voltage Vces:1.45V; Power Dissipation Pd:205W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:18; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:205W
***ineon
EasyPACK 1B 600V sixpack IGBT module with Trench/Fieldstop IGBT3, Emitter Controlled 3 diode and NTC. | Summary of Features: Low Switching Losses; Trench IGBT 3; V(CEsat) with positive Temperature Coefficient; Low V(CEsat); Al(2)O(3) Substrate with Low Thermal Restistance; Compact Design; Solder Contact Technology; Rugged mounting due to integrated mounting clamps | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; solar; ups; majorhomeapplicances
***et
Trans IGBT Module N-CH 600V 100A 7-Pin EPM Rail
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IGBT MODULE 600V 100A 400W EPM7
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ark
Igbt Array & Module Transistor, N Channel, 75 A, 2.8 V, 310 W, 600 V, 7Pm-Ga
***Yang
IGBT Module Half Bridge 600V 75A 310W Chassis Mount 7PM-GA - Bulk
***inecomponents.com
600V, 75A IGBT Module (Molding Type)
*** Electronic Components
Motor / Motion / Ignition Controllers & Drivers 600V/75A
***el Electronic
IGBT MODULE 600V 75A 310W 7PMGA
***DA Technology Co., Ltd.
Product Description Demo for Development.
***nell
IGBT MODULE, 600V, 75A; Transistor Type:IGBT Module; Transistor Polarity:NPN; Voltage, Vces:600V; Current Ic Continuous a Max:75A; Voltage, Vce Sat Max:2.8V; Power Dissipation:310W; Case Style:7PM-GA; Termination Type:Screw; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:150A; External Depth:93mm; Fixing Centres:80mm; Fixing Hole Diameter:5.4mm; Pin Configuration:C2E1, E2, C1, G2, E2, E1, G1; Power, Pd:310W; Time, Rise:40ns; Transistors, No. of:2
图片 型号 描述
APTCV50H60T3G

Mfr.#: APTCV50H60T3G

OMO.#: OMO-APTCV50H60T3G

IGBT Modules DOR CC3133
可用性
库存:
Available
订购:
5500
输入数量:
APTCV50H60T3G的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
100
US$71.73
US$7 173.00
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