IXTQ88N30P

Mfr. #:: IXTQ88N30P
制造商:: Littelfuse
描述:: Darlington Transistors MOSFET 88 Amps 300V 0.04 Rds
生命周期:: 制造商新产品。
数据表:: IXTQ88N30P 数据表
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ECAD Model:

产品属性
属性值

制造商: IXYS

产品分类: FET - 单

系列: IXTQ88N30

打包: 管子

单位重量: 0.194007 oz

安装方式: 通孔

包装盒: TO-3P-3

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 600 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 25 ns

上升时间: 24 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 88 A

Vds-漏-源-击穿电压: 300 V

Rds-On-Drain-Source-Resistance: 40 mOhms

晶体管极性: N通道

典型关断延迟时间: 96 ns

典型开启延迟时间: 25 ns

通道模式: 增强

Tags: IXTQ88, IXTQ8, IXTQ, IXT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IXTQ88N30P 描述

***ical: Trans MOSFET N-CH 300V 88A 3-Pin(3+Tab) TO-3P

***i-Key: MOSFET N-CH 300V 88A TO-3P

***ark: Mosfet, N, To-3P; Transistor Polarity:n Channel; Continuous Drain Current Id:88A; Drain Source Voltage Vds:300V; On Resistance Rds(On):0.04Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:600W; Msl:- Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:88A; Drain Source Voltage Vds:300V; On Resistance Rds(on):0.04ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:600W; Transistor Case Style:TO-3P; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:6300pF; Current Id Max:88A; Junction to Case Thermal Resistance A:0.21°C/W; N-channel Gate Charge:180nC; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Reverse Recovery Time trr Max:250ns; Termination Type:Through Hole; Voltage Vds Typ:300V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***nell: MOSFET, N, TO-3P; Polarità Transistor:Canale N; Corrente Continua di Drain Id:88A; Tensione Drain Source Vds:300V; Resistenza di Attivazione Rds(on):0.04ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:5V; Dissipazione di Potenza Pd:600W; Modello Case Transistor:TO-3P; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (12-Jan-2017); Capacità Ciss Tipica:6300pF; Carica Gate Canale N:180nC; Corrente Id Max:88A; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Resistenza Termica A da Giunzione a Case:0.21°C/W; Temperatura di Esercizio Min:-55°C; Tempo di Recupero Inverso trr Max:250ns; Tensione Vds Tipica:300V; Tensione Vgs Max:20V; Tensione Vgs di Misurazione Rds on:10V; Tipo di Terminazione:Foro Passante

Market price

型号	制造商	描述	库存	价格
IXTQ88N30P DISTI # IXTQ88N30P-ND	IXYS Corporation	MOSFET N-CH 300V 88A TO-3P RoHS: Compliant Min Qty: 1 Container: Tube	57In Stock	510:$6.2403 120:$7.4481 30:$8.2533 1:$10.0700
IXTQ88N30P DISTI # 747-IXTQ88N30P	IXYS Corporation	MOSFET 88 Amps 300V 0.04 Rds RoHS: Compliant	4	1:$10.5200 10:$9.4700 25:$7.8800 50:$7.3200 100:$7.1600 250:$6.5300 500:$5.9600 1000:$5.6800
IXTQ88N30P DISTI # 1427392	IXYS Corporation	MOSFET, N, TO-3P RoHS: Compliant	1	1:$16.0600 30:$13.1600 120:$11.8800 510:$9.9500
IXTQ88N30P DISTI # 1427392	IXYS Corporation	MOSFET, N, TO-3P RoHS: Compliant	0	1:£8.8600 5:£8.2800 10:£6.2000 50:£5.7600 100:£5.6400

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