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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| FMR11N90E DISTI # FE0000000001044 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 11A I(D), 900V,1ohm,1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET RoHS: Compliant | 0 in Stock0 on Order | |
| FMR11N90ESC DISTI # FE0000000004650 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order |
| 图片 | 型号 | 描述 |
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Mfr.#: FMR1/4B560JTU OMO.#: OMO-FMR1-4B560JTU-1190 |
全新原装 |
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Mfr.#: FMR11988 OMO.#: OMO-FMR11988-1190 |
全新原装 |
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Mfr.#: FMR11N60ES OMO.#: OMO-FMR11N60ES-1190 |
全新原装 |
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Mfr.#: FMR11N90E OMO.#: OMO-FMR11N90E-1190 |
Power Field-Effect Transistor, 11A I(D), 900V,1ohm,1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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Mfr.#: FMR11N90ES OMO.#: OMO-FMR11N90ES-1190 |
全新原装 |
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Mfr.#: FMR1819L OMO.#: OMO-FMR1819L-1190 |
全新原装 |
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Mfr.#: FMR19N60E-51FR OMO.#: OMO-FMR19N60E-51FR-1190 |
全新原装 |
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Mfr.#: FMR19N60ES OMO.#: OMO-FMR19N60ES-1190 |
Power Field-Effect Transistor, 19A I(D),600V,0.365ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET |
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Mfr.#: FMR19N60ES-F236R OMO.#: OMO-FMR19N60ES-F236R-1190 |
全新原装 |
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Mfr.#: FMR1101-104 OMO.#: OMO-FMR1101-104-1190 |
CONNECTOR |