IDH12G65C6XKSA1

IDH12G65C6XKSA1
Mfr. #:
IDH12G65C6XKSA1
制造商:
Infineon Technologies
描述:
Schottky Diodes & Rectifiers SIC DIODES
生命周期:
制造商新产品。
数据表:
IDH12G65C6XKSA1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
IDH12G65C6XKSA1 更多信息
产品属性
属性值
制造商:
英飞凌
产品分类:
肖特基二极管和整流器
RoHS:
Y
产品:
肖特基碳化硅二极管
安装方式:
通孔
包装/案例:
TO-220-2
如果 - 正向电流:
27 A
Vrrm - 重复反向电压:
650 V
Vf - 正向电压:
1.25 V
Ifsm - 正向浪涌电流:
64 A
配置:
单身的
技术:
碳化硅
Ir - 反向电流:
1.2 uA
最低工作温度:
- 55 C
最高工作温度:
+ 175 C
打包:
管子
品牌:
英飞凌科技
Pd - 功耗:
81 W
产品类别:
肖特基二极管和整流器
出厂包装数量:
500
子类别:
二极管和整流器
第 # 部分别名:
IDH12G65C6 SP001595596
单位重量:
0.070548 oz
Tags
IDH12G, IDH12, IDH1, IDH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Diode Schottky SiC 650V 27A 2-Pin(2+Tab) TO-220 Tube
***ronik
SiC-Diode 12A 650V 1,25V TO220
***i-Key
DIODE SCHOTTKY 650V 27A TO220-2
***ark
Sic Schottky Diode, 650V, 27A, To-220; Product Range:coolsic 6G 650V Series; Diode Configuration:single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:27A; Total Capacitive Charge Qc:17.1Nc; Diode Case Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. SIC SCHOTTKY DIODE, 650V, 27A, TO-220; Product Range:CoolSiC 6G 650V Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:27A; Total Capacitive Charge Qc:17.1nC; Diode Case Style:TO-220; No. of Pins:2 Pin; Junction Temperature Tj Max:175°C; Automotive Qualification Standard:-; SVHC:No SVHC (27-Jun-2018); Forward Current If(AV):27A; Forward Surge Current Ifsm Max:64A; Forward Voltage VF Max:1.35V; Operating Temperature Max:175°C; Semiconductor Technology:SiC
***nell
DIODO SCHOTTKY SIC 650V 27A TO-220; Gamma Prodotti:CoolSiC 6G 650V Series; Configurazione Diodo:Singolo; Tensione Inversa Ripetitiva Vrrm Max:650V; Corrente Diretta Continua If:27A; Potenza Reattiva Capacitiva Qc:17.1nC; Modello Involucro Diodo:TO-220; Numero di Pin:2 Pin; Temperatura di Giunzione Tj Max:175°C; Standard di Qualifica Automotive:-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Diretta If(AV):27A; Corrente di Picco Diretta Ifsm Max:64A; Tecnologia Semiconduttori:SiC; Temperatura di Esercizio Max:175°C; Tensione Diretta VF Max:1.35V
***ineon
The CoolSiC Schottky diode 650V G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon proprietary innovative soldering process is combined with a more compact design, thin-wafer technology and a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a best-in-class figure of merit (Q c x V F). | Summary of Features: The lowest V F: 1.25V; Best-in-class figure of merit (Q c x V F); No reverse recovery charge; Temperature independent switching behavior; High dv/dt ruggedness; Optimized thermal behavior | Benefits: Improved system efficiency over all load conditions; Increased system power density; Reduced cooling requirements and increased system reliability; Enables extremely fast switching; Easy and effective match with CoolMOS 7 families; Optimal price performance | Target Applications: Server; Telecom; PC power; Solar; Lighting
CoolSiC™ 650V Schottky 6th Generation Diodes
Infineon CoolSiC™ 650V Schottky 6th Generation Diodes feature a proprietary diffusion soldering process, a more compact design, thin-wafer technology and a novel Schottky metal system. This results in improved efficiency over all load conditions, resulting from a lower figure of merit (Qc x VF). CoolSiC™ Generation 6 complement the 600V and 650V CoolMOS™ 7 families, meeting the most stringent application requirements in this voltage range.
型号 制造商 描述 库存 价格
IDH12G65C6XKSA1
DISTI # V99:2348_18191488
Infineon Technologies AGSIC DIODES0
    IDH12G65C6XKSA1
    DISTI # V36:1790_18191488
    Infineon Technologies AGSIC DIODES0
      IDH12G65C6XKSA1
      DISTI # IDH12G65C6XKSA1-ND
      Infineon Technologies AGDIODE SCHOTTKY 650V 27A TO220-2
      RoHS: Compliant
      Min Qty: 1
      Container: Tube
      1500In Stock
      • 2500:$2.6932
      • 500:$3.3615
      • 100:$3.9488
      • 25:$4.5564
      • 10:$4.8200
      • 1:$5.3700
      IDH12G65C6XKSA1
      DISTI # IDH12G65C6XKSA1
      Infineon Technologies AGSIC DIODES - Rail/Tube (Alt: IDH12G65C6XKSA1)
      RoHS: Compliant
      Min Qty: 500
      Container: Tube
      Americas - 0
      • 5000:$2.4900
      • 3000:$2.5900
      • 2000:$2.6900
      • 1000:$2.7900
      • 500:$2.8900
      IDH12G65C6XKSA1
      DISTI # 33AC2815
      Infineon Technologies AGSIC SCHOTTKY DIODE, 650V, 27A, TO-220,Product Range:CoolSiC 6G 650V Series,Diode Configuration:Single,Repetitive Reverse Voltage Vrrm Max:650V,Continuous Forward Current If:27A,Total Capacitive Charge Qc:17.1nC,Diode Case RoHS Compliant: Yes779
      • 500:$3.4000
      • 250:$3.7900
      • 100:$3.9900
      • 50:$4.1900
      • 25:$4.4000
      • 10:$4.6100
      • 1:$5.4100
      IDH12G65C6XKSA1
      DISTI # 726-IDH12G65C6XKSA1
      Infineon Technologies AGSchottky Diodes & Rectifiers SIC DIODES
      RoHS: Compliant
      1501
      • 1:$5.3600
      • 10:$4.5600
      • 100:$3.9500
      • 250:$3.7500
      • 500:$3.3700
      • 1000:$2.8400
      • 2500:$2.7000
      IDH12G65C6XKSA1
      DISTI # IDH12G65C6
      Infineon Technologies AGDiode: Schottky rectifying,SiC,THT,650V,12A,81W,PG-TO220-244
      • 50:$3.5800
      • 10:$3.9900
      • 3:$4.5100
      • 1:$5.0100
      IDH12G65C6XKSA1
      DISTI # 2779281
      Infineon Technologies AGSIC SCHOTTKY DIODE, 650V, 27A, TO-220
      RoHS: Compliant
      827
      • 1000:$4.0600
      • 500:$4.1400
      • 250:$4.3700
      • 100:$4.6200
      • 10:$5.2100
      • 1:$5.5700
      IDH12G65C6XKSA1
      DISTI # 2779281
      Infineon Technologies AGSIC SCHOTTKY DIODE, 650V, 27A, TO-220835
      • 500:£2.6500
      • 250:£2.9500
      • 100:£3.1000
      • 10:£3.5800
      • 1:£4.6800
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      IXFK100N65X2

      Mfr.#: IXFK100N65X2

      OMO.#: OMO-IXFK100N65X2

      MOSFET MOSFET 650V/100A Ultra Junction X2
      DMN67D8LW-13

      Mfr.#: DMN67D8LW-13

      OMO.#: OMO-DMN67D8LW-13

      MOSFET MOSFET BVDSS
      2SC0115T2A0-12

      Mfr.#: 2SC0115T2A0-12

      OMO.#: OMO-2SC0115T2A0-12

      Power Management Modules 1200V IGBT Driver SSD AAC 15A 1.2W
      DMN67D8LW-13

      Mfr.#: DMN67D8LW-13

      OMO.#: OMO-DMN67D8LW-13-DIODES

      N-CHANNEL ENHANCEMENT MODE MOSFET
      IXFK100N65X2

      Mfr.#: IXFK100N65X2

      OMO.#: OMO-IXFK100N65X2-IXYS-CORPORATION

      MOSFET N-CH 650V 100A TO-264
      2SC0115T2A0-12

      Mfr.#: 2SC0115T2A0-12

      OMO.#: OMO-2SC0115T2A0-12-POWER-INTEGRATIONS

      IC DUAL GATE DRIVER 15A
      BLM21SP700SN1D

      Mfr.#: BLM21SP700SN1D

      OMO.#: OMO-BLM21SP700SN1D-1190

      FERRITE BEAD, 70 OHM, 0402
      KX126-1063

      Mfr.#: KX126-1063

      OMO.#: OMO-KX126-1063-ROHM-SEMI

      ACCELEROMETER 2-8G I2C/SPI 12LGA
      可用性
      库存:
      Available
      订购:
      1984
      输入数量:
      IDH12G65C6XKSA1的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格(美元)
      数量
      单价
      小计金额
      1
      US$5.36
      US$5.36
      10
      US$4.56
      US$45.60
      100
      US$3.95
      US$395.00
      250
      US$3.75
      US$937.50
      500
      US$3.37
      US$1 685.00
      1000
      US$2.84
      US$2 840.00
      2500
      US$2.70
      US$6 750.00
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