FF23MR12W1M1B11BOMA1

FF23MR12W1M1B11BOMA1
Mfr. #:
FF23MR12W1M1B11BOMA1
制造商:
Infineon Technologies
描述:
Discrete Semiconductor Modules
生命周期:
制造商新产品。
数据表:
FF23MR12W1M1B11BOMA1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
FF23MR12W1M1B11BOMA1 更多信息
产品属性
属性值
制造商:
英飞凌
产品分类:
分立半导体模块
RoHS:
Y
产品:
功率 MOSFET 模块
类型:
EasyDUAL 模块
Vf - 正向电压:
4 V
Vgs - 栅源电压:
- 10 V, 20 V
安装方式:
压合
包装/案例:
模块
最低工作温度:
- 40 C
最高工作温度:
+ 150 C
打包:
托盘
配置:
双重的
品牌:
英飞凌科技
晶体管极性:
N通道
秋季时间:
12 ns
Id - 连续漏极电流:
50 A
工作电源电压:
-
Pd - 功耗:
20 mW
产品类别:
分立半导体模块
Rds On - 漏源电阻:
23 mOhms
上升时间:
10 ns
出厂包装数量:
24
子类别:
分立半导体模块
商品名:
酷芯
典型关断延迟时间:
43.5 ns
典型的开启延迟时间:
12 ns
Vds - 漏源击穿电压:
1200 V
Vgs th - 栅源阈值电压:
3.5 V
第 # 部分别名:
FF23MR12W1M1_B11 SP001602224
Tags
FF2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 1200 V 23 mOhm CoolSiC EasyDual PressFIT/NTC Mosfet Module
***ical
Trans MOSFET N-CH SiC 1.2KV 50A 22-Pin EASY1B-2 Tray
***i-Key
MOSFET 2 N-CH 1200V 50A MODULE
***ronik
IGBT 1200V 50A 4,50V
***ark
Mosfet Module, N-Ch, 1.2Kv, 50A; Transistor Polarity:n Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:1.2Kv; On Resistance Rds(On):0.023Ohm; Rds(On) Test Voltage Vgs:-; Threshold Voltage Vgs:4.5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET MODULE, N-CH, 1.2KV, 50A; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.023ohm; Rds(on) Test Voltage Vgs:-; Threshold Voltage Vgs:4.5V; Power Dissipation Pd:20mW; Operating Temperature Max:150°C; Product Range:CoolSic Series; SVHC:No SVHC (27-Jun-2018)
***nell
MODULO MOSFET, CA-N, 1.2KV, 50A; Polarità Transistor:Canale N; Corrente Continua di Drain Id:50A; Tensione Drain Source Vds:1.2kV; Resistenza di Attivazione Rds(on):0.023ohm; Tensione Vgs di Misura Rds(on):-; Tensione di Soglia Vgs:4.5V; Dissipazione di Potenza Pd:20mW; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolSic Series; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
EasyDUAL 1B 1200 V / 23 m halfbridge module with CoolSiC MOSFET, NTC and PressFIT Contact Technology | Summary of Features: High current density; Best in class switching and conduction losses; Low inductive design; Integrated NTC temperature sensor; PressFIT contact technology; RoHS-compliant modules | Benefits: Highest efficiency for reduced cooling effort; Higher frequency operation; Increased power density; Optimized customers development cycle time and cost | Target Applications: drives; solar; ups; battery-charger
1200V CoolSiC™ Modules
Infineon Technologies 1200V CoolSiC™ Modules are Silicon Carbide (SiC) MOSFET modules that offer good levels of efficiency and system flexibility. These modules come with Near Threshold Circuits (NTC) and PressFIT contact technology. The CoolSiC modules feature high current density, best in class switching and conduction losses, and low inductive design. These modules provide high-frequency operation, increased power density, and optimized development cycle time and cost.
Gen 5 1200V CoolSiC™ Schottky Diodes
Infineon Gen 5 1200V CoolSiC™ Schottky Diodes are offered with forward currents up to 40A for TO-247, 20A in TO-220 and 10A in DPAK. CoolSiC Diodes target solar inverters, UPS, 3P SMPS, energy storage and motor drives applications. With reduction of forward voltage and temperature dependency, the diodes bring a new level of system efficiency.
型号 制造商 描述 库存 价格
FF23MR12W1M1B11BOMA1
DISTI # V99:2348_18204378
Infineon Technologies AGLOW POWER EASY16
  • 1:$92.6000
FF23MR12W1M1B11BOMA1
DISTI # FF23MR12W1M1B11BOMA1-ND
Infineon Technologies AGMOSFET 2 N-CH 1200V 50A MODULE
RoHS: Compliant
Min Qty: 1
Container: Tray
16In Stock
  • 1:$92.7700
FF23MR12W1M1B11BOMA1
DISTI # 33632614
Infineon Technologies AGLOW POWER EASY50
  • 1:$79.6308
FF23MR12W1M1B11BOMA1
DISTI # 31241752
Infineon Technologies AGLOW POWER EASY16
  • 1:$92.6000
FF23MR12W1M1B11BOMA1
DISTI # FF23MR12W1M1B11BOMA1
Infineon Technologies AGIGBTs - Trays (Alt: FF23MR12W1M1B11BOMA1)
RoHS: Compliant
Min Qty: 24
Container: Tray
Americas - 0
  • 240:$72.0900
  • 144:$73.7900
  • 96:$75.6900
  • 48:$77.6900
  • 24:$78.6900
FF23MR12W1M1B11BOMA1
DISTI # SP001602224
Infineon Technologies AGIGBTs (Alt: SP001602224)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€71.5900
  • 500:€72.5900
  • 100:€73.4900
  • 50:€74.7900
  • 25:€78.6900
  • 10:€79.5900
  • 1:€81.9900
FF23MR12W1M1B11BOMA1
DISTI # 24AC8570
Infineon Technologies AGMOSFET MODULE, N-CH, 1.2KV, 50A,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:-,Threshold Voltage Vgs:4.5V,Power RoHS Compliant: Yes18
  • 25:$87.6400
  • 10:$90.6700
  • 5:$94.9400
  • 1:$96.7200
FF23MR12W1M1B11BOMA1
DISTI # 726-FF23MR12W1M1B11
Infineon Technologies AGDiscrete Semiconductor Modules
RoHS: Compliant
86
  • 1:$95.7600
  • 5:$94.0000
  • 10:$89.7700
  • 25:$86.7700
FF23MR12W1M1B11BOMA1
DISTI # 2771413
Infineon Technologies AGMOSFET MODULE, N-CH, 1.2KV, 50A18
  • 50:£64.8900
  • 10:£66.2100
  • 5:£71.7200
  • 1:£73.0700
FF23MR12W1M1B11BOMA1
DISTI # XSKDRABV0050327
Infineon Technologies AG 
RoHS: Compliant
65 in Stock0 on Order
  • 65:$107.0400
  • 24:$114.6900
FF23MR12W1M1B11BOMA1
DISTI # 2771413
Infineon Technologies AGMOSFET MODULE, N-CH, 1.2KV, 50A
RoHS: Compliant
18
  • 1:$141.5600
图片 型号 描述
FF8MR12W2M1B11BOMA1

Mfr.#: FF8MR12W2M1B11BOMA1

OMO.#: OMO-FF8MR12W2M1B11BOMA1

Discrete Semiconductor Modules EasyDUAL 2B 1200 V, 8 mO halfbridge module with CoolSiC MOSFET, NTC and PressFIT Contact Technology.
FF6MR12W2M1B11BOMA1

Mfr.#: FF6MR12W2M1B11BOMA1

OMO.#: OMO-FF6MR12W2M1B11BOMA1

Discrete Semiconductor Modules EasyDUAL 2B 1200 V, 6 mO halfbridge module with CoolSiC MOSFET, NTC and PressFIT Contact Technology.
FP25R12W1T7B11BPSA1

Mfr.#: FP25R12W1T7B11BPSA1

OMO.#: OMO-FP25R12W1T7B11BPSA1

IGBT Modules IGBT Module with TRENCHSTOP IGBT7
GXE10001

Mfr.#: GXE10001

OMO.#: OMO-GXE10001

Trimmer / Variable Capacitors 1.8-10PF 300V TH CAP TRIMMER
DSC1101CI5-100.0000T

Mfr.#: DSC1101CI5-100.0000T

OMO.#: OMO-DSC1101CI5-100-0000T-MICROCHIP-TECHNOLOGY

Oscillator MEMS 100MHz ±10ppm (Stability) 15pF CMOS 55% 2.5V/3.3V 6-Pin QFN SMD T/R
RPM3.3-1.0

Mfr.#: RPM3.3-1.0

OMO.#: OMO-RPM3-3-1-0-RECOM-POWER

1A DC/DC-Converter 'INNOLINE' SMD reg
RGT1608P-104-B-T5

Mfr.#: RGT1608P-104-B-T5

OMO.#: OMO-RGT1608P-104-B-T5-SUSUMU

Thin Film Resistors - SMD 100K ohm 0.1% 1/10W AEC-Q200
B58035U9754M062

Mfr.#: B58035U9754M062

OMO.#: OMO-B58035U9754M062-EPCOS

CAP CER 0.75UF 900V 6SMD
GXE10001

Mfr.#: GXE10001

OMO.#: OMO-GXE10001-SPRAGUE-GOODMAN

CAP TRIMMER 1.8-10PF 300V TH
FF6MR12W2M1B11BOMA1

Mfr.#: FF6MR12W2M1B11BOMA1

OMO.#: OMO-FF6MR12W2M1B11BOMA1-INFINEON-TECHNOLOGIES

MOSFET MODULE 1200V 200A
可用性
库存:
74
订购:
2057
输入数量:
FF23MR12W1M1B11BOMA1的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$95.76
US$95.76
5
US$94.00
US$470.00
10
US$89.77
US$897.70
25
US$86.77
US$2 169.25
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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