BSM25GB120DN2

BSM25GB120DN2
Mfr. #:
BSM25GB120DN2
制造商:
Rochester Electronics, LLC
描述:
IGBT Modules 1200V 25A DUAL
生命周期:
制造商新产品。
数据表:
BSM25GB120DN2 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
Tags
BSM25GB, BSM25G, BSM25, BSM2, BSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ser
IGBT - Standard Modules 1200V 25A DUAL
型号 制造商 描述 库存 价格
BSM 25 GB 120 DN2
DISTI # BSM25GB120DN2
Infineon Technologies AGTrans IGBT Module N-CH 1.2kV 38A 7-Pin 34mm - Bulk (Alt: BSM25GB120DN2)
RoHS: Not Compliant
Min Qty: 11
Container: Bulk
Americas - 0
  • 110:$30.4900
  • 55:$30.9900
  • 33:$32.0900
  • 22:$33.2900
  • 11:$34.5900
BSM25GB120DN2
DISTI # 641-BSM25GB120DN2
Infineon Technologies AGIGBT Modules 1200V 25A DUAL
RoHS: Not compliant
0
    BSM25GB120DN2Infineon Technologies AGInsulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel
    RoHS: Compliant
    43
    • 1000:$31.6300
    • 500:$33.3000
    • 100:$34.6700
    • 25:$36.1500
    • 1:$38.9300
    BSM25GB120DN2Eupec Gmbh & Co KgInsulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel
    RoHS: Not Compliant
    21
      图片 型号 描述
      BSM25GP120

      Mfr.#: BSM25GP120

      OMO.#: OMO-BSM25GP120

      IGBT Modules 1200V 25A PIM
      BSM25GD120DN2E3224

      Mfr.#: BSM25GD120DN2E3224

      OMO.#: OMO-BSM25GD120DN2E3224

      IGBT Modules N-CH 1.2KV 35A
      BSM25GD120DLCE3224BOSA1

      Mfr.#: BSM25GD120DLCE3224BOSA1

      OMO.#: OMO-BSM25GD120DLCE3224BOSA1-1190

      Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel
      BSM25GD120DLC3224

      Mfr.#: BSM25GD120DLC3224

      OMO.#: OMO-BSM25GD120DLC3224-1190

      Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel
      BSM25GD120D

      Mfr.#: BSM25GD120D

      OMO.#: OMO-BSM25GD120D-1190

      全新原装
      BSM25GD120D2

      Mfr.#: BSM25GD120D2

      OMO.#: OMO-BSM25GD120D2-1190

      全新原装
      BSM25GD120DLC_E3224

      Mfr.#: BSM25GD120DLC_E3224

      OMO.#: OMO-BSM25GD120DLC-E3224-1190

      全新原装
      BSM25GD120DN2BOSA1

      Mfr.#: BSM25GD120DN2BOSA1

      OMO.#: OMO-BSM25GD120DN2BOSA1-INFINEON-TECHNOLOGIES

      35 A, 1200 V, N-CHANNEL IGBT
      BSM25GD120DN2E3224BOSA1

      Mfr.#: BSM25GD120DN2E3224BOSA1

      OMO.#: OMO-BSM25GD120DN2E3224BOSA1-INFINEON-TECHNOLOGIES

      IGBT 2 LOW POWER ECONO2-2
      BSM25GD120DN2E3224

      Mfr.#: BSM25GD120DN2E3224

      OMO.#: OMO-BSM25GD120DN2E3224-125

      IGBT Modules N-CH 1.2KV 35A
      可用性
      库存:
      Available
      订购:
      3500
      输入数量:
      BSM25GB120DN2的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格(美元)
      数量
      单价
      小计金额
      1
      US$47.44
      US$47.44
      10
      US$45.07
      US$450.73
      100
      US$42.70
      US$4 270.05
      500
      US$40.33
      US$20 164.15
      1000
      US$37.96
      US$37 956.00
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