IRF5305STRLPBF

Mfr. #:: IRF5305STRLPBF
制造商:: Infineon / IR
描述:: MOSFET MOSFT PCh -55V -31A 60mOhm 42nC
生命周期:: 制造商新产品。
数据表:: IRF5305STRLPBF 数据表
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产品属性
属性值

制造商：: 英飞凌

产品分类：: MOSFET

RoHS：: Y

技术：: 硅

安装方式：: 贴片/贴片

包装/案例：: TO-252-3

通道数：: 1 Channel

晶体管极性：: P-通道

Vds - 漏源击穿电压：: 55 V

Id - 连续漏极电流：: 31 A

Rds On - 漏源电阻：: 60 mOhms

Vgs - 栅源电压：: 20 V

Qg - 门电荷：: 42 nC

Pd - 功耗：: 110 W

配置：: 单身的

打包：: 卷轴

高度：: 2.3 mm

长度：: 6.5 mm

晶体管类型：: 1 P-Channel

宽度：: 6.22 mm

品牌：: 英飞凌/红外

产品类别：: MOSFET

出厂包装数量：: 800

子类别：: MOSFET

第 # 部分别名：: SP001564840

单位重量：: 0.139332 oz

Tags: IRF5305STRLPBF, IRF5305STRLP, IRF5305STRL, IRF5305STR, IRF5305ST, IRF5305S, IRF5305, IRF530, IRF53, IRF5, IRF

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF5305STRLPBF 描述

***ineon SCT: -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ure Electronics: Single P-Channel 55 V 60 mOhm 42 nC HEXFET® Power Mosfet - D2PAK

***nell: MOSFET, P, D2-PAK; Transistor Polarity: P Channel; Continuous Drain Current Id: 31A; Drain Source Voltage Vds: -55V; On Resistance Rds(on): 0.06ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

***trelec: Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -31 / Drain-Source Voltage (Vds) V = -55 / ON Resistance (Rds(on)) mOhm = 60 / Gate-Source Voltage V = 20 / Fall Time ns = 63 / Rise Time ns = 66 / Turn-OFF Delay Time ns = 39 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 3.8

***icroelectronics: N-channel 60 V, 0.22 Ohm typ., 38 A STripFET(TM) II Power MOSFET in a D2PAK package

***ure Electronics: N-Channel 60 V 38 A 28 mOhm 80 W Surface Mount STripFET Mosfet - D2PAK

***ical: Trans MOSFET N-CH 60V 38A Automotive 3-Pin(2+Tab) D2PAK T/R

***ment14 APAC: MOSFET, N CH, 60V, 38A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:60V; On Resistance Rds(on):235mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:80W; Operating Temperature Range:-65°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:38A; Package / Case:D2-PAK; Power Dissipation Pd:80W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***emi: N-Channel Power MOSFET, Logic Level, QFET®, 60 V, 32 A, 35 mΩ, D2PAK

***ark: TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,32A I(D),TO-263AB

***ure Electronics: N-Channel 60 V 0.035 Ohm Surface Mount Mosfet - D2PAK-3

***et Europe: Trans MOSFET N-CH 60V 32A 3-Pin(2+Tab) D2PAK T/R

***enic: 60V 32A 35m´Î@10V16A 79W 2.5V@250Ã×A N Channel D2PAK¨×TO-263AB¨Ø MOSFETs ROHS

***r Electronics: Power Field-Effect Transistor, 32A I(D), 60V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N CH, 60V, 32A, TO263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 32A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.027ohm; Available until stocks are exhausted Alternative available

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ure Electronics: Single N-Channel 55 V 0.06 Ohm 25 nC HEXFET® Power Mosfet - D2PAK

***p One Stop: Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) D2PAK T/R

***eco: IRLZ34NSTRLPBF,MOSFET, 55V, 30 A, 35 MOHM, 16.7 NC QG, LOGIC

*** Stop Electro: Power Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:30A; On Resistance, Rds(on):60mohm; Rds(on) Test Voltage, Vgs:16V; Package/Case:D-Pak; Power Dissipation, Pd:68W ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N, 55V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:55V; On Resistance Rds(on):35ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:68W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 100°C:21A; Cont Current Id @ 25°C:30A; Current Id Max:30A; Package / Case:D2-PAK; Power Dissipation Pd:68W; Power Dissipation Pd:68W; Pulse Current Idm:110A; Rth:2.2; Termination Type:SMD; Voltage Vds:55V; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V; Voltage Vgs th Min:1V

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 30 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 35 / Gate-Source Voltage V = 16 / Fall Time ns = 29 / Rise Time ns = 100 / Turn-OFF Delay Time ns = 21 / Turn-ON Delay Time ns = 8.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 68

***et Europe: Transistor MOSFET N-CH 55V 29A 3-Pin D2PAK T/R

***ure Electronics: Single N-Channel 55 V 0.04 Ohm 34 nC HEXFET® Power Mosfet - D2PAK

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***fin: Transistor NPN Field Effect IRFZ34/SO/IRFZ34NS INTERNATIONAL RECTIFIER Ampere=26 V=55 TO263

***(Formerly Allied Electronics): Power MOSFET,N-Ch,VDSS 55V,RDS(ON) 0.04Ohm,ID 29A,D2Pak,PD 68W,VGS+/-20V,Qg 34nC

***eco: IRFZ34NSTRLPBF,MOSFET, 55V, 29 A, 40 MOHM, 22.7 NC QG, D2-PA

*** Stop Electro: Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ark: N Channel Mosfet, 55V, 29A, D2-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:29A; On Resistance Rds(On):0.04Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes

***-Wing Technology: Tube Surface Mount P-Channel Single Mosfet Transistor 27.5A Ta 27.5A 120W 190ns

***ser: MOSFETs- Power and Small Signal -60V -27.5A Pchannel No-Cancel/No-Return

***r Electronics: Power Field-Effect Transistor, 27.5A I(D), 60V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ser: MOSFETs- Power and Small Signal NFET 60V 30A

***i-Key: MOSFET N-CH 60V 27A D2PAK

***r Electronics: Power Field-Effect Transistor, 27A I(D), 60V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***el Electronic: RES SMD 160 OHM 1% 1/4W 1206

Market price

型号	制造商	描述	库存	价格
IRF5305STRLPBF DISTI # V72:2272_13889606	Infineon Technologies AG	Trans MOSFET P-CH 55V 31A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	16	10:$0.8613 1:$1.1352
IRF5305STRLPBF DISTI # IRF5305STRLPBFCT-ND	Infineon Technologies AG	MOSFET P-CH 55V 31A D2PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1772In Stock	100:$1.2208 10:$1.5450 1:$1.7400
IRF5305STRLPBF DISTI # IRF5305STRLPBFDKR-ND	Infineon Technologies AG	MOSFET P-CH 55V 31A D2PAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1772In Stock	100:$1.2208 10:$1.5450 1:$1.7400
IRF5305STRLPBF DISTI # IRF5305STRLPBFTR-ND	Infineon Technologies AG	MOSFET P-CH 55V 31A D2PAK RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR)	800In Stock	800:$0.8031
IRF5305STRLPBF DISTI # 30690092	Infineon Technologies AG	Trans MOSFET P-CH 55V 31A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	4800	200:$0.8147 100:$0.9244 50:$1.0914 10:$1.3260
IRF5305STRLPBF DISTI # 30719847	Infineon Technologies AG	Trans MOSFET P-CH 55V 31A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	800	800:$0.5328
IRF5305STRLPBF DISTI # 30606096	Infineon Technologies AG	Trans MOSFET P-CH 55V 31A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	666	11:$2.3750
IRF5305STRLPBF DISTI # 27565934	Infineon Technologies AG	Trans MOSFET P-CH 55V 31A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	16	13:$1.1352
IRF5305STRLPBF DISTI # IRF5305STRLPBF	Infineon Technologies AG	Trans MOSFET P-CH 55V 31A 3-Pin(2+Tab) D2PAK T/R (Alt: IRF5305STRLPBF) RoHS: Compliant Min Qty: 1600 Container: Tape and Reel	Asia - 8000	800:$0.5085 1600:$0.4876 2400:$0.4810 4000:$0.4623 8000:$0.4563 20000:$0.4449 40000:$0.4341
IRF5305STRLPBF DISTI # IRF5305STRLPBF	Infineon Technologies AG	Trans MOSFET P-CH 55V 31A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF5305STRLPBF) RoHS: Compliant Min Qty: 1600 Container: Reel	Americas - 0	1600:$0.5059 3200:$0.4879 4800:$0.4699 8000:$0.4549 16000:$0.4469
IRF5305STRLPBF DISTI # SP001564840	Infineon Technologies AG	Trans MOSFET P-CH 55V 31A 3-Pin(2+Tab) D2PAK T/R (Alt: SP001564840) RoHS: Compliant Min Qty: 800 Container: Tape and Reel	Europe - 0	800:€0.5399 1600:€0.4409 3200:€0.4049 4800:€0.3729 8000:€0.3469
IRF5305STRLPBF DISTI # 40M7919	Infineon Technologies AG	P CHANNEL MOSFET, -55V, 31A, D2-PAK,Transistor Polarity:P Channel,Continuous Drain Current Id:-31A,Drain Source Voltage Vds:-55V,On Resistance Rds(on):0.06ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-4V RoHS Compliant: Yes	819	1:$1.6000 10:$1.3600 25:$1.2500 50:$1.1400 100:$1.0400 250:$0.9800 500:$0.9200
IRF5305STRLPBF. DISTI # 26AC0593	Infineon Technologies AG	P CHANNEL MOSFET, -55V, 31A, D2-PAK,Transistor Polarity:P Channel,Continuous Drain Current Id:-31A,Drain Source Voltage Vds:-55V,On Resistance Rds(on):0.06ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-4V RoHS Compliant: Yes	0
IRF5305STRLPBF DISTI # 70017469	Infineon Technologies AG	MOSFET,Power,P-Ch,VDSS -55V,RDS(ON) 0.06Ohm,ID -31A,D2Pak,PD 110W,VGS +/-20V RoHS: Compliant	40	1:$2.2340 10:$1.9710 100:$1.7180 500:$1.4890 1000:$1.3140
IRF5305STRLPBF	Infineon Technologies AG	Single P-Channel 55V 0.06 Ohm 63 nC HEXFET Power Mosfet - D2PAK RoHS: Compliant	11Cut Tape/Mini-Reel	1:$0.7850 50:$0.6900 100:$0.6750 250:$0.6550 500:$0.6300
IRF5305STRLPBF	Infineon Technologies AG	Single P-Channel 55V 0.06 Ohm 63 nC HEXFET Power Mosfet - D2PAK RoHS: Compliant	7200Reel	800:$0.5650 1600:$0.5450
IRF5305STRLPBF DISTI # 942-IRF5305STRLPBF	Infineon Technologies AG	MOSFET MOSFT PCh -55V -31A 60mOhm 42nC RoHS: Compliant	2830	1:$1.4500 10:$1.2400 100:$0.9460 500:$0.8360 800:$0.6600 2400:$0.5850 9600:$0.5630
IRF5305STRLPBF	International Rectifier		654
IRF5305STRLPBF DISTI # 8312834P	Infineon Technologies AG	HEXFET P-CH MOSFET 31A 55V D2PAK, RL	1890	100:£0.6840 200:£0.6500 400:£0.6150 800:£0.4770
IRF5305STRLPBF DISTI # 8312834	Infineon Technologies AG	HEXFET P-CH MOSFET 31A 55V D2PAK, PK	200	10:£0.9640 100:£0.6840 200:£0.6500 400:£0.6150 800:£0.4770
IRF5305STRLPBF DISTI # IRF5305STRLPBF	Infineon Technologies AG	Transistor: P-MOSFET,unipolar,-55V,-31A,110W,D2PAK	1	1:$0.8235 3:$0.7089 10:$0.5695 100:$0.4944
IRF5305STRLPBF DISTI # IRF5305SPBF-GURT	Infineon Technologies AG	P-Ch 55V 31A 110W 0,06R DPak RoHS: Compliant	800	10:€0.6710 50:€0.4910 200:€0.4310 500:€0.4150
IRF5305STRLPBF	Infineon Technologies AG	INSTOCK	1163
IRF5305STRLPBF DISTI # C1S322000480791	Infineon Technologies AG	Trans MOSFET P-CH 55V 31A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	666	100:$1.0700 50:$1.2600 10:$1.5500 1:$1.9000
IRF5305STRLPBF DISTI # C1S322000480782	Infineon Technologies AG	Trans MOSFET P-CH 55V 31A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	16	10:$0.8613
IRF5305STRLPBF DISTI # C1S322000480773	Infineon Technologies AG	Trans MOSFET P-CH 55V 31A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	4800	1600:$0.5770 200:$0.6440 100:$0.7310 50:$0.8640 10:$1.0500 1:$2.0600
IRF5305STRLPBF	Infineon Technologies AG	-55V,60m,-31A,P-Channel Power MOSFET	1250	1:$1.0200 100:$0.8500 500:$0.7500 1000:$0.7300
IRF5305STRLPBF DISTI # 2577177	Infineon Technologies AG	MOSFET, P-CH, -55V, -31A, TO-263-3 RoHS: Compliant	645	1:$2.3000 10:$1.9700 100:$1.5100 500:$1.3300 800:$1.0500 2400:$0.9270 9600:$0.8910
IRF5305STRLPBF DISTI # 2577177	Infineon Technologies AG	MOSFET, P-CH, -55V, -31A, TO-263-3 RoHS: Compliant	515	5:£0.9830 25:£0.9540 100:£0.6630 250:£0.6270 500:£0.4870
IRF5305STRLPBF DISTI # XSFP00000074383	Infineon Technologies AG	RoHS: Compliant	18844	800:$0.8600 18844:$0.8062

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	Mfr.#: RC0603FR-071K5L OMO.#: OMO-RC0603FR-071K5L-YAGEO	Thick Film Resistors - SMD 1.5K OHM 1%
	Mfr.#: RC0603FR-07100KL OMO.#: OMO-RC0603FR-07100KL-YAGEO	Thick Film Resistors - SMD 100K OHM 1%
	Mfr.#: RC0603FR-0712KL OMO.#: OMO-RC0603FR-0712KL-YAGEO	Thick Film Resistors - SMD 12K OHM 1%
	Mfr.#: RC0603FR-07220RL OMO.#: OMO-RC0603FR-07220RL-YAGEO	Thick Film Resistors - SMD 220 OHM 1%

IRF5305STRLPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes