IPB65R310CFDAATMA1

Mfr. #:: IPB65R310CFDAATMA1
制造商:: Infineon Technologies
描述:: RF Bipolar Transistors MOSFET N-Ch 650V 11.4A D2PAK-2
生命周期:: 制造商新产品。
数据表:: IPB65R310CFDAATMA1 数据表
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ECAD Model:
更多信息:: IPB65R310CFDAATMA1 更多信息

产品属性
属性值

制造商: 英飞凌科技

产品分类: 晶体管 - FET、MOSFET - 单

系列: IPB65R310

打包: 卷轴

部分别名: IPB65R310CFDA IPB65R310CFDAXT SP000879440

单位重量: 0.068654 oz

商品名: 酷摩

包装盒: TO-263-3

技术: 硅

通道数: 1 Channel

晶体管型: 1 N-Channel

Id 连续漏极电流: 11.4 A

Vds-漏-源-击穿电压: 650 V

Rds-On-Drain-Source-Resistance: 310 mOhms

晶体管极性: N通道

Tags: IPB65R310CFDA, IPB65R31, IPB65R3, IPB65, IPB6, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB65R310CFDAATMA1 描述

***ical: Trans MOSFET N-CH 650V 11.4A Automotive 3-Pin(2+Tab) D2PAK T/R

***et: Trans MOSFET N-CH 650V 11.4A 3-Pin(2+Tab) TO-263 T/R

***et Europe: Trans MOSFET N-CH 650V 11.4A 3-Pin TO-263 T/R

***i-Key: MOSFET N-CH TO263-3

***ineon: 650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting

IPB65R310CFDAATMA1 更多信息

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

Market price

型号	制造商	描述	库存	价格
IPB65R310CFDAATMA1 DISTI # IPB65R310CFDAATMA1-ND	Infineon Technologies AG	MOSFET N-CH TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	1000:$1.4985
IPB65R310CFDAATMA1 DISTI # SP000879440	Infineon Technologies AG	Trans MOSFET N-CH 650V 11.4A 3-Pin TO-263 T/R (Alt: SP000879440) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	1000:€1.5639 2000:€1.3029 4000:€1.2029 6000:€1.1169 10000:€1.0429
IPB65R310CFDAXT DISTI # IPB65R310CFDAATMA1	Infineon Technologies AG	Trans MOSFET N-CH 650V 11.4A 3-Pin(2+Tab) TO-263 T/R - Tape and Reel (Alt: IPB65R310CFDAATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$1.2900 2000:$1.2900 4000:$1.1900 6000:$1.1900 10000:$1.0900
IPB65R310CFDA DISTI # 726-IPB65R310CFDA	Infineon Technologies AG	MOSFET N-Ch 650V 11.4A D2PAK-2 RoHS: Compliant	0	1:$2.7600 10:$2.3400 100:$1.8700 500:$1.6400 1000:$1.3600 2000:$1.2600 5000:$1.2200
IPB65R310CFDAATMA1 DISTI # 726-IPB65R310CFDAATM	Infineon Technologies AG	MOSFET N-Ch 650V 11.4A D2PAK-2 RoHS: Compliant	0	1:$2.7600 10:$2.3400 100:$1.8700 500:$1.6400 1000:$1.3600 2000:$1.2600 5000:$1.2200

相关产品

图片	型号	描述
	Mfr.#: IPB65R310CFDATMA1 OMO.#: OMO-IPB65R310CFDATMA1	MOSFET N-Ch 650V 11.4A D2PAK-2 CoolMOS CFD2
	Mfr.#: IPB65R310CFD OMO.#: OMO-IPB65R310CFD	MOSFET N-Ch 650V 11.4A D2PAK-2 CoolMOS CFD2
	Mfr.#: IPB65R310CFDAATMA1 OMO.#: OMO-IPB65R310CFDAATMA1	MOSFET N-Ch 650V 11.4A D2PAK-2
	Mfr.#: IPB65R310CFDATMA2 OMO.#: OMO-IPB65R310CFDATMA2-INFINEON-TECHNOLOGIES	LOW POWER_LEGACY
	Mfr.#: IPB65R310CFDAXT OMO.#: OMO-IPB65R310CFDAXT-1190	Trans MOSFET N-CH 650V 11.4A 3-Pin(2+Tab) TO-263 T/R - Tape and Reel (Alt: IPB65R310CFDAATMA1)
	Mfr.#: IPB65R310CFD OMO.#: OMO-IPB65R310CFD-1190	MOSFET N-Ch 650V 11.4A D2PAK-2 CoolMOS CFD2
	Mfr.#: IPB65R310CFD(SP00074503 OMO.#: OMO-IPB65R310CFD-SP00074503-1190	全新原装
	Mfr.#: IPB65R310CFD(SP000745032 OMO.#: OMO-IPB65R310CFD-SP000745032-1190	全新原装
	Mfr.#: IPB65R310CFDATMA1 OMO.#: OMO-IPB65R310CFDATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 650V 11.4A TO263
	Mfr.#: IPB65R310CFDAATMA1 OMO.#: OMO-IPB65R310CFDAATMA1-INFINEON-TECHNOLOGIES	RF Bipolar Transistors MOSFET N-Ch 650V 11.4A D2PAK-2