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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| BUZ32H3045AATMA1 DISTI # BUZ32H3045AATMA1-ND | Infineon Technologies AG | MOSFET N-CH 200V 9.5A TO-263 RoHS: Compliant Min Qty: 1000 Container: Tube | Limited Supply - Call | |
| BUZ32 H3045A DISTI # 726-BUZ32H3045A | Infineon Technologies AG | MOSFET N-Ch 200V 9.5A TO220-3 RoHS: Compliant | 0 | |
| BUZ32H3045A | Infineon Technologies AG | Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA RoHS: Compliant | 1249 |
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| 图片 | 型号 | 描述 |
|---|---|---|
|
Mfr.#: BUZ32 OMO.#: OMO-BUZ32 |
MOSFET N-Ch 200V 9.5A TO220-3 |
|
Mfr.#: BUZ32 E3045 OMO.#: OMO-BUZ32-E3045-1190 |
全新原装 |
|
Mfr.#: BUZ32 E3045A |
MOSFET N-CH 200V 9.5A D2PAK |
|
|
Mfr.#: BUZ325 OMO.#: OMO-BUZ325-1190 |
全新原装 |
|
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Mfr.#: BUZ325 , MMBZ20VA OMO.#: OMO-BUZ325-MMBZ20VA-1190 |
全新原装 |
|
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Mfr.#: BUZ326 OMO.#: OMO-BUZ326-1190 |
全新原装 |
|
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Mfr.#: BUZ32E3045 OMO.#: OMO-BUZ32E3045-1190 |
Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BUZ32H3045A OMO.#: OMO-BUZ32H3045A-1190 |
Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA |
|
|
Mfr.#: BUZ32H3045AATMA1 |
MOSFET N-CH 200V 9.5A TO-263 |
|
|
Mfr.#: BUZ32HXKSA1 OMO.#: OMO-BUZ32HXKSA1-1190 |
- Bulk (Alt: BUZ32HXKSA1) |
