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FDMS2510SDC

FDMS2510SDC
Mfr. #:
FDMS2510SDC
制造商:
ON Semiconductor / Fairchild
描述:
MOSFET 20V N-Chan Dual Cool PowerTrench SyncFET
生命周期:
制造商新产品。
数据表:
FDMS2510SDC 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商：
安森美半导体
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
Power-56-8
通道数：
2 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
25 V
Id - 连续漏极电流：
49 A
Rds On - 漏源电阻：
2.9 mOhms
Vgs th - 栅源阈值电压：
1.7 V
Vgs - 栅源电压：
20 V
Qg - 门电荷：
15 nC
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
60 W
配置：
双重的
打包：
卷轴
高度：
1.1 mm
长度：
6 mm
晶体管类型：
2 N-Channel
宽度：
5 mm
品牌：
安森美半导体/飞兆半导体
正向跨导 - 最小值：
159 S
产品类别：
MOSFET
出厂包装数量：
3000
子类别：
MOSFET
单位重量：
0.003175 oz
Tags
FDMS25, FDMS2, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Transistor MOSFET Array Dual N-Channel 25V 28A 8-Pin Power 56 T/R
***ment14 APAC
N CH MOSFET, 25V, 28A, 8-PWR56; Transist; N CH MOSFET, 25V, 28A, 8-PWR56; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:25V; On Resistance Rds(on):2.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; No. of Pins:8
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.
***emi
N-Channel PowerTrench® SyncFET™ 30V, 49A, 2.8mΩ
***r Electronics
Power Field-Effect Transistor, 24A I(D), 30V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
The FDMS8025S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
***nell
MOSFET, N CH, 30V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:50W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***Yang
Trans MOSFET N-CH 30V 26A 8-Pin Power 56 T/R - Tape and Reel
*** Stop Electro
Power Field-Effect Transistor, 26A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***nell
MOSFET, N CH, 30V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:59W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMS8023S has been designed to minimize losses in power conversion application. Advancements in both Silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
*** Electronics
FAIRCHILD SEMICONDUCTOR FDMS8570SDC MOSFET Transistor, N Channel, 60 A, 25 V, 0.0021 ohm, 10 V, 1.5 V
***r Electronics
Power Field-Effect Transistor, 28A I(D), 25V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***el Electronic
Embedded - Microcontrollers 3 (168 Hours) 30-LSSOP (0.240, 6.10mm Width) 21 2K x 8 Internal DMA, LVD, POR, PWM, WDT Surface Mount Tray 16-Bit IC MCU 16BIT 32KB FLASH 30LSSOP
***nell
MOSFET, N-CH, 25V, 8PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0021ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:59W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
***rchild Semiconductor
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process.Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.
***ure Electronics
Single N-Channel 20 V 0.0029 Ohms Surface Mount Power Mosfet - SOIC-8
***nell
N CHANNEL MOSFET, 20V, 50A, SOIC
***et
Trans MOSFET N-CH 20V 30A 8-Pin PowerPAK SO T/R
***enic
20V 50A 50W 2.9m´Î@10V10A 2.6V@250Ã×A N Channel PowerPAK SO-8 MOSFETs ROHS
*** Electronics
MOSFET 20V 50A 50W 2.9mohm @ 10V
***ark
MOSFET, N, SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:50A; On State Resistance:0.0029ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.6V; Case Style:PowerPAK; ;RoHS Compliant: Yes
***ure Electronics
Single N-Channel 30 V 0.0028 Ohm 69 W Surface Mount Power Mosfet - PowerPAK-SO-8
***ical
Trans MOSFET N-CH 30V 50A 8-Pin PowerPAK SO EP T/R
***ukat
N-Ch 30V 50A 5,2W 0,0028R PowerPakSO8
*** Electronics
MOSFET 30 Volts 50 Amps 69 Watts
***S
French Electronic Distributor since 1988
***ure Electronics
Single N-Channel 30 V 50 A 69 W 1.8 mOhm Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 30V 50A 8-Pin PowerPAK SO EP T/R
***ponent Sense
MOSFET 30V 50A 69W 2.5mohm @ 10V
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 33.3A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ment14 APAC
MOSFET, N CH, 30V, 50A, PPAK SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.05mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:69W; Voltage Vgs Max:20V
型号 制造商 描述 库存 价格
FDMS2510SDC
DISTI # FDMS2510SDCTR-ND		ON SemiconductorMOSFET N-CH 25V 28A POWER56
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    FDMS2510SDC
    DISTI # FDMS2510SDCCT-ND    		ON SemiconductorMOSFET N-CH 25V 28A POWER56
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      FDMS2510SDC
      DISTI # FDMS2510SDCDKR-ND      		ON SemiconductorMOSFET N-CH 25V 28A POWER56
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        FDMS2510SDC
        DISTI # FDMS2510SDC        		ON SemiconductorTrans MOSFET N-CH 25V 28A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS2510SDC)
        RoHS: Not Compliant
        Container: Reel        		Americas - 0
          FDMS2510SDCFairchild Semiconductor CorporationPower Field-Effect Transistor, 28A I(D), 25V, 0.0029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
          RoHS: Compliant          		18969
          • 1000:$1.0000
          • 500:$1.0500
          • 100:$1.1000
          • 25:$1.1400
          • 1:$1.2300
          FDMS2510SDC
          DISTI # 512-FDMS2510SDC          		ON SemiconductorMOSFET 20V N-Chan Dual Cool PowerTrench SyncFET
          RoHS: Compliant          		0
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            		 全新原装
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            		 RES 0.005 OHM 1% 1W 1206
            SI53340-B-GM

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            OMO.#: OMO-SI53340-B-GM-SILICON-LABS

            		 Clock Drivers & Distribution LVDS buffer inpt mux footprint compatible
            可用性
            库存:
            Available
            订购:
            5000
            输入数量:
            FDMS2510SDC的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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