SIS330DN-T1-GE3

SIS330DN-T1-GE3
Mfr. #:
SIS330DN-T1-GE3
制造商:
Vishay / Siliconix
描述:
MOSFET RECOMMENDED ALT 78-SISA14DN-T1-GE3
生命周期:
制造商新产品。
数据表:
SIS330DN-T1-GE3 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商:
威世
产品分类:
MOSFET
RoHS:
E
技术:
安装方式:
贴片/贴片
包装/案例:
PowerPAK-1212-8
商品名:
TrenchFET、PowerPAK
打包:
卷轴
高度:
1.04 mm
长度:
3.3 mm
系列:
情报局
宽度:
3.3 mm
品牌:
威世 / Siliconix
产品类别:
MOSFET
出厂包装数量:
3000
子类别:
MOSFET
第 # 部分别名:
SIS330DN-GE3
单位重量:
0.017637 oz
Tags
SIS330D, SIS330, SIS33, SIS3, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SIS330DN-T1-GE3 N-channel MOSFET Transistor; 19 A; 30 V; 8-Pin PowePAK 1212
***et
Trans MOSFET N-CH 30V 19.1A 8-Pin PowerPAK 1212 T/R
***nell
MOSFET, N CH, 30V, 35A, PPK 1212; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0045ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:52W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
型号 制造商 描述 库存 价格
SIS330DN-T1-GE3
DISTI # SIS330DN-T1-GE3-ND
Vishay SiliconixMOSFET N-CH 30V 35A 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    SIS330DN-T1-GE3
    DISTI # 70616569
    Vishay SiliconixSIS330DN-T1-GE3 N-channel MOSFET Transistor,19 A,30 V,8-Pin PowePAK 1212
    RoHS: Compliant
    0
    • 300:$0.5700
    • 600:$0.5600
    • 1500:$0.5500
    • 3000:$0.5400
    SIS330DN-T1-GE3
    DISTI # 78-SIS330DN-T1-GE3
    Vishay IntertechnologiesMOSFET 30 Volts 35 Amps 52 Watts
    RoHS: Compliant
    0
      SIS330DN-T1-GE3
      DISTI # 2056700
      Vishay IntertechnologiesMOSFET, N CH, 30V, 35A, PPK 1212
      RoHS: Compliant
      100
      • 1:$0.9650
      SIS330DN-T1-GE3
      DISTI # 2056700
      Vishay IntertechnologiesMOSFET, N CH, 30V, 35A, PPK 1212
      RoHS: Compliant
      0
      • 5:£0.5360
      • 25:£0.4560
      • 100:£0.4020
      • 250:£0.3960
      • 500:£0.3890
      图片 型号 描述
      SIS330DN-T1-GE3

      Mfr.#: SIS330DN-T1-GE3

      OMO.#: OMO-SIS330DN-T1-GE3

      MOSFET RECOMMENDED ALT 78-SISA14DN-T1-GE3
      SIS330DN-T1-GE3

      Mfr.#: SIS330DN-T1-GE3

      OMO.#: OMO-SIS330DN-T1-GE3-VISHAY

      RF Bipolar Transistors MOSFET 30 Volts 35 Amps 52 Watts
      SIS330DN

      Mfr.#: SIS330DN

      OMO.#: OMO-SIS330DN-1190

      全新原装
      SIS330DN-T1-E3

      Mfr.#: SIS330DN-T1-E3

      OMO.#: OMO-SIS330DN-T1-E3-1190

      全新原装
      可用性
      库存:
      Available
      订购:
      1000
      输入数量:
      SIS330DN-T1-GE3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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