TGF2819-FL

TGF2819-FL
Mfr. #:
TGF2819-FL
制造商:
Qorvo
描述:
RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
生命周期:
制造商新产品。
数据表:
TGF2819-FL 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
TGF2819-FL 更多信息
产品属性
属性值
制造商
TriQuint (Qorvo)
产品分类
晶体管 - FET、MOSFET - 单
打包
托盘
部分别名
1118709 772-TGF2819-FS-EVB1
安装方式
拧紧
工作温度范围
- 40 C to + 85 C
技术
氮化镓碳化硅
配置
单身的
晶体管型
HEMT
获得
14 dB
输出功率
100 W
钯功耗
86 W
最高工作温度
+ 85 C
最低工作温度
- 40 C
工作频率
3.5 GHz
Id 连续漏极电流
7.32 A
Vds-漏-源-击穿电压
32 V
晶体管极性
N通道
开发套件
TGF2819-FS/FL EVAL BOARD
VGS-栅极-源极击穿电压
- 2.9 V
最大漏栅电压
145 V
Tags
TGF281, TGF28, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TGF2819-FS/FL RF Power Transistors
Qorvot TGF2819-FS/FL RF Power Transistors provide a greater-than 100W Peak (20W Avg.) (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5GHz. Designed using TriQuint's proven TQGaN25HV process, the TGF2819-FS/FL RF Power Transistors offer advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. The optimization features provided by TGF2819-FS/FL may potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Qorvo TGF2819-FS/FL RF Power Transistors are ideal for military radar, civilian radar, professional & military radio communications, test instrumentation, wideband or narrowband amplifiers, and jammers.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
型号 制造商 描述 库存 价格
TGF2819-FL
DISTI # 772-TGF2819-FL
QorvoRF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
RoHS: Compliant
1
  • 1:$375.0000
TGF2819-FLPCB4B01
DISTI # 772-TGF2819FLPCB4B01
QorvoRF Development Tools
RoHS: Compliant
0
  • 1:$1,050.0000
图片 型号 描述
TGF2819-FL

Mfr.#: TGF2819-FL

OMO.#: OMO-TGF2819-FL

RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
TGF2819-FS

Mfr.#: TGF2819-FS

OMO.#: OMO-TGF2819-FS

RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
TGF280L

Mfr.#: TGF280L

OMO.#: OMO-TGF280L

Thermal Interface Products Thermal Gap Fill Pad
TGF2819-FS

Mfr.#: TGF2819-FS

OMO.#: OMO-TGF2819-FS-318

RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
TGF2819-FL

Mfr.#: TGF2819-FL

OMO.#: OMO-TGF2819-FL-318

RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
TGF2819-FS-EVB1

Mfr.#: TGF2819-FS-EVB1

OMO.#: OMO-TGF2819-FS-EVB1-1152

RF Development Tools DC-3.5GHz 32V GaN Eval Board
TGF2819-FLPCB4B01

Mfr.#: TGF2819-FLPCB4B01

OMO.#: OMO-TGF2819-FLPCB4B01-1152

RF Development Tools
TGF280L

Mfr.#: TGF280L

OMO.#: OMO-TGF280L-LEADER-TECH

全新原装
可用性
库存:
Available
订购:
1000
输入数量:
TGF2819-FL的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$562.50
US$562.50
10
US$534.38
US$5 343.75
100
US$506.25
US$50 625.00
500
US$478.12
US$239 062.50
1000
US$450.00
US$450 000.00
从...开始
Top