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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| SI4200DY-T1-GE3 DISTI # V72:2272_07435289 | Vishay Intertechnologies | Trans MOSFET N-CH 25V 7.3A 8-Pin SOIC N T/R RoHS: Compliant | 2500 |
|
| SI4200DY-T1-GE3 DISTI # SI4200DY-T1-GE3TR-ND | Vishay Siliconix | MOSFET 2N-CH 25V 8A 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | 2500In Stock |
|
| SI4200DY-T1-GE3 DISTI # SI4200DY-T1-GE3CT-ND | Vishay Siliconix | MOSFET 2N-CH 25V 8A 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 2500In Stock |
|
| SI4200DY-T1-GE3 DISTI # SI4200DY-T1-GE3DKR-ND | Vishay Siliconix | MOSFET 2N-CH 25V 8A 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 2500In Stock |
|
| SI4200DY-T1-GE3 DISTI # 32318845 | Vishay Intertechnologies | Trans MOSFET N-CH 25V 7.3A 8-Pin SOIC N T/R RoHS: Compliant | 2500 |
|
| SI4200DY-T1-GE3. DISTI # 23AC9597 | Vishay Intertechnologies | Transistor Polarity:Dual N Channel,Continuous Drain Current Id:7.3A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.02ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power Dissipation Pd:2.8W,No. of Pins:8PinsRoHS Compliant: No | 0 | |
| SI4200DY-T1-GE3 DISTI # 78-SI4200DY-T1-GE3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI4214DDY-GE3 RoHS: Compliant | 2553 |
|
| 图片 | 型号 | 描述 |
|---|---|---|
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Mfr.#: SI4200DB-BM OMO.#: OMO-SI4200DB-BM-1190 |
全新原装 |
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Mfr.#: SI4200DB-BMR OMO.#: OMO-SI4200DB-BMR-1190 |
全新原装 |
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Mfr.#: SI4200DY OMO.#: OMO-SI4200DY-1190 |
全新原装 |
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Mfr.#: SI4200DY-T1 OMO.#: OMO-SI4200DY-T1-1190 |
全新原装 |
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Mfr.#: SI4200DY-T1-E3 OMO.#: OMO-SI4200DY-T1-E3-1190 |
全新原装 |
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Mfr.#: SI4200DY-T1-GE3 OMO.#: OMO-SI4200DY-T1-GE3-VISHAY |
MOSFET 2N-CH 25V 8A 8SOIC |