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IRF6710S2TRPBF

IRF6710S2TRPBF
Mfr. #:
IRF6710S2TRPBF
制造商:
Infineon / IR
描述:
MOSFET 25V 1 N-CH HEXFET 5.9mOhms 8.8nC
生命周期:
制造商新产品。
数据表:
IRF6710S2TRPBF 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
产品属性
属性值
制造商：
英飞凌
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
DirectFET-S1
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
25 V
Id - 连续漏极电流：
37 A
Rds On - 漏源电阻：
5.9 mOhms
Vgs th - 栅源阈值电压：
1.8 V
Vgs - 栅源电压：
20 V
Qg - 门电荷：
8.8 nC
最低工作温度：
- 55 C
最高工作温度：
+ 175 C
Pd - 功耗：
15 W
配置：
单身的
打包：
卷轴
高度：
0.74 mm
长度：
4.85 mm
晶体管类型：
1 N-Channel
宽度：
3.95 mm
品牌：
英飞凌/红外
正向跨导 - 最小值：
21 S
秋季时间：
6 ns
产品类别：
MOSFET
上升时间：
20 ns
出厂包装数量：
4800
子类别：
MOSFET
典型关断延迟时间：
5.2 ns
典型的开启延迟时间：
7.9 ns
第 # 部分别名：
SP001524736
Tags
IRF6710, IRF671, IRF67, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 25V 12A 6-Pin Direct-FET S1 T/R
***ernational Rectifier
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 12 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ark
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:12mA; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):0.0045ohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:1.8V ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; 100% Rg tested; Low Profile (less than 0.7 mm); Dual Sided Cooling; Optimized for Control FET Applications; Optimized for High Frequency Switching; Low Package Inductance | Target Applications: MultiPhase ControlFET
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SIR436DP-T1-GE3 N-channel MOSFET Transistor; 25 A; 25 V; 8-Pin PowerPAK SO
***et
Trans MOSFET N-CH 25V 25A 8-Pin PowerPAK SO T/R
***S
French Electronic Distributor since 1988
***ure Electronics
BSZ0506NS Series 30 V 40 A 4.4 mOhm OptiMOS™5 Power-MOSFET - TSDSON-8 FL
***el Electronic
In a Pack of 10, N-Channel MOSFET, 40 A, 30 V, 8-Pin TSDSON Infineon BSZ0506NSATMA1
***nell
MOSFET, N-CH, 30V, 40A, TSDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0035ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 27W; Transistor Case Style: TSDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon SCT
With the OptiMOS™ 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation, PG-TSDSON-8, RoHS
***ineon
With the new OptiMOS 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation. | Summary of Features: Best-in-class on-state resistance; Benchmark switching performance (lowest figure of merits R on x Q g and R on x Q gd); RoHS compliant and halogen free; Optimized EMI behavior (integrated damping network) | Benefits: Highest efficiency; Highest power density with S3O8 or Power Block package; Reduction of overall system costs; Operation at high-switching frequency | Target Applications: Desktop and server; Single-phase and multiphase POL; CPU/GPU VR in notebooks; High power density voltage regulator; Or-ing; E-fuse
***ical
Trans MOSFET N-CH 30V 40A 8-Pin QFN EP T/R
***peria
PSMN5R8-30LL - N-channel DFN3333-8 30 V 5.8 mΩ logic level MOSFET
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***ark
MOSFET, N CH, 30V, 40A, 8-QFN3333; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V ;RoHS Compliant: Yes
***p One Stop Global
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***icroelectronics
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***emi
PowerTrench® MOSFET, N-Channel, 25V, 35A, 5.7mΩ
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***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(on) and fast switching speed.
***Yang
Transistor MOSFET Array Dual N-Channel 25V 15A/26A 8-Pin PQFN T/R - Tape and Reel
***emi
Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 25V
***ical
Trans MOSFET N-CH Si 25V 15A/26A 8-Pin Power 56 EP T/R
***rchild Semiconductor
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
型号 制造商 描述 库存 价格
IRF6710S2TRPBF
DISTI # V72:2272_13890391		Infineon Technologies AGTrans MOSFET N-CH Si 25V 12A 6-Pin Direct-FET S1 T/R
RoHS: Compliant		2322
  • 75000:$0.7810
  • 30000:$0.7879
  • 15000:$0.7947
  • 6000:$0.8018
  • 3000:$0.8909
  • 1000:$0.9898
  • 500:$0.9932
  • 250:$1.0863
  • 100:$1.1822
  • 50:$1.2511
  • 25:$1.4123
  • 10:$1.4597
  • 1:$1.6155
IRF6710S2TRPBF
DISTI # IRF6710S2TRPBF-ND		Infineon Technologies AGMOSFET N-CH 25V 12A DIRECTFET
RoHS: Compliant
Min Qty: 4800
Container: Tape & Reel (TR)		Limited Supply - Call
    IRF6710S2TRPBF
    DISTI # 26196267    		Infineon Technologies AGTrans MOSFET N-CH Si 25V 12A 6-Pin Direct-FET S1 T/R
    RoHS: Compliant    		2322
    • 1000:$0.8985
    • 500:$0.9983
    • 250:$1.1499
    • 100:$1.1813
    • 50:$1.2483
    • 25:$1.4096
    • 10:$1.4562
    • 8:$1.6133
    IRF6710S2TRPBF
    DISTI # IRF6710S2TRPBF    		Infineon Technologies AGTrans MOSFET N-CH 25V 12A 6-Pin Direct-FET S1 T/R (Alt: IRF6710S2TRPBF)
    RoHS: Compliant
    Min Qty: 4800
    Container: Tape and Reel    		Asia - 0
      IRF6710S2TRPBF
      DISTI # 70019595      		Infineon Technologies AGMOSFET,25V,12.000A,DIRECTFET
      RoHS: Compliant      		0
      • 4800:$0.9310
      • 9600:$0.9120
      • 24000:$0.8840
      IRF6710S2TRPBF
      DISTI # 942-IRF6710S2TRPBF      		Infineon Technologies AGMOSFET 25V 1 N-CH HEXFET 5.9mOhms 8.8nC
      RoHS: Compliant      		164
      • 1:$1.9400
      • 10:$1.6500
      • 100:$1.3200
      • 500:$1.1500
      • 1000:$0.9570
      • 2500:$0.8880
      • 4800:$0.8550
      • 9600:$0.7900
      IRF6710S2TRPBF
      DISTI # C1S322000592281      		Infineon Technologies AGMOSFETs
      RoHS: Compliant      		2322
      • 100:$1.1842
      • 50:$1.2509
      • 25:$1.4241
      • 10:$1.4701
      图片 型号 描述
      DF04S

      Mfr.#: DF04S

      OMO.#: OMO-DF04S

      		 Bridge Rectifiers 1.5A Bridge
      IRLML2502TRPBF

      Mfr.#: IRLML2502TRPBF

      OMO.#: OMO-IRLML2502TRPBF

      		 MOSFET MOSFT 20V 4.2A 45mOhm 8nC Log Lvl
      IRLML2502TRPBF

      Mfr.#: IRLML2502TRPBF

      OMO.#: OMO-IRLML2502TRPBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 20V 4.2A SOT-23
      DF04S

      Mfr.#: DF04S

      OMO.#: OMO-DF04S-ON-SEMICONDUCTOR

      		 BRIDGE RECT 1PHASE 400V 1A DFS
      可用性
      库存:
      104
      订购:
      2087
      输入数量:
      IRF6710S2TRPBF的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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