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IPW60R031CFD7XKSA1

IPW60R031CFD7XKSA1
Mfr. #:
IPW60R031CFD7XKSA1
制造商:
Infineon Technologies
描述:
MOSFET N-CH 600V TO247-3
生命周期:
制造商新产品。
数据表:
IPW60R031CFD7XKSA1 数据表
交货:
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ECAD Model:
更多信息:
IPW60R031CFD7XKSA1 更多信息
产品属性
属性值
Tags
IPW60R03, IPW60R0, IPW60, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
CoolMOS CFD7 Power Transistor High Power 31mΩ 278W 600V PG-TO 247-3
***ark
Mosfet, N-Ch, 600V, 63A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:63A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.026Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipationrohs Compliant: Yes
***ineon
Summary of Features: Ultra-fast body diode; Best-in-class reverse recovery charge (Qrr); Improved reverse diode dv/dt and dif/dt ruggedness; Lowest FOM RDS(on) x Qg and Eoss; Best-in-class RDS(on)/package combinations | Benefits: Best-in-class hard commutation ruggedness; Highest reliability for resonant topologies; Highest efficiency with outstanding ease-of-use/performance trade-off; Enabling increased power density solutions | Target Applications: Target Applications:
CFD7 CoolMOS™ MOSFETs
Infineon Technologies CFD7 CoolMOS™ MOSFETs are ideal for resonant high power topologies and feature high voltage superjunction MOSFET technology. The MOSFETs have an integrated fast body diode and completes the CoolMOS 7 series. Typical high power SMPS applications include server, telecom and EV charging stations.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
型号 制造商 描述 库存 价格
IPW60R031CFD7XKSA1
DISTI # 33792058		Infineon Technologies AGHIGH POWER_NEW240
  • 2:$7.6931
IPW60R031CFD7XKSA1
DISTI # IPW60R031CFD7XKSA1-ND		Infineon Technologies AGMOSFET N-CH 600V TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		230In Stock
  • 720:$9.3515
  • 240:$10.5124
  • 25:$11.9312
  • 10:$12.4470
  • 1:$13.5400
IPW60R031CFD7XKSA1
DISTI # V99:2348_18786388		Infineon Technologies AGHIGH POWER_NEW0
  • 240000:$7.6910
  • 120000:$7.6960
  • 24000:$8.4100
  • 2400:$9.8900
  • 240:$10.1500
IPW60R031CFD7XKSA1
DISTI # V36:1790_18786388		Infineon Technologies AGHIGH POWER_NEW0
  • 240000:$7.1550
  • 120000:$7.1600
  • 24000:$8.0130
  • 2400:$9.8280
  • 240:$10.1500
IPW60R031CFD7XKSA1
DISTI # IPW60R031CFD7XKSA1		Infineon Technologies AGCoolMOS CFD7 Power Transistor High Power 31mΩ 278W 600V PG-TO 247-3 - Bulk (Alt: IPW60R031CFD7XKSA1)
Min Qty: 45
Container: Bulk		Americas - 0
  • 450:$7.0900
  • 225:$7.1900
  • 135:$7.4900
  • 90:$7.7900
  • 45:$7.9900
IPW60R031CFD7XKSA1
DISTI # IPW60R031CFD7XKSA1		Infineon Technologies AGCoolMOS CFD7 Power Transistor High Power 31mΩ 278W 600V PG-TO 247-3 - Rail/Tube (Alt: IPW60R031CFD7XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 2400:$7.7900
  • 1440:$7.8900
  • 960:$8.1900
  • 480:$8.4900
  • 240:$8.7900
IPW60R031CFD7XKSA1
DISTI # SP001617992		Infineon Technologies AGCoolMOS CFD7 Power Transistor High Power 31mΩ 278W 600V PG-TO 247-3 (Alt: SP001617992)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€6.7900
  • 500:€7.2900
  • 100:€7.4900
  • 50:€7.7900
  • 25:€8.0900
  • 10:€8.4900
  • 1:€9.1900
IPW60R031CFD7XKSA1
DISTI # 43AC9329		Infineon Technologies AGCoolMOS CFD7 Power Transistor High Power 31mΩ 278W 600V PG-TO 247-3 - Bulk (Alt: 43AC9329)
RoHS: Compliant
Min Qty: 1
Container: Bulk		Americas - 0
    IPW60R031CFD7XKSA1
    DISTI # 43AC9329    		Infineon Technologies AGMOSFET, N-CH, 600V, 63A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:63A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.026ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes20
    • 500:$9.8900
    • 250:$10.5800
    • 100:$11.1200
    • 50:$11.8700
    • 25:$12.6200
    • 10:$13.1700
    • 1:$14.3200
    IPW60R031CFD7XKSA1
    DISTI # 726-IPW60R031CFD7XKS    		Infineon Technologies AGMOSFET HIGH POWER_NEW
    RoHS: Compliant    		1995
    • 1:$12.8900
    • 10:$11.8500
    • 25:$11.3600
    • 100:$10.0100
    • 250:$9.5200
    • 500:$8.9000
    IPW60R031CFD7XKSA1Infineon Technologies AGPower Field-Effect Transistor, 63A I(D), 600V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
    RoHS: Compliant    		1
    • 1000:$7.4000
    • 500:$7.7800
    • 100:$8.1000
    • 25:$8.4500
    • 1:$9.1000
    IPW60R031CFD7XKSA1
    DISTI # 2807984    		Infineon Technologies AGMOSFET, N-CH, 600V, 63A, TO-2471596
    • 100:£7.7200
    • 50:£8.2400
    • 10:£8.7600
    • 5:£9.9400
    • 1:£10.4500
    IPW60R031CFD7XKSA1
    DISTI # 2807984    		Infineon Technologies AGMOSFET, N-CH, 600V, 63A, TO-247
    RoHS: Compliant    		1338
    • 720:$14.1000
    • 240:$15.8500
    • 25:$17.9900
    • 10:$18.7600
    • 1:$20.4000
    图片 型号 描述
    IPW60R031CFD7XKSA1

    Mfr.#: IPW60R031CFD7XKSA1

    OMO.#: OMO-IPW60R031CFD7XKSA1

    		 MOSFET HIGH POWER_NEW
    IPW60R031CFD7XKSA1

    Mfr.#: IPW60R031CFD7XKSA1

    OMO.#: OMO-IPW60R031CFD7XKSA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 600V TO247-3
    可用性
    库存:
    Available
    订购:
    1500
    输入数量:
    IPW60R031CFD7XKSA1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$0.00
    US$0.00
    10
    US$0.00
    US$0.00
    100
    US$0.00
    US$0.00
    500
    US$0.00
    US$0.00
    1000
    US$0.00
    US$0.00
    由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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