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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| STW6NA80 | STMicroelectronics | Power Field-Effect Transistor, 5.4A I(D), 800V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 RoHS: Not Compliant | Europe - 38 |
| 图片 | 型号 | 描述 |
|---|---|---|
|
Mfr.#: STW65N60DM6 OMO.#: OMO-STW65N60DM6 |
MOSFET N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power MOSFET in a TO-247 package |
|
Mfr.#: STW62N65M5 OMO.#: OMO-STW62N65M5 |
MOSFET N-Ch 650V 46A Auto 0.041 Ohm MDMesh M5 |
|
|
Mfr.#: STW60NM50N OMO.#: OMO-STW60NM50N |
MOSFET N-Ch 500V 0.035 Ohm 68A MDmesh II FET |
|
Mfr.#: STW60N65M5 |
IGBT Transistors MOSFET N-Ch 650V 0.049 Ohm 46A Mdmesh V |
|
Mfr.#: STW68N60M6 |
N-CHANNEL 600V M6 POWER MOSFET |
|
|
Mfr.#: STW60NE10 |
MOSFET N-CH 100V 60A TO-247 |
|
Mfr.#: STW60NE10,W60NE10 OMO.#: OMO-STW60NE10-W60NE10-1190 |
全新原装 |
|
|
Mfr.#: STW65N65DM2AG |
MOSFET N-CH 650V 60A |
|
|
Mfr.#: STW6NA80 OMO.#: OMO-STW6NA80-1190 |
Power Field-Effect Transistor, 5.4A I(D), 800V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 |
|
|
Mfr.#: STW6NA90 OMO.#: OMO-STW6NA90-1190 |
全新原装 |