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NDB6060L

NDB6060L
Mfr. #:
NDB6060L
制造商:
ON Semiconductor / Fairchild
描述:
MOSFET N-Ch LL FET Enhancement Mode
生命周期:
制造商新产品。
数据表:
NDB6060L 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商：
安森美半导体
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
TO-263-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
60 V
Id - 连续漏极电流：
48 A
Rds On - 漏源电阻：
20 mOhms
Vgs - 栅源电压：
16 V
最低工作温度：
- 65 C
最高工作温度：
+ 175 C
Pd - 功耗：
100 W
配置：
单身的
频道模式：
增强
打包：
卷轴
高度：
4.83 mm
长度：
10.67 mm
系列：
NDB6060L
晶体管类型：
1 N-Channel
宽度：
9.65 mm
品牌：
安森美半导体/飞兆半导体
秋季时间：
161 ns
产品类别：
MOSFET
上升时间：
320 ns
出厂包装数量：
800
子类别：
MOSFET
典型关断延迟时间：
49 ns
典型的开启延迟时间：
15 ns
第 # 部分别名：
NDB6060L_NL
单位重量：
0.046296 oz
Tags
NDB6060, NDB606, NDB60, NDB6, NDB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Logic Level Enhancement Mode Field Effect Transistor 60V, 48A, 25mΩ
***ure Electronics
N-Channel 60 V 0.025 Ohm SMD Enhancement Mode Transistor - TO-263AB
***p One Stop Global
Trans MOSFET N-CH 60V 48A 3-Pin(2+Tab) D2PAK T/R
***o-Tech
MOSFET, N, D2-PAK 60V N-CH. FET, 20 MO, TO263 <AZ
***ark
60V N-Fet 20 Mo To263 Rohs Compliant: Yes
***th Star Micro
MOSFET N-CH 60V 48A TO-263AB
***eco
IC,NDB6060L,60V N-CH. FET, 20 MO, TO263 <AZ
***ser
MOSFETs N-Ch LL FET Enhancement Mode
***Components
ON Semiconductor, NDB6060L
***et
60V N-CH. FET, 20 MO, TO263
***nell
MOSFET, N, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:48A; Resistance, Rds On:0.025ohm; Voltage, Vgs Rds on Measurement:5V; Voltage, Vgs th Typ:2V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:D2-PAK; Current, Idm Pulse:144A; Power Dissipation:100W; Power, Pd:100W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Typ Capacitance Ciss:1630pF; Voltage, Vds Max:60V; Voltage, Vgs th Max:2V; Voltage, Vgs th Min:1V
***rchild Semiconductor
These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
***ment14 APAC
MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:60V; On Resistance Rds(on):25mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:100W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Capacitance Ciss Typ:1630pF; Current Id Max:48A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:D2-PAK; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulse Current Idm:144A; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V; Voltage Vgs th Min:1V
型号 制造商 描述 库存 价格
NDB6060L
DISTI # NDB6060LCT-ND		ON SemiconductorMOSFET N-CH 60V 48A TO-263AB
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		6In Stock
  • 100:$1.8123
  • 10:$2.2550
  • 1:$2.5000
NDB6060L
DISTI # NDB6060LDKR-ND		ON SemiconductorMOSFET N-CH 60V 48A TO-263AB
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		6In Stock
  • 100:$1.8123
  • 10:$2.2550
  • 1:$2.5000
NDB6060L
DISTI # NDB6060LTR-ND		ON SemiconductorMOSFET N-CH 60V 48A TO-263AB
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		On Order
  • 800:$1.2355
NDB6060L
DISTI # NDB6060L		ON SemiconductorTrans MOSFET N-CH 60V 48A 3-Pin(2+Tab) D2PAK T/R - Cut TR (SOS) (Alt: NDB6060L)
RoHS: Compliant
Min Qty: 1
Container: Cut Tape		Americas - 74
  • 1:$1.7900
  • 8:$1.5900
  • 20:$1.5900
  • 40:$1.5900
  • 100:$1.1900
  • 200:$1.1900
  • 400:$1.0900
NDB6060L
DISTI # NDB6060L		ON SemiconductorTrans MOSFET N-CH 60V 48A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: NDB6060L)
RoHS: Compliant
Min Qty: 800
Container: Reel		Americas - 0
  • 800:$0.8079
  • 1600:$0.8019
  • 3200:$0.7919
  • 4800:$0.7819
  • 8000:$0.7629
NDB6060LON SemiconductorTrans MOSFET N-CH 60V 48A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
RoHS: Compliant
Container: Reel		Americas - 0
    NDB6060L
    DISTI # 26M1835    		ON SemiconductorMOSFET Transistor, N Channel, 48 A, 60 V, 0.02 ohm, 10 V, 2 V RoHS Compliant: Yes1701
    • 1:$2.1000
    • 10:$1.7800
    • 25:$1.6600
    • 50:$1.5500
    • 100:$1.4300
    • 250:$1.3400
    • 500:$1.2500
    NDB6060L
    DISTI # 29X6825    		ON SemiconductorMOSFET, N CHANNEL, 60V, 48A, TO-263AB-3,Transistor Polarity:N Channel,Continuous Drain Current Id:48A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.02ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes0
    • 1:$1.2500
    • 800:$1.2500
    NDB6060LFairchild Semiconductor CorporationPower Field-Effect Transistor, 48A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant    		9162
    • 1000:$1.3600
    • 500:$1.4300
    • 100:$1.4900
    • 25:$1.5500
    • 1:$1.6700
    NDB6060L
    DISTI # 512-NDB6060L    		ON SemiconductorMOSFET N-Ch LL FET Enhancement Mode
    RoHS: Compliant    		0
    • 1:$2.1000
    • 10:$1.7800
    • 100:$1.4300
    • 500:$1.2500
    NDB6060L_Q
    DISTI # 512-NDB6060L_Q    		ON SemiconductorMOSFET N-Ch LL FET Enhancement Mode
    RoHS: Not compliant    		0
      NDB6060LFairchild Semiconductor Corporation 270
        NDB6060LFairchild Semiconductor Corporation 84
        • 3:$1.6875
        • 13:$1.0969
        • 47:$0.6328
        NDB6060LFairchild Semiconductor CorporationMOSFET Transistor, N-Channel, TO-263AB149
        • 55:$0.9345
        • 14:$1.1214
        • 1:$1.8690
        NDB6060LFairchild Semiconductor CorporationMOSFET Transistor, N-Channel, TO-263AB12
        • 12:$1.3200
        • 3:$1.7600
        • 1:$2.2000
        NDB6060LFreescale SemiconductorMOSFET Transistor, N-Channel, TO-263AB21
        • 12:$1.1250
        • 3:$1.8000
        • 1:$2.2500
        NDB6060LUnknownMOSFET Transistor, N-Channel, TO-263AB1080
        • 971:$1.8750
        • 433:$2.0625
        • 1:$3.7500
        NDB6060LFairchild Semiconductor CorporationMOSFET Transistor, N-Channel, TO-263AB1
        • 1:$4.5000
        NDB6060L  1559
          NDB6060L
          DISTI # 1017723          		ON SemiconductorMOSFET, N, D2-PAK
          RoHS: Compliant          		1696
          • 1:£2.0200
          • 10:£1.4500
          • 100:£1.1600
          • 250:£0.9980
          • 500:£0.8390
          NDB6060L
          DISTI # 1017723          		ON SemiconductorMOSFET, N, D2-PAK
          RoHS: Compliant          		1701
          • 1:$3.3200
          • 10:$2.8200
          • 100:$2.2700
          • 500:$1.9800
          • 800:$1.6500
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          可用性
          库存:
          Available
          订购:
          1987
          输入数量:
          NDB6060L的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
          参考价格（美元）
          数量
          单价
          小计金额
          1
          US$2.09
          US$2.09
          10
          US$1.77
          US$17.70
          100
          US$1.42
          US$142.00
          500
          US$1.24
          US$620.00
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