NTJD4105CT2G

Mfr. #:: NTJD4105CT2G
制造商:: ON Semiconductor
描述:: MOSFET N/P-CH 20V/8V SOT-363
生命周期:: 制造商新产品。
数据表:: NTJD4105CT2G 数据表
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产品属性
属性值

制造商: 安森美半导体

产品分类: FET - 阵列

系列: NTJD4105C

打包: Digi-ReelR 替代包装

单位重量: 0.000265 oz

安装方式: 贴片/贴片

包装盒: 6-TSSOP, SC-88, SOT-363

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 2 Channel

供应商-设备-包: SC-88/SC70-6/SOT-363

配置: N 沟道 P 沟道

FET型: N 和 P 沟道

最大功率: 270mW

晶体管型: 1 N-Channel 1 P-Channel

漏源电压 Vdss: 20V, 8V

输入电容-Ciss-Vds: 46pF @ 20V

FET-Feature: 逻辑电平门

Current-Continuous-Drain-Id-25°C: 630mA, 775mA

Rds-On-Max-Id-Vgs: 375 mOhm @ 630mA, 4.5V

Vgs-th-Max-Id: 1.5V @ 250μA

栅极电荷-Qg-Vgs: 3nC @ 4.5V

钯功耗: 270 mW

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 506 nS 36 nS

上升时间: 227 nS 23 nS

VGS-栅极-源极-电压: 12 V 8 V

Id 连续漏极电流: 630 mA - 775 mA

Vds-漏-源-击穿电压: 27 V - 10.5 V

VGS-th-Gate-Source-Threshold-Voltage: 0.92 V - 0.83 V

Rds-On-Drain-Source-Resistance: 290 mOhms 220 mOhms

晶体管极性: N 沟道 P 沟道

典型关断延迟时间: 786 ns 50 ns

典型开启延迟时间: 83 ns 13 ns

Qg-门电荷: 1.3 nC 2.2 nC

正向跨导最小值: 2 S

通道模式: 增强

Tags: NTJD4105, NTJD410, NTJD41, NTJD4, NTJD, NTJ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NTJD4105CT2G 描述

***ure Electronics: N-Channel 20/8 V 290/220 mOhm 270 mW Surface Mount Small Signal MOSFET SOT-363

***p One Stop Global: Trans MOSFET N/P-CH 20V/8V 0.63A/0.775A 6-Pin SC-88 T/R

***ical: Trans MOSFET N/P-CH 20V/8V 0.91A/1.1A 6-Pin SC-88 T/R

***Semiconductor: Complementary Small Signal MOSFET

***ser: MOSFETs- Power and Small Signal 20V/-8V 0.63A/-.775A Complementary

***ment14 APAC: MOSFET, N & P-CH, 20V, 0.63A, SOT-363

*** Source Electronics: MOSFET N/P-CH 20V/8V SOT-363

***ark: Dual N/p Ch Mosfet, 20V, Sot-363; Continuous Drain Current Id:910Ma; Continuous Drain Current Id, N Channel:630Ma; Continuous Drain Current Id, P Channel:-775Ma; Drain Source Voltage Vds:20V; Drain Source Voltage Vds, N Channel:20V Rohs Compliant: Yes

Market price

型号	制造商	描述	库存	价格
NTJD4105CT2G DISTI # NTJD4105CT2GOSTR-ND	ON Semiconductor	MOSFET N/P-CH 20V/8V SOT-363 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.1173
NTJD4105CT2G DISTI # NTJD4105CT2GOSCT-ND	ON Semiconductor	MOSFET N/P-CH 20V/8V SOT-363 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.1339 500:$0.1730 100:$0.2903 10:$0.4410 1:$0.6200
NTJD4105CT2G DISTI # NTJD4105CT2GOSDKR-ND	ON Semiconductor	MOSFET N/P-CH 20V/8V SOT-363 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.1339 500:$0.1730 100:$0.2903 10:$0.4410 1:$0.6200
NTJD4105CT2G DISTI # NTJD4105CT2G	ON Semiconductor	Trans MOSFET N/P-CH 20V/8V 0.63A/0.775A 6-Pin SC-88 T/R (Alt: NTJD4105CT2G) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 3000	3000:€0.1259 6000:€0.0979 12000:€0.0799 18000:€0.0679 30000:€0.0629
NTJD4105CT2G DISTI # NTJD4105CT2G	ON Semiconductor	Trans MOSFET N/P-CH 20V/8V 0.63A/0.775A 6-Pin SC-88 T/R (Alt: NTJD4105CT2G) RoHS: Compliant Min Qty: 6000 Container: Tape and Reel	Asia - 0	6000:$0.0857 12000:$0.0824 18000:$0.0793 30000:$0.0765 60000:$0.0738 150000:$0.0714 300000:$0.0702
NTJD4105CT2G DISTI # 88H5114	ON Semiconductor	DUAL N/P CH MOSFET, 20V, SOT-363,Continuous Drain Current Id:910mA,Continuous Drain Current Id, N Channel:630mA,Continuous Drain Current Id, P Channel:-775mA,Drain Source Voltage Vds:20V,Drain Source Voltage Vds, N Channel:20V RoHS Compliant: Yes	0	18000:$0.0850 6000:$0.0880 1000:$0.0940 500:$0.1340 250:$0.1380 100:$0.1420 50:$0.2520 1:$0.3780
NTJD4105CT2G DISTI # 13AC3885	ON Semiconductor	MOSFET, N & P-CH, 20V, 0.63A, SOT-363,Transistor Polarity:N and P Channel,Continuous Drain Current Id:630mA,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.29ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1.5V,RoHS Compliant: Yes	29995	1000:$0.1270 500:$0.1400 250:$0.1510 100:$0.1640 50:$0.2260 25:$0.2870 10:$0.3490 1:$0.5010
NTJD4105CT1G DISTI # 863-NTJD4105CT1G	ON Semiconductor	MOSFET 20V/-8V 0.63A/-.775A Complementary RoHS: Compliant	31619	1:$0.4600 10:$0.3260 100:$0.1500 1000:$0.1150 3000:$0.0980 9000:$0.0900 24000:$0.0840
NTJD4105CT2G DISTI # 863-NTJD4105CT2G	ON Semiconductor	MOSFET 20V/-8V 0.63A/-.775A Complementary RoHS: Compliant	17919	1:$0.4600 10:$0.3260 100:$0.1500 1000:$0.1150 3000:$0.0980 9000:$0.0900 24000:$0.0840
NTJD4105CT2G DISTI # 2724456	ON Semiconductor	MOSFET, N & P-CH, 20V, 0.63A, SOT-363 RoHS: Compliant	24000	100:£0.1480 25:£0.3390 5:£0.3540
NTJD4105CT2G DISTI # XSFP00000164272	ON SEMICONDUCTOR	N-Channel 710 V 190 m 36 nCSurfaceMountPowerMosfet - TO-263 (D2PAK) RoHS: Compliant	96000	96000:$0.1605 3000:$0.1766
NTJD4105CT2G DISTI # 2724456	ON Semiconductor	MOSFET, N & P-CH, 20V, 0.63A, SOT-363 RoHS: Compliant	24000	1000:$0.2080 500:$0.2700 100:$0.4570 10:$0.6970 1:$0.9870

图片	型号	描述
	Mfr.#: NTJD4152PT1 OMO.#: OMO-NTJD4152PT1	MOSFET 20V 0.88A P-Channel
	Mfr.#: NTJD4152PT2G OMO.#: OMO-NTJD4152PT2G	MOSFET PFET SC88 20V 88MA 2
	Mfr.#: NTJD4152PT1G OMO.#: OMO-NTJD4152PT1G-ON-SEMICONDUCTOR	MOSFET 2P-CH 20V 0.88A SOT-363
	Mfr.#: NTJD4105CT2G OMO.#: OMO-NTJD4105CT2G-ON-SEMICONDUCTOR	MOSFET N/P-CH 20V/8V SOT-363
	Mfr.#: NTJD4105CT1 OMO.#: OMO-NTJD4105CT1-1190	MOSFET 20V/-8V 0.63A/-.775A
	Mfr.#: NTJD4105CT4G OMO.#: OMO-NTJD4105CT4G-ON-SEMICONDUCTOR	MOSFET N/P-CH 20V/8V SOT-363
	Mfr.#: NTJD4152PT1G , FLZ8V2B OMO.#: OMO-NTJD4152PT1G-FLZ8V2B-1190	全新原装
	Mfr.#: NTJD4158CT1G , MAX6835FX OMO.#: OMO-NTJD4158CT1G-MAX6835FX-1190	全新原装
	Mfr.#: NTJD4105CT1G-CUT TAPE OMO.#: OMO-NTJD4105CT1G-CUT-TAPE-1190	全新原装
	Mfr.#: NTJD4105CT4 OMO.#: OMO-NTJD4105CT4-ON-SEMICONDUCTOR	MOSFET N/P-CH 20V/8V SOT-363

NTJD4105CT2G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes