S29GL01GS11DHA023

S29GL01GS11DHA023
Mfr. #:
S29GL01GS11DHA023
制造商:
Cypress Semiconductor
描述:
NOR Flash Ser NOR Flash Memory 20
生命周期:
制造商新产品。
数据表:
S29GL01GS11DHA023 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
S29GL01GS11DHA023 更多信息 S29GL01GS11DHA023 Product Details
产品属性
属性值
制造商:
赛普拉斯半导体
产品分类:
NOR闪存
RoHS:
Y
安装方式:
贴片/贴片
包装/案例:
LEA-64
系列:
S29GL01G/512/256/128S
内存大小:
1 Gbit
计时类型:
异步
电源电压 - 最小值:
2.7 V
电源电压 - 最大值:
3.6 V
电源电流 - 最大值:
100 uA
最低工作温度:
- 40 C
最高工作温度:
+ 85 C
资质:
AEC-Q100
打包:
卷轴
内存类型:
也不
速度:
110 ns
品牌:
赛普拉斯半导体
产品类别:
NOR闪存
出厂包装数量:
2200
子类别:
内存和数据存储
商品名:
MirrorBit Eclipse
Tags
S29GL01GS11DHA, S29GL01GS11D, S29GL01GS11, S29GL01GS, S29GL01G, S29GL01, S29GL0, S29GL, S29G, S29
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
S29 GL-S MirrorBit® Eclipse™ Flash
Cypress S29 GL-S MirrorBit® Eclipse™ Flash products are fabricated on 65nm process technology. These devices offer a fast page access time - as fast as 15ns with a corresponding random access time as fast as 90ns. MirrorBit® Eclipse™ Flash non-volatile memory is a CMOS 3V core with versatile I/O interface. S29 GL-S MirrorBit® Eclipse™ Flash features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This results in faster effective programming time than standard programming algorithms. Programming time makes the S29 GL-S flash ideal for today's embedded applications that require higher density, better performance, and lower power consumption.
图片 型号 描述
S29GL01GT11FHIV40

Mfr.#: S29GL01GT11FHIV40

OMO.#: OMO-S29GL01GT11FHIV40

NOR Flash Nor
S29GL01GS11FHIV23

Mfr.#: S29GL01GS11FHIV23

OMO.#: OMO-S29GL01GS11FHIV23

NOR Flash Nor
S29GL01GS11FHSS50

Mfr.#: S29GL01GS11FHSS50

OMO.#: OMO-S29GL01GS11FHSS50

NOR Flash Nor
S29GL01GT10DHSS20

Mfr.#: S29GL01GT10DHSS20

OMO.#: OMO-S29GL01GT10DHSS20

NOR Flash NOR
S29GL01GP11FAIR12

Mfr.#: S29GL01GP11FAIR12

OMO.#: OMO-S29GL01GP11FAIR12-CYPRESS-SEMICONDUCTOR

IC FLASH 1G PARALLEL 64BGA GL-P
S29GL01GS11FHV023

Mfr.#: S29GL01GS11FHV023

OMO.#: OMO-S29GL01GS11FHV023-CYPRESS-SEMICONDUCTOR

IC FLASH 1G PARALLEL 64FBGA GL-S
S29GL01GS11DHSS60

Mfr.#: S29GL01GS11DHSS60

OMO.#: OMO-S29GL01GS11DHSS60-CYPRESS-SEMICONDUCTOR

IC FLASH 1G PARALLEL 64BGA GL-S
S29GL01GT11FHV020

Mfr.#: S29GL01GT11FHV020

OMO.#: OMO-S29GL01GT11FHV020-CYPRESS-SEMICONDUCTOR

IC FLASH 1G PARALLEL GL-T
S29GL01GT13TFNV23

Mfr.#: S29GL01GT13TFNV23

OMO.#: OMO-S29GL01GT13TFNV23-CYPRESS-SEMICONDUCTOR

Flash Memory 1 GBIT, 3V, 110NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 45 NM MIRRORBIT PROCESS TECHNOLOGY, HIGHEST ADDRESS SECTOR PROTECTED, VIO
S29GL01GS11FHSS53

Mfr.#: S29GL01GS11FHSS53

OMO.#: OMO-S29GL01GS11FHSS53-CYPRESS-SEMICONDUCTOR

IC FLASH 1G PARALLEL 64BGA GL-S
可用性
库存:
Available
订购:
1500
输入数量:
S29GL01GS11DHA023的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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