TGF3015-SM

Mfr. #:: TGF3015-SM
制造商:: Qorvo
描述:: RF JFET Transistors .03-3GHz Gain 17dB P3dB [email protected] GaN
生命周期:: 制造商新产品。
数据表:: TGF3015-SM 数据表
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ECAD Model:
更多信息:: TGF3015-SM 更多信息

产品属性
属性值

制造商：: 科沃

产品分类：: 射频 JFET 晶体管

RoHS：: Y

晶体管类型：: HEMT

技术：: 氮化镓碳化硅

获得：: 17.1 dB

晶体管极性：: N通道

Vds - 漏源击穿电压：: 32 V

Vgs - 栅源击穿电压：: - 2.7 V

Id - 连续漏极电流：: 557 mA

输出功率：: 11 W

Pd - 功耗：: 15.3 W

安装方式：: 贴片/贴片

包装/案例：: QFN-EP-16

打包：: 托盘

配置：: 单身的

工作频率：: 0.03 GHz to 3 GHz

品牌：: 科沃

开发套件：: TGF3015-SM-EVB1

湿气敏感：: 是的

产品类别：: 射频 JFET 晶体管

出厂包装数量：: 100

子类别：: 晶体管

第 # 部分别名：: 1120419

Tags: TGF30, TGF3, TGF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TGF3015-SM 描述

***W: RF Power Transistor, 0.03- 3 GHz, 10 W, 17.1 dB, 32 V, GaN, Plastic

TGF3015-SM 更多信息

TGF3015-SM GaN HEMT: Qorvo TGF3015-SM is a 10W (P3dB), 50ohm-input matched discrete GaN on SiC HEMT which operates from 30MHz to 3.0GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in an industry-standard 3x3mm package that saves real estate of already space-constrained handheld radios.Learn More

QPD GaN RF Transistors: Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

Market price

型号	制造商	描述	库存	价格
TGF3015-SM DISTI # 772-TGF3015-SM	Qorvo	RF JFET Transistors .03-3GHz Gain 17dB P3dB [email protected] GaN RoHS: Compliant	156	1:$58.0000 25:$51.0000 100:$45.0000
TGF3015-SM-EVB DISTI # 772-TGF3015-SM-EVB	Qorvo	RF Development Tools RoHS: Compliant	0	1:$875.0000

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