APTGT300A120G

APTGT300A120G
Mfr. #:
APTGT300A120G
制造商:
Microchip / Microsemi
描述:
IGBT Modules CC6106
生命周期:
制造商新产品。
数据表:
APTGT300A120G 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APTGT300A120G DatasheetAPTGT300A120G Datasheet (P4-P6)
ECAD Model:
产品属性
属性值
制造商:
微芯片
产品分类:
IGBT 模块
RoHS:
Y
产品:
IGBT 硅模块
配置:
双重的
集电极-发射极电压 VCEO 最大值:
1.2 kV
集电极-发射极饱和电压:
1.7 V
25 C 时的连续集电极电流:
420 A
栅极-发射极漏电流:
600 nA
Pd - 功耗:
1.38 kW
包装/案例:
SP6
最低工作温度:
- 40 C
最高工作温度:
+ 100 C
打包:
管子
品牌:
微芯片/Microsemi
安装方式:
底盘安装
最大栅极发射极电压:
20 V
产品类别:
IGBT 模块
出厂包装数量:
1
子类别:
IGBT
单位重量:
3.880136 oz
Tags
APTGT300A1, APTGT300A, APTGT300, APTGT30, APTGT3, APTGT, APTG, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Stop Electro
Insulated Gate Bipolar Transistor, 420A I(C), 1200V V(BR)CES, N-Channel
***ark
Pm-Igbt-Tfs-Sp6C Sp6C Tube Rohs Compliant: Yes |Microchip APTGT300A120G
***et
Trans IGBT Module N-CH 1.2KV 420A 7-Pin Case SP6
***rochip SCT
High Voltage Power Module, Phase leg, 1200V, RoHS
***el Electronic
IGBT MODULE 1200V 420A 1380W SP6
***i-Key
IGBT MODULE TRENCH PHASE LEG SP6
***el Electronic
Insulated Gate Bipolar Transistor, 420A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
***p One Stop Global
Trans IGBT Module N-CH 1200V 420A 1550000mW 7-Pin 62MM-1 Tray
***trelec
IGBT module Connection: 3 x M6 Fastening: 4 x M6 Configuration: Half-Bridge Housing type: 62 mm Collector-emitter saturation voltage: 2.6 V Energy dissipation during make-time: 22 mJ Energy dissipation during turn-off time: 23 mJ
*** Electronics
IGBT Array & Module Transistor, N Channel, 440 A, 1.7 V, 1.45 kW, 1.2 kV, Module
***ow.cn
Trans IGBT Module N-CH 1200V 440A 1450000mW Automotive 7-Pin 62MM-1 Tray
***ment14 APAC
IGBT MODULE, DUAL, 1200V; Module Configuration:Dual; DC Collector Current:440A; Collector Emitter Voltage Vces:2.15V; Power Dissipation Pd:1.45kW; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +125°C; Transistor Case Style:Econopack 3; No. of Pins:7; SVHC:No SVHC (19-Dec-2011); Alternate Case Style:M62a; Current Ic Continuous a Max:300A; Current Temperature:80°C; Fall Time tf:0.13µs; Package / Case:Econopack 3; Power Dissipation Max:1.45kW; Power Dissipation Pd:1.45kW; Power Dissipation Pd:1.45kW; Pulsed Current Icm:600A; Rise Time:0.09µs; Termination Type:Screw; Voltage Vces:1.2kV
***ineon
Our well-known 62 mm 1200V dual IGBT modules with trench/fieldstop IGBT3 and Emitter Controlled High Efficiency Diode are the right choice for your design. | Summary of Features: Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 125 C (max 150 C); Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: PrimeSTACKs available for fast development with minimum effort; Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding
***el Electronic
Insulated Gate Bipolar Transistor, 550A I(C), 1200V V(BR)CES, N-Channel, MODULE-5
*** Electronic Components
IGBT Modules 1200V 200A SINGLE
***trelec
IGBT module Connection: 2 x M6, 3 x M4 Fastening: 4 x M6 Configuration: Single Housing type: 62 mm Collector-emitter saturation voltage: 3.1 V
***ark
Pm-Igbt-Tfs-Sp6C Sp6C Tube Rohs Compliant: Yes |Microchip APTGL240TL120G
***et
Trans IGBT Module N-CH 1.2KV 305A 12-Pin Case SP6
*** Stop Electro
Insulated Gate Bipolar Transistor, 305A I(C), 1200V V(BR)CES
***rochip SCT
High Voltage Power Module, Three level inverter, 1200V, RoHS
***DA Technology Co., Ltd.
Product Description Demo for Development.
***el Electronic
IGBT MODULE 1200V 305A 1000W SP6
***i-Key
POWER MOD IGBT4 3LVL INVERT SP6
***ical
Trans IGBT Module N-CH 1200V 55A 208000mW 32-Pin Case SP-3 Tube
***ark
Pm-Igbt-Tfs-Sp3F Sp3F Tube Rohs Compliant: Yes |Microchip APTGT35X120T3G
*** Stop Electro
Insulated Gate Bipolar Transistor, 55A I(C), 1200V V(BR)CES, N-Channel
***rochip SCT
High Voltage Power Module, Three Phase bridge, 1200V, RoHS
***i-Key
IGBT MOD TRENCH 3PH BRIDGE SP3
***ical
Trans IGBT Module N-CH 1200V 220A 690000mW 7-Pin Case SP-6 Tube
***ark
Pm-Igbt-Tfs-Sp6C Sp6C Tube Rohs Compliant: Yes |Microchip APTGT150DU120G
*** Stop Electro
Insulated Gate Bipolar Transistor, 220A I(C), 1200V V(BR)CES, N-Channel
***rochip SCT
High Voltage Power Module, Dual common source, 1200V, RoHS
***i-Key
POWER MOD IGBT TRENCH DL SRC SP6
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Mfr.#: APTGT300DA170G

OMO.#: OMO-APTGT300DA170G-MICROSEMI

Trans IGBT Module N-CH 1.7KV 400A 5-Pin Case SP6 - Rail/Tube (Alt: APTGT300DA170G)
可用性
库存:
Available
订购:
2000
输入数量:
APTGT300A120G的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
100
US$196.11
US$19 611.00
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