IRFB61N15DPBF

Mfr. #:: IRFB61N15DPBF
制造商:: Infineon Technologies
描述:: MOSFET 150V 1 N-CH HEXFET 32mOhms 95nC
生命周期:: 制造商新产品。
数据表:: IRFB61N15DPBF 数据表
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ECAD Model:

产品属性
属性值

制造商: IRMEX

产品分类: FET - 单

打包: 管子

单位重量: 0.211644 oz

安装方式: 通孔

包装盒: TO-220-3

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 330 W

最高工作温度: + 175 C

最低工作温度: - 55 C

秋季时间: 51 ns

上升时间: 110 ns

VGS-栅极-源极-电压: 30 V

Id 连续漏极电流: 60 A

Vds-漏-源-击穿电压: 150 V

Rds-On-Drain-Source-Resistance: 32 mOhms

晶体管极性: N通道

典型关断延迟时间: 28 ns

典型开启延迟时间: 18 ns

Qg-门电荷: 95 nC

通道模式: 增强

Tags: IRFB61N15D, IRFB61, IRFB6, IRFB, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFB61N15DPBF 描述

***eco: Transistor MOSFET Negative Channel 150 Volt 60A 3-Pin(3+Tab) TO-220AB

***ure Electronics: Single N-Channel 150 V 0.032 Ohm 140 nC HEXFET® Power Mosfet - TO-220-3

***ernational Rectifier: 150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

***ied Electronics & Automation: MOSFET, 150V, 60A, 32 mOhm, 95 nC Qg, TO-220AB

***ical: Trans MOSFET N-CH 150V 60A 3-Pin(3+Tab) TO-220AB

*** Source Electronics: MOSFET N-CH 150V 60A TO-220AB

***ment14 APAC: MOSFET, N, 150V, 60A, TO-220

***Components: 150V SINGLE N-CHANNEL HEXFET POWER MOSFE

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

***ark: Transistor Polarity:n Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:150V; On Resistance Rds(On):0.032Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power Dissipation Pd:330W; No. Of Pins:3Pins Rohs Compliant: Yes

***nell: MOSFET, N, 150V, 60A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:150V; Current, Id Cont:60A; Resistance, Rds On:0.032ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5.5V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:250A; Power Dissipation:330W; Power, Pd:330W; Resistance, Rds on @ Vgs = 10V:32ohm; Thermal Resistance, Junction to Case A:0.45°C/W; Voltage, Vds Max:150V

Market price

型号	制造商	描述	库存	价格
IRFB61N15DPBF DISTI # 27534499	Infineon Technologies AG	Trans MOSFET N-CH 150V 60A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	530	500:$0.9216 100:$1.0176 12:$1.0848
IRFB61N15DPBF DISTI # IRFB61N15DPBF-ND	Infineon Technologies AG	MOSFET N-CH 150V 60A TO-220AB RoHS: Compliant Min Qty: 1 Container: Tube	2In Stock	1000:$1.3516 500:$1.6312 100:$2.0973 50:$2.3304 1:$2.8900
IRFB61N15DPBF DISTI # C1S322000522042	Infineon Technologies AG	Trans MOSFET N-CH 150V 60A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	530	500:$1.4800 100:$1.6200 25:$1.9700 5:$2.4300
IRFB61N15DPBF DISTI # SP001560242	Infineon Technologies AG	Trans MOSFET N-CH 150V 60A 3-Pin(3+Tab) TO-220AB (Alt: SP001560242) RoHS: Compliant Min Qty: 1	Europe - 445	1:€1.5900 10:€1.2900 25:€1.2900 50:€1.2900 100:€1.2900 500:€1.2900 1000:€1.2900
IRFB61N15DPBF DISTI # IRFB61N15DPBF	Infineon Technologies AG	Trans MOSFET N-CH 150V 60A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB61N15DPBF) RoHS: Compliant Min Qty: 1 Container: Tube	Americas - 0	1:$1.4900 10:$1.2900 25:$1.2900 50:$1.2900 100:$1.2900 500:$1.2900 1000:$1.2900
IRFB61N15DPBF. DISTI # 32AC0689	Infineon Technologies AG	Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.032ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5.5V,Power Dissipation Pd:330W,No. of Pins:3Pins RoHS Compliant: Yes	0	1:$2.4500 10:$2.0900 100:$1.6700 500:$1.5500 1000:$1.3800 5000:$1.0900
IRFB61N15DPBF DISTI # 70017262	Infineon Technologies AG	MOSFET,Power,N-Ch,VDSS 150V,RDS(ON) 0.032Ohm,ID 60A,TO-220AB,PD 330W,VGS +/-30V RoHS: Compliant	2658	1:$4.6500 10:$4.2800 100:$3.9400 250:$3.5400 500:$3.1900
IRFB61N15DPBF DISTI # 942-IRFB61N15DPBF	Infineon Technologies AG	MOSFET 150V 1 N-CH HEXFET 32mOhms 95nC RoHS: Compliant	2994	1:$2.5000 10:$2.1200
IRFB61N15DPBF DISTI # IRFB61N15DPBF	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,150V,60A,330W,TO220AB	75	1:$1.6500 3:$1.5000 10:$1.2500 100:$1.1300
IRFB61N15DPBF	International Rectifier	RoHS: Compliant	Europe - 1100
IRFB61N15DPBF		INSTOCK	190
IRFB61N15DPBF DISTI # 8657998	Infineon Technologies AG	MOSFET, N, 150V, 60A, TO-220 RoHS: Compliant	2892	1:£2.4100 10:£1.6200 100:£1.6000 250:£1.4300 500:£1.2500

图片	型号	描述
	Mfr.#: IRFB61N15DPBF OMO.#: OMO-IRFB61N15DPBF	MOSFET 150V 1 N-CH HEXFET 32mOhms 95nC
	Mfr.#: IRFB61N15D OMO.#: OMO-IRFB61N15D-1190	60 A, 150 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
	Mfr.#: IRFB61N15DPBF,FB61N15D OMO.#: OMO-IRFB61N15DPBF-FB61N15D-1190	全新原装
	Mfr.#: IRFB61N15PBF OMO.#: OMO-IRFB61N15PBF-1190	全新原装
	Mfr.#: IRFB61N15DPBF OMO.#: OMO-IRFB61N15DPBF-INFINEON-TECHNOLOGIES	MOSFET 150V 1 N-CH HEXFET 32mOhms 95nC

IRFB61N15DPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes