2SD1816S-E

Mfr. #:: 2SD1816S-E
制造商:: ON Semiconductor
描述:: Bipolar Transistors - BJT BIP NPN 4A 100V
生命周期:: 制造商新产品。
数据表:: 2SD1816S-E 数据表
交货:: DHL FedEx Ups TNT EMS
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ECAD Model:

产品属性
属性值

制造商：: 安森美半导体

产品分类：: 双极晶体管 - BJT

RoHS：: Y

晶体管极性：: NPN

配置：: 单身的

集电极-发射极电压 VCEO 最大值：: 100 V

发射极基极电压 VEBO：: 6 V

最大直流集电极电流：: 4 A

增益带宽积 fT：: 130 MHz

最低工作温度：: - 55 C

最高工作温度：: + 150 C

系列：: 2SD1816

高度：: 2.3 mm

打包：: 大部分

宽度：: 6.5 mm

品牌：: 安森美半导体

Pd - 功耗：: 20 W

产品类别：: BJT - 双极晶体管

出厂包装数量：: 500

子类别：: 晶体管

Tags: 2SD1816S, 2SD1816, 2SD181, 2SD18, 2SD1, 2SD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

2SD1816S-E 描述

***emi: Bipolar Transistor, 100V, 4A, Low VCE(sat), NPN Single

***r Electronics: Small Signal Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-251

***ical: Trans GP BJT NPN 100V 4A 1000mW 3-Pin(3+Tab) TP Bag

***ure Electronics: Bipolar Transistors - BJT BIP NPN 3A 100V

***r Electronics: Small Signal Bipolar Transistor, 3A I(C), 1-Element, NPN

***ical: Trans GP BJT NPN 100V 3A 1000mW 3-Pin(3+Tab) TP Bag

***nell: TRANSISTOR, BIPOLAR, NPN, 100V, 3A-TO251;

***-Wing Technology: Bulk Through Hole NPN Single Bipolar (BJT) Transistor 70 @ 500mA 5V 3A 1W 130MHz

***emi: Bipolar Transistor, 100V, 3A, Low VCE(sat), NPN Single, TP/TP-FA

***r Electronics: Small Signal Bipolar Transistor, 3A I(C), 1-Element, NPN

***et: Trans GP BJT PNP 100V 3A 3-Pin(3+Tab) TP T/R

***-Wing Technology: Bulk Through Hole NPN SINGLE Bipolar (BJT) Transistor 200 @ 500mA 5V 1muA ICBO 1W 180MHz

***emi: Bipolar Transistor, 100V, 4A, Low VCE(sat), NPN Single

***r Electronics: Small Signal Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-251

***ical: Trans GP BJT NPN 100V 4A 1000mW 3-Pin(3+Tab) TP Bag

*** Electronics: Bipolar Transistors - BJT BIP NPN 4A 100V

Market price

型号	制造商	描述	库存	价格
2SD1816S-E DISTI # V99:2348_07310488	ON Semiconductor	Trans GP BJT NPN 100V 4A 3-Pin(3+Tab) TP Bag RoHS: Compliant	85	2500:$0.3178 1000:$0.3580 100:$0.4350 10:$0.6743 1:$0.7819
2SD1816S-E DISTI # V36:1790_07310488	ON Semiconductor	Trans GP BJT NPN 100V 4A 3-Pin(3+Tab) TP Bag RoHS: Compliant	0
2SD1816S-E DISTI # 2SD1816S-E-ND	ON Semiconductor	TRANS NPN 100V 4A TP RoHS: Compliant Min Qty: 1 Container: Bulk	900In Stock	1000:$0.3943 500:$0.4929 100:$0.6235 10:$0.8130 1:$0.9200
2SD1816S-E DISTI # 25863597	ON Semiconductor	Trans GP BJT NPN 100V 4A 3-Pin(3+Tab) TP Bag RoHS: Compliant	85	2500:$0.3416 1000:$0.3849 100:$0.4676 20:$0.6590
2SD1816S-E DISTI # 2SD1816S-E	ON Semiconductor	Trans GP BJT NPN 100V 4A 3-Pin(3+Tab) TP Bag - Bulk (Alt: 2SD1816S-E) RoHS: Compliant Min Qty: 1500 Container: Bulk	Americas - 0	15000:$0.2889 7500:$0.2969 4500:$0.2999 3000:$0.3039 1500:$0.3059
2SD1816S-E DISTI # 65T2530	ON Semiconductor	BIP NPN 4A 100V / BLKBG	0	2500:$0.3380 1000:$0.3470 500:$0.4720 250:$0.4860 100:$0.5000 25:$0.7370 10:$0.7580 1:$0.9690
2SD1816S-E DISTI # 863-2SD1816S-E	ON Semiconductor	Bipolar Transistors - BJT BIP NPN 4A 100V RoHS: Compliant	223	1:$0.8800 10:$0.7280 100:$0.4700 1000:$0.3760 2500:$0.3170 10000:$0.3060 25000:$0.2940

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