UJ3D1210TS

UJ3D1210TS
Mfr. #:
UJ3D1210TS
制造商:
UnitedSiC
描述:
Schottky Diodes & Rectifiers 1200V/10A SiC SCHOTTKY DIODE G3
生命周期:
制造商新产品。
数据表:
UJ3D1210TS 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
UJ3D1210TS 更多信息
产品属性
属性值
制造商:
联合碳化硅
产品分类:
肖特基二极管和整流器
RoHS:
Y
产品:
肖特基碳化硅二极管
安装方式:
通孔
包装/案例:
TO-220-2
如果 - 正向电流:
10 A
Vrrm - 重复反向电压:
1200 V
Vf - 正向电压:
1.4 V
Ifsm - 正向浪涌电流:
120 A
配置:
单身的
技术:
碳化硅
Ir - 反向电流:
100 uA
最低工作温度:
- 55 C
最高工作温度:
+ 175 C
系列:
UJ3D
资质:
AEC-Q101
打包:
管子
品牌:
联合碳化硅
Pd - 功耗:
220.6 W
产品类别:
肖特基二极管和整流器
出厂包装数量:
50
子类别:
二极管和整流器
Vr - 反向电压:
1200 V
Tags
UJ3D121, UJ3D1, UJ3D, UJ3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SiC Cascodes
UnitedSiC SiC Cascodes are the 3rd generation gate drive SiC devices that are a combination of high-performance SiC JFETs and cascode optimized MOSFETs. These SiC Cascodes are the enhancement-mode power switches formed by a high-voltage SiC depletion-mode JFET and a low-voltage silicon MOSFET connected in series. The SiC Cascodes offer the best performance for the intrinsic diode forward drop (VSD) and recovery charge (QRR). These devices deliver ultra-low gate charge but also the best reverse recovery characteristics of any devices of similar ratings. 
UJ3D Series 650V & 1200V SiC Schottky Diodes
UnitedSiC UJ3D Series 650V and 1200V (Silicon-Carbide) Schottky Diodes are designed to take advantage of of SiC's superior physical characteristics over standard silicon, with 4 times better dynamic characteristics and 15% less forward voltage (VF).  With zero reverse recovery charge and a high maximum junction temperature of 175°C, these devices are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements. 
图片 型号 描述
LSIC1MO170E1000

Mfr.#: LSIC1MO170E1000

OMO.#: OMO-LSIC1MO170E1000

MOSFET 1700V 1000mOhm SiC MOSFET
LSIC1MO120E0160

Mfr.#: LSIC1MO120E0160

OMO.#: OMO-LSIC1MO120E0160

MOSFET 1200 V 160 mOhm SiC Mosfet
LSIC1MO120E0120

Mfr.#: LSIC1MO120E0120

OMO.#: OMO-LSIC1MO120E0120

MOSFET 1200 V 120 mOhm SiC Mosfet
STPSC10H12D

Mfr.#: STPSC10H12D

OMO.#: OMO-STPSC10H12D

Schottky Diodes & Rectifiers 1200V Power Schottky Silicon Carbide diode
MSC010SDA120K

Mfr.#: MSC010SDA120K

OMO.#: OMO-MSC010SDA120K

Schottky Diodes & Rectifiers 1200 V, 10 A SiC SBD
C2M1000170J

Mfr.#: C2M1000170J

OMO.#: OMO-C2M1000170J

MOSFET SIC MOSFET 1700V RDS ON 1 Ohm
LSIC1MO120E0080

Mfr.#: LSIC1MO120E0080

OMO.#: OMO-LSIC1MO120E0080

MOSFET 1200V 80mOhm SiC MOSFET
LSIC1MO120E0120

Mfr.#: LSIC1MO120E0120

OMO.#: OMO-LSIC1MO120E0120-LITTELFUSE

1200V/120mohm SiC MOSFET TO-247-3L
LSIC1MO120E0160

Mfr.#: LSIC1MO120E0160

OMO.#: OMO-LSIC1MO120E0160-LITTELFUSE

1200V/160mohm SiC MOSFET TO-247-3L
LSIC1MO170E1000

Mfr.#: LSIC1MO170E1000

OMO.#: OMO-LSIC1MO170E1000-LITTELFUSE

1700V/1000mohm SiC MOSFET TO-247-3L
可用性
库存:
32
订购:
2015
输入数量:
UJ3D1210TS的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$10.71
US$10.71
10
US$10.13
US$101.30
25
US$9.23
US$230.75
50
US$8.60
US$430.00
100
US$8.33
US$833.00
250
US$7.66
US$1 915.00
500
US$6.98
US$3 490.00
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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