IPP60R520E6XKSA1

Mfr. #:: IPP60R520E6XKSA1
制造商:: Infineon Technologies
描述:: MOSFET LOW POWER_LEGACY
生命周期:: 制造商新产品。
数据表:: IPP60R520E6XKSA1 数据表
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产品属性
属性值

制造商：: 英飞凌

产品分类：: MOSFET

技术：: 硅

安装方式：: 通孔

包装/案例：: TO-220-3

商品名：: 酷摩

打包：: 管子

高度：: 15.65 mm

长度：: 10 mm

宽度：: 4.4 mm

品牌：: 英飞凌科技

产品类别：: MOSFET

子类别：: MOSFET

第 # 部分别名：: IPP60R520E6XKSA1 SP000797294

单位重量：: 0.211644 oz

Tags: IPP60R520E, IPP60R5, IPP60R, IPP60, IPP6, IPP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPP60R520E6XKSA1 描述

***ical: Trans MOSFET N-CH 600V 8.1A 3-Pin(3+Tab) TO-220

***i-Key: MOSFET N-CH 600V 8.1A TO220

***ronik: N-CH 600V 8A 520mOhm TO220-3

***ineon: CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

Market price

型号	制造商	描述	库存	价格
IPP60R520E6XKSA1 DISTI # IPP60R520E6XKSA1-ND	Infineon Technologies AG	MOSFET N-CH 600V 8.1A TO220 RoHS: Compliant Min Qty: 500 Container: Tube	Limited Supply - Call
IPP60R520E6XKSA1 DISTI # IPP60R520E6XKSA1	Infineon Technologies AG	- Bulk (Alt: IPP60R520E6XKSA1) RoHS: Compliant Min Qty: 455 Container: Bulk	Americas - 0	4550:$0.6979 2275:$0.7109 1365:$0.7359 910:$0.7629 455:$0.7919
IPP60R520E6XKSA1 DISTI # N/A	Infineon Technologies AG	MOSFET LOW POWER_LEGACY	0
IPP60R520E6 DISTI # 726-IPP60R520E6	Infineon Technologies AG	MOSFET N-Ch 650V 8.1A TO220-3 CoolMOS E6 RoHS: Compliant	0	1:$1.5700 10:$1.3400 100:$1.0700 500:$0.9330
IPP60R520E6XKSA1	Infineon Technologies AG	Power Field-Effect Transistor, 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	1600	1000:$0.7200 500:$0.7600 100:$0.7900 25:$0.8300 1:$0.8900

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