BFR31,215

Mfr. #:: BFR31,215
制造商:: NXP Semiconductors
描述:: JFET TAPE7 FET-RFSS
生命周期:: 制造商新产品。
数据表:: BFR31,215 数据表
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更多信息:: BFR31,215 更多信息 BFR31,215 Product Details

产品属性
属性值

制造商：: 恩智浦

产品分类：: 场效应管

RoHS：: Y

安装方式：: 贴片/贴片

包装/案例：: SOT-23

晶体管极性：: N通道

配置：: 单身的

Vds - 漏源击穿电压：: 25 V

Vgs - 栅源击穿电压：: - 25 V

Vgs=0 时的漏源电流：: 1 mA

Id - 连续漏极电流：: 5 mA

Pd - 功耗：: 250 mW

最高工作温度：: + 150 C

打包：: 卷轴

高度：: 1 mm

长度：: 3 mm

类型：: 场效应管

宽度：: 1.4 mm

品牌：: 恩智浦半导体

栅源截止电压：: - 2.5 V

最大漏栅电压：: - 25 V

出厂包装数量：: 3000

第 # 部分别名：: 933163490215

单位重量：: 0.000282 oz

Tags: BFR31,21, BFR31,2, BFR31, BFR3, BFR

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BFR31,215 描述

***ure Electronics: N-Channel 25 V 250 mW Surface Mount Field-Effect Transistor - SOT-23

***nsix Microsemi: Small Signal Field-Effect Transistor, 0.01A I(D), 25V, 1-Element, N-Channel, Silicon, Junction FET

***hardson RFPD: RF SMALL SIGNAL TRANSISTOR MOSFET

***ment14 APAC: JFET, N CH, 25V, 0.005A, SOT-23

*** Americas: STANDARD MARKING * REEL PACK, SMD, LOW PROFILE, 7'

***ical: Trans JFET N-CH 25V 10mA 3-Pin TO-236AB T/R

***ark: N-Channel Fet Rohs Compliant: Yes

***nell: JFET, N CH, 25V, 0.005A, SOT-23; Breakdown Voltage Vbr: -; Zero Gate Voltage Drain Current Idss Min: 1mA; Zero Gate Voltage Drain Current Idss Max: 5mA; Gate-Source Cutoff Voltage Vgs(off) Max: -2.5V; Transistor Case Style: SOT-23; Transistor Type: JFET; No. of Pins: 3 Pin; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2019); Drain Source Voltage Vds: 25V; No. of Pins: 3Pins; Power Dissipation Pd: 250mW; Termination Type: Surface Mount Device; Transistor Polarity: N Channel

***(Formerly Allied Electronics): 5LN01C-TB-E N-channel MOSFET Transistor; 0.1 A; 50 V; 3-Pin CP

***emi: N-Channel Small Signal MOSFET, 50V, 0.1A, 7.8Ω, Single CP

***ure Electronics: N-Channel 50 V 7.8 O 1.57 nC Surface Mount Small Signal Mosfet - SOT-23

***nell: MOSFET, N CH 50V 0.1A SOT89; Transistor Type:MOSFET; Transistor Polarity:N; Typ Voltage Vds:50V; Cont Current Id:0.1A; On State Resistance:7.8ohm; Voltage Vgs Rds on Measurement:4V; Typ Voltage Vgs th:1.3V; Case Style:CP; Termination Type:SMD; Power Dissipation:0.25W; Transistor Case Style:SOT-89

***ure Electronics: Si2374DS Series 20 V 0.030 Ohm SMT N-Channel MOSFET - SOT-23 (TO-236)

***ment14 APAC: MOSFET, N-CH, 20V, 5.9A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:5.9A; Source Voltage Vds:20V; On Resistance

***roFlash: Small Signal Field-Effect Transistor, 5.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***nell: MOSFET, N-CH, 20V, 5.9A, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.9A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.025ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 1.7W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)

*** Source Electronics: Trans MOSFET P-CH 20V 3.1A 3-Pin SOT-23 T/R / MOSFET P-CH 20V 3.1A SOT23-3

***enic: 20V 3.1A 1.6W 112m´Î@4.5V2.8A 1V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS

***roFlash: Small Signal Field-Effect Transistor, 3.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***nell: MOSFET, P CH, -20V, -3.1A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.1A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.11ohm; Rds(on) Test Voltage Vgs:-2.5V; Power Dissipation Pd:1.6W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:-

***ure Electronics: P-Channel 30 V 2.4 Ohm Surface Mount Enhancement Mode Mosfet - SOT-323

***ark: Mosfet, P-Ch, 30V, 0.25A, Sot-323 Rohs Compliant: Yes |Diodes Inc. DMP32D4SW-7

***ical: Trans MOSFET P-CH 30V 0.25A Automotive 3-Pin SOT-323 T/R

***ure Electronics: N-Channel 50 V 3 Ohm ESD Protected Enhancement Mode Mosfet - SOT-323

***ark: Mosfet, N-Ch, 50V, 0.36A, Sot-323 Rohs Compliant: Yes |Diodes Inc. DMN53D0LW-7

*** Source Electronics: Trans MOSFET N-CH 50V 0.36A 3-Pin SOT-323 T/R / MOSFET N-CH 50V 360MA SOT323

***p One Stop: Trans MOSFET N-CH 60V 0.23A Automotive 3-Pin SOT-23 T/R

***el Electronic: Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3

*** Stop Electro: Small Signal Field-Effect Transistors

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