FQP12N60C

FQP12N60C
Mfr. #:
FQP12N60C
制造商:
ON Semiconductor
描述:
IGBT Transistors MOSFET 600V N-Ch Q-FET advance C-Series
生命周期:
制造商新产品。
数据表:
FQP12N60C 数据表
交货:
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支付:
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ECAD Model:
产品属性
属性值
制造商
仙童
产品分类
FET - 单
打包
管子
单位重量
0.063493 oz
安装方式
通孔
包装盒
TO-220-3
技术
通道数
1 Channel
配置
单身的
晶体管型
1 N-Channel
钯功耗
225 W
最高工作温度
+ 150 C
最低工作温度
- 55 C
秋季时间
90 ns
上升时间
85 ns
VGS-栅极-源极-电压
30 V
Id 连续漏极电流
12 A
Vds-漏-源-击穿电压
600 V
Rds-On-Drain-Source-Resistance
650 mOhms
晶体管极性
N通道
典型关断延迟时间
155 ns
典型开启延迟时间
30 ns
正向跨导最小值
13 S
通道模式
增强
Tags
FQP12N60C, FQP12N, FQP12, FQP1, FQP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
型号 制造商 描述 库存 价格
FQP12N60C
DISTI # FQP12N60C-ND
ON SemiconductorMOSFET N-CH 600V 12A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube
946In Stock
  • 1000:$1.4164
  • 500:$1.7094
  • 100:$2.1978
  • 10:$2.7350
  • 1:$3.0300
FQP12N60C
DISTI # FQP12N60C
ON SemiconductorTrans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP12N60C)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1:€1.3689
  • 10:€1.2449
  • 25:€1.1409
  • 50:€1.0949
  • 100:€1.0529
  • 500:€1.0139
  • 1000:€0.9779
FQP12N60C
DISTI # FQP12N60C
ON SemiconductorTrans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP12N60C)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 1000:$1.0589
  • 2000:$1.0529
  • 4000:$1.0389
  • 6000:$1.0259
  • 10000:$1.0009
FQP12N60C
DISTI # 97K0161
ON SemiconductorMOSFET, N, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:600V,On Resistance Rds(on):530mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:225W,MSL:-, RoHS Compliant: Yes1991
  • 1:$1.4900
  • 10:$1.3700
  • 100:$1.2500
  • 500:$1.2400
  • 1000:$1.2200
  • 2500:$1.2000
  • 5000:$1.1600
FQP12N60CFairchild Semiconductor CorporationPower Field-Effect Transistor, 12A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant
17000
  • 1000:$1.5000
  • 500:$1.5800
  • 100:$1.6400
  • 25:$1.7100
  • 1:$1.8500
FQP12N60C
DISTI # 512-FQP12N60C
ON SemiconductorMOSFET 600V N-Ch Q-FET advance C-Series
RoHS: Compliant
0
    FQP12N60CFairchild Semiconductor Corporation 350
      FQP12N60CFairchild Semiconductor Corporation 90
        FQP12N60C
        DISTI # 1095057
        ON SemiconductorMOSFET, N, TO-220
        RoHS: Compliant
        2023
        • 1:$4.8000
        • 10:$4.3300
        • 100:$3.4800
        • 500:$2.7100
        • 1000:$2.2500
        FQP12N60C
        DISTI # 1095057
        ON SemiconductorMOSFET, N, TO-220
        RoHS: Compliant
        3052
        • 1:£2.6300
        • 10:£2.1100
        • 100:£1.6900
        • 250:£1.5100
        • 500:£1.3200
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        MOSFET N-CH 600V 1.2A TO-220
        可用性
        库存:
        Available
        订购:
        2000
        输入数量:
        FQP12N60C的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
        参考价格(美元)
        数量
        单价
        小计金额
        1
        US$1.09
        US$1.09
        10
        US$1.04
        US$10.35
        100
        US$0.98
        US$98.08
        500
        US$0.93
        US$463.15
        1000
        US$0.87
        US$871.80
        从...开始
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