MJE5852G

Mfr. #:: MJE5852G
制造商:: ON Semiconductor
描述:: Bipolar Transistors - BJT 8A 400V 80W PNP
生命周期:: 制造商新产品。
数据表:: MJE5852G 数据表
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HTML Datasheet:: MJE5852G Datasheet MJE5852G Datasheet (P4-P6)MJE5852G Datasheet (P7-P8)
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产品属性
属性值

制造商：: 安森美半导体

产品分类：: 双极晶体管 - BJT

RoHS：: Y

安装方式：: 通孔

包装/案例：: TO-220-3

晶体管极性：: PNP

配置：: 单身的

集电极-发射极电压 VCEO 最大值：: 400 V

集电极-基极电压 VCBO：: 450 V

发射极基极电压 VEBO：: 6 V

集电极-发射极饱和电压：: 2 V

最大直流集电极电流：: 8 A

最低工作温度：: - 65 C

最高工作温度：: + 150 C

系列：: MJE5852

高度：: 15.75 mm

长度：: 10.53 mm

打包：: 管子

宽度：: 4.83 mm

品牌：: 安森美半导体

连续集电极电流：: 8 A

DC 集电极/基极增益 hfe 最小值：: 15

Pd - 功耗：: 80 W

产品类别：: BJT - 双极晶体管

出厂包装数量：: 50

子类别：: 晶体管

单位重量：: 0.211644 oz

Tags: MJE58, MJE5, MJE

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MJE5852G 描述

***(Formerly Allied Electronics): ON Semi MJE5852G PNP High Voltage Bipolar Transistor; 8 A; 400 V; 3-Pin TO-220AB

***ical: Trans GP BJT PNP 400V 8A 80000mW 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: MJE Series 400 V 8 A SWITCHMODE Series PNP Silicon Power Transistor - TO-220AB

***emi: 8.0 A, 400 V PNP Bipolar Power Transistor

***S.I.T. Europe - USA - Asia: Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

***enic: 400V 80W 8A 5@5A5V 5V@8A3A PNP -65¡Í~+150¡Í@(Tj) TO-220(TO-220-3) Bipolar Transistors - BJT ROHS

***nell: TRANSISTOR, PNP, TO-220AB; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 400V; Transition Frequency ft: -; Power Dissipation Pd: 80W; DC Collector Current: 8A; DC Current Gain hFE: 15hFE; Transistor Case Style:

***ark: RF TRANSISTOR, PNP, -400V, TO-220; Transistor Polarity:PNP; Collector Emitter Voltage Max:400V; Continuous Collector Current:8A; Power Dissipation:80W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes

***th Star Micro: The MJE5850 MJE5851 and the MJE5852 transistors are designed for high-volt age high-speed power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as:

***enic: 350V 80W 8A 5@5A5V PNP 5V@8A3A -65¡Í~+150¡Í@(Tj) TO-220 Bipolar Transistors - BJT ROHS

***Yang: Trans GP BJT PNP 350V 8A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube

***emi: 8.0 A, 350 V PNP Bipolar Power Transistor

***r Electronics: Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

***ment14 APAC: BIPOLAR TRANSISTOR, PNP, -350V, TO-220;

***th Star Micro: The MJE5850 MJE5851 and the MJE5852 transistors are designed for high-volt age high-speed power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as:

***emi: 8.0 A, 300 V PNP Bipolar Power Transistor

***r Electronics: Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

***el Electronic: RES SMD 7.68K OHM 1% 1/2W 1206

***(Formerly Allied Electronics): Transistor, Bipolar, Si, PNP, Power, VCEO 300VDC, IC 8A, PD 80W, TO-220AB, hFE 5

***enic: 300V 80W 8A PNP TO-220(TO-220-3) Bipolar Transistors - BJT ROHS

***ical: Trans GP BJT PNP 300V 8A 80000mW 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: MJE Series 300 V 8 A SWITCHMODE Series PNP Silicon Power Transistor - TO-220AB

***emi: 8.0 A, 300 V PNP Bipolar Power Transistor

***r Electronics: Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

***nell: TRANSISTOR, PNP, TO-220; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -300V; Transition Frequency ft: -; Power Dissipation Pd: 80W; DC Collector Cu; Available until stocks are exhausted Alternative available

***th Star Micro: The MJE5850 MJE5851 and the MJE5852 transistors are designed for high-volt age high-speed power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as:

Market price

型号	制造商	描述	库存	价格
MJE5852G DISTI # V36:1790_07283642	ON Semiconductor	Trans GP BJT PNP 400V 8A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	648	1000:$1.2926 500:$1.5340 100:$1.7273 50:$2.0979 1:$2.4084
MJE5852G DISTI # V99:2348_07283642	ON Semiconductor	Trans GP BJT PNP 400V 8A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	369	1000:$1.2926 500:$1.5340 100:$1.7273 50:$2.0979 1:$2.4084
MJE5852G DISTI # MJE5852GOS-ND	ON Semiconductor	TRANS PNP 400V 8A TO220AB RoHS: Compliant Min Qty: 1 Container: Tube	18In Stock	1000:$1.4063 500:$1.6973 100:$2.0659 50:$2.4248 1:$2.8600
MJE5852G DISTI # 30534971	ON Semiconductor	Trans GP BJT PNP 400V 8A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	648	500:$1.5340 100:$1.7273 50:$2.0979 7:$2.4084
MJE5852G DISTI # 30587790	ON Semiconductor	Trans GP BJT PNP 400V 8A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	373	100:$2.0272 50:$2.4352 10:$2.7412 8:$3.5955
MJE5852G DISTI # 30276818	ON Semiconductor	Trans GP BJT PNP 400V 8A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	369	100:$1.7273 50:$2.0979 6:$2.4084
MJE5852G DISTI # 31291194	ON Semiconductor	Trans GP BJT PNP 400V 8A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	250	500:$1.4784 250:$1.5840 100:$1.6608 50:$1.7280
MJE5852G DISTI # MJE5852G	ON Semiconductor	Trans GP BJT PNP 400V 8A 3-Pin(3+Tab) TO-220AB Rail (Alt: MJE5852G) RoHS: Compliant Min Qty: 50	Europe - 1400	1:€2.3500 10:€1.9900 100:€1.6000 250:€1.5000 500:€1.4000 1000:€1.0800
MJE5852G DISTI # MJE5852G	ON Semiconductor	Trans GP BJT PNP 400V 8A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: MJE5852G) RoHS: Compliant Min Qty: 1 Container: Tube	Americas - 0	1:$1.1900 10:$1.1900 25:$1.1900 50:$1.1900 100:$1.1900 500:$1.1900 1000:$1.1900
MJE5852G DISTI # 26K4469	ON Semiconductor	Trans GP BJT PNP 400V 8A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: 26K4469) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0	1:$3.0800 10:$2.6300 100:$2.1300 500:$1.8700 1000:$1.5600
MJE5852G DISTI # 26K4469	ON Semiconductor	RF TRANSISTOR, PNP, -400V, TO-220,Transistor Polarity:PNP,Collector Emitter Voltage V(br)ceo:400V,Transition Frequency ft:-,Power Dissipation Pd:80W,DC Collector Current:8A,DC Current Gain hFE:15hFE,No. of Pins:3Pins,MSL:- RoHS Compliant: Yes	47	1:$3.0800 10:$2.6300 100:$2.1300 500:$1.8700 1000:$1.5600
MJE5852G DISTI # 70100018	ON Semiconductor	ON Semi MJE5852G PNP High Voltage Bipolar Transistor,8 A,400 V,3-Pin TO-220AB RoHS: Compliant	0	1:$1.4990
MJE5852G	ON Semiconductor	MJE Series 400 V 8 A SWITCHMODE Series PNP Silicon Power Transistor - TO-220AB RoHS: Compliant	36Tube	10:$2.1300 50:$1.6200 100:$1.5500 250:$1.4500 500:$1.3800
MJE5851G DISTI # 863-MJE5851G	ON Semiconductor	Bipolar Transistors - BJT 8A 350V 80W PNP RoHS: Compliant	292	1:$2.9000 10:$2.4700 100:$1.9700 500:$1.7300 1000:$1.4300
MJE5852G DISTI # 863-MJE5852G	ON Semiconductor	Bipolar Transistors - BJT 8A 400V 80W PNP RoHS: Compliant	375	1:$2.7200 10:$2.3100 100:$1.8500 500:$1.6200 1000:$1.3400
MJE5852 DISTI # 863-MJE5852	ON Semiconductor	Bipolar Transistors - BJT 8A 400V 80W PNP RoHS: Not compliant	0
MJE5852 DISTI # 511-MJE5852	STMicroelectronics	Bipolar Transistors - BJT PNP High Voltage RoHS: Compliant	0
MJE5852G	ON Semiconductor	RoHS: Not Compliant	26	1000:$1.4300 500:$1.5100 100:$1.5700 25:$1.6400 1:$1.7700
MJE5852G DISTI # 5450292	ON Semiconductor	TRANSISTOR PNP 400V 8A 80W TO220AB, EA	300	1:£2.0000 10:£1.6500
MJE5852G	ON Semiconductor	RoHS: Compliant	Europe - 8
MJE5852G DISTI # 9555889	ON Semiconductor	TRANSISTOR, PNP, TO-220AB RoHS: Compliant	415	1:£2.3300 10:£1.7400 100:£1.4000 250:£1.3200 500:£1.2300
MJE5852G	ON Semiconductor	SWITCHMODE Series PNP Silicon Power Transistors	49	1:$1.9500 100:$1.5700 500:$1.4500 1000:$1.3700
MJE5852G DISTI # 9555889	ON Semiconductor	TRANSISTOR, PNP, TO-220AB RoHS: Compliant	1298	1:$4.3100 10:$3.6600 100:$2.9300 500:$2.5700 1000:$2.1300
MJE5852G DISTI # XSKDRABS0013091	ON SEMICONDUCTOR	RoHS: Compliant	1008	450:$1.6600 1008:$1.5500
MJE5852G DISTI # C1S541901370105	ON Semiconductor	Trans GP BJT PNP 400V 8A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	373	100:$1.5900 50:$1.9100 10:$2.1500 1:$2.8200
MJE5852G DISTI # C1S541900354304	ON Semiconductor	Trans GP BJT PNP 400V 8A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	250	100:$2.0100 50:$2.4400

图片	型号	描述
	Mfr.#: MJE15032G OMO.#: OMO-MJE15032G	Bipolar Transistors - BJT 8A 250V 50W NPN
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	Mfr.#: MJE15033G OMO.#: OMO-MJE15033G	Bipolar Transistors - BJT 8A 250V 50W PNP
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	Mfr.#: 1N4002-E3/73 OMO.#: OMO-1N4002-E3-73	Rectifiers Vr/100V Io/1A
	Mfr.#: UPW1V100MDD1TD OMO.#: OMO-UPW1V100MDD1TD	Aluminum Electrolytic Capacitors - Radial Leaded 10uF 35 Volts 20%
	Mfr.#: 1N914 OMO.#: OMO-1N914-ON-SEMICONDUCTOR	DIODE GEN PURP 100V 200MA DO35
	Mfr.#: 1N4002-E3/73 OMO.#: OMO-1N4002-E3-73-VISHAY	Rectifiers Vr/100V Io/1A

MJE5852G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes