BSM300D12P2E001

BSM300D12P2E001
Mfr. #:
BSM300D12P2E001
制造商:
Rohm Semiconductor
描述:
MOSFET 2N-CH 1200V 300A
生命周期:
制造商新产品。
数据表:
BSM300D12P2E001 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
BSM300D12P2E001 更多信息
产品属性
属性值
Tags
BSM300, BSM30, BSM3, BSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
Dual SiC N-Channel SiC Power Module, 300 A, 1200 V, 4-Pin C ROHM BSM300D12P2E001
***p One Stop Japan
Trans MOSFET N-CH 1.2KV 300A Automotive 11-Pin Tray
***et Europe
Trans MOSFET N-CH 1200V 300A 10-Pin Case E Tray
***ical
Trans MOSFET N-CH SiC 1.2KV 300A 11-Pin Tray
***ukat
SiC-N-Ch-Half-Bridge+2xSBD 1200V 300A E-
***i-Key
MOSFET 2N-CH 1200V 300A
***ronik
SICDMOS 1200V 300A 1.6V Modul
***
300A SIC POWER MODULE
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
SiC Power Modules
ROHM Semiconductor SiC power modules are Half Bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These modules support high-frequency operation through reduced switching loss. The optimized design reduces stary inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.
BSM300D12P2E001 SiC Power Module
ROHM BSM300D12P2E001 SiC Power Module is a half bridge module consisting of a Silicon Carbide DMOSFET and a Silicon Carbide Schottky Barrier Diode. It's designed for Motor Drives, Inverter/Converters, Photovoltaics, energy harvesting and induction heating equipment. It has low surge, low switching loss and high-speed switching is possible.
型号 制造商 描述 库存 价格
BSM300D12P2E001
DISTI # BSM300D12P2E001-ND
ROHM SemiconductorMOSFET 2N-CH 1200V 300A
RoHS: Compliant
Min Qty: 1
Container: Tray
6In Stock
  • 1:$663.0800
BSM300D12P2E001
DISTI # BSM300D12P2E001
ROHM SemiconductorTrans MOSFET N-CH 1200V 300A 10-Pin Case E Tray (Alt: BSM300D12P2E001)
RoHS: Compliant
Min Qty: 1
Container: Case
Europe - 0
  • 1:€638.5900
BSM300D12P2E001
DISTI # BSM300D12P2E001
ROHM SemiconductorTrans MOSFET N-CH 1200V 300A 10-Pin Case E Tray - Bulk (Alt: BSM300D12P2E001)
RoHS: Compliant
Min Qty: 4
Container: Bulk
Americas - 0
    BSM300D12P2E001
    DISTI # 755-BSM300D12P2E001
    ROHM SemiconductorDiscrete Semiconductor Modules 300A SiC Power Module
    RoHS: Compliant
    46
    • 1:$639.4400
    • 5:$600.9100
    BSM300D12P2E001ROHM Semiconductor 3
    • 4:$885.8400
    • 2:$941.2050
    • 1:$968.8875
    BSM300D12P2E001
    DISTI # BSM300D12P2E001
    ROHM SemiconductorSiC-N-Ch-Half-Bridge+2xSBD 1200V 300A E-
    RoHS: Compliant
    4
    • 1:€895.4000
    • 4:€835.4000
    • 8:€805.4000
    • 12:€777.3800
    BSM300D12P2E001
    DISTI # TMOSP11415
    ROHM SemiconductorSICDMOS 1200V 300A 1.6V Modul
    RoHS: Compliant
    Stock DE - 0Stock HK - 0Stock US - 0
    • 4:$767.9200
    BSM300D12P2E001-EDEM3
    DISTI # AS0000000000108
    AgileSwitch 
    RoHS: Compliant
    2 in Stock0 on Order
    • 100:$174.2300
    • 50:$182.9400
    • 10:$191.6500
    • 1:$200.3600
    BSM300D12P2E001ROHM SemiconductorDiscrete Semiconductor Modules 300A SiC Power Module
    RoHS: Compliant
    Americas - 6
      BSM300D12P2E001ROHM SemiconductorRoHS(ship within 1day)4
      • 1:$610.7700
      • 10:$588.8000
      • 50:$571.2300
      • 100:$562.4400
      • 500:$558.0400
      • 1000:$553.6500
      图片 型号 描述
      BSM300D12P2E001

      Mfr.#: BSM300D12P2E001

      OMO.#: OMO-BSM300D12P2E001

      Discrete Semiconductor Modules 300A SiC Power Module
      BSM300D12P2E001-EDEM3

      Mfr.#: BSM300D12P2E001-EDEM3

      OMO.#: OMO-BSM300D12P2E001-EDEM3-1190

      全新原装
      BSM300D12P2E001

      Mfr.#: BSM300D12P2E001

      OMO.#: OMO-BSM300D12P2E001-ROHM-SEMI

      MOSFET 2N-CH 1200V 300A
      可用性
      库存:
      Available
      订购:
      1500
      输入数量:
      BSM300D12P2E001的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格(美元)
      数量
      单价
      小计金额
      1
      US$825.33
      US$825.33
      10
      US$784.06
      US$7 840.64
      100
      US$742.80
      US$74 279.70
      500
      US$701.53
      US$350 765.25
      1000
      US$660.26
      US$660 264.00
      由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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