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IKW75N65EL5XKSA1

IKW75N65EL5XKSA1
Mfr. #:
IKW75N65EL5XKSA1
制造商:
Infineon Technologies
描述:
IGBT Transistors 650V IGBT Trenchstop 5
生命周期:
制造商新产品。
数据表:
IKW75N65EL5XKSA1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
IKW75N65EL5XKSA1 更多信息
产品属性
属性值
制造商：
英飞凌
产品分类：
IGBT晶体管
RoHS：
Y
技术：
硅
包装/案例：
TO-247-3
安装方式：
通孔
配置：
单身的
集电极-发射极电压 VCEO 最大值：
650 V
集电极-发射极饱和电压：
1.1 V
最大栅极发射极电压：
20 V
25 C 时的连续集电极电流：
80 A
Pd - 功耗：
536 W
最低工作温度：
- 40 C
最高工作温度：
+ 175 C
系列：
TRENCHSTOP 5 L5
打包：
管子
品牌：
英飞凌科技
栅极-发射极漏电流：
100 nA
产品类别：
IGBT晶体管
出厂包装数量：
240
子类别：
IGBT
商品名：
战壕
第 # 部分别名：
IKW75N65EL5 SP001174464
单位重量：
0.213478 oz
Tags
IKW75N65, IKW75N, IKW7, IKW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N=-CH 650V 80A 536000mW 3-Pin(3+Tab) TO-247 Tube
***ark
Igbt, Single, 650V, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.1V; Power Dissipation Pd:536W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IKW75N65EL5XKSA1
***ineon SCT
Infineon’s new L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz, PG-TO247-3, RoHS
***ineon
Infineons new L5 low saturation voltage (V CE(sat)) TRENCHSTOP IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55m TRENCHSTOP 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level 1.05V for 30A IGBT and 1.10V for 75A IGBT. | Summary of Features: Lowest saturation voltage V CE(sat) of only 1.05V; Low switching losses of 1.6mJ @ 25C for 30A IGBT; High thermal stability of electrical parameters - only 2% drift with T j increase from 25C to 175C; Enhanced efficiency for 20% lower switching losses in TO-247 4pin Kelvin-Emitter package | Benefits: Higher efficiency for 50Hz; Longer lifetime and higher reliability of IGBT; High design reliability due to stable thermal performance | Target Applications: UPS; Solar; Welding
*** Stop Electro
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247
***ark
Igbt, Single, 650V, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.35V; Power Dissipation Pd:230W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IHW40N65R5XKSA1
***ineon SCT
Infineon combines the industry leading performance of the TRENCHSTOP™ 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices, PG-TO247-3, RoHS
***ineon
Infineon combines the industry leading performance of the TRENCHSTOP 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices. With a monolithically integrated diode, the 650V RC-H5 IGBTs are perfectly suited for soft switching applications such as induction cooking stoves and inverterized microwave ovens, but are also suitable for designs which require some hard switching capabilities as well. | Summary of Features: Lowest V CE(sat) and optimized E off for loss reduction up to 30% compared to previous generation; 650V blocking voltage; Hard switching capable | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature for higher device reliability; 50V higher voltage possible for increased reliability; Performs well in designs with higher switching frequencies up to 40kHz | Target Applications: Induction cooking stoves; Inverterized microwave ovens; Other resonant switching topologies
***ure Electronics
IHW50N65R5 Series 650 V 80 A 282 W Reverse Conducting IGBT - PG-TO-247-3
***ark
Igbt, Single, 650V, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.35V; Power Dissipation Pd:282W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IHW50N65R5XKSA1
***ineon SCT
Infineon combines the industry leading performance of the TRENCHSTOP™ 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices, PG-TO247-3, RoHS
***ineon
Infineon combines the industry leading performance of the TRENCHSTOP 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices. With a monolithically integrated diode, the 650V RC-H5 IGBTs are perfectly suited for soft switching applications such as induction cooking stoves and inverterized microwave ovens, but are also suitable for designs which require some hard switching capabilities as well. | Summary of Features: Lowest V CE(sat) and optimized E off for loss reduction up to 30% compared to previous generation; 650V blocking voltage; Hard switching capable | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature for higher device reliability; 50V higher voltage possible for increased reliability; Performs well in designs with higher switching frequencies up to 40kHz | Target Applications: Induction cooking stoves; Inverterized microwave ovens; Other resonant switching topologies
*** Stop Electro
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247
***ark
Igbt, Single, 650V, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.4V; Power Dissipation Pd:230W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IKW40N65WR5XKSA1
***ineon
The reverse conducting TRENCHSTOP 5 WR5 IGBT was specifically optimized for full rated hard switching turn off typically found in Welding inverter application. Excellent price/performance ratio of WR5 IGBT allows access to the high performance technology also for cost sensitive customers. WR5 is recommended for use in AC-DC PFC stage in Welding, UPS and Solar. | Summary of Features: Optimized for full rated hard switching turn off typically found in Welding; Very low V ce(sat) of 1.35V @25C; Low E tot; Soft recovery and low Q rr for diode; Good R goff controllability | Benefits: Best price/performance ratio; Good fit to mainstream design of fsw>20kHz; Low T j & T c for lower heatsink and cooling cost | Target Applications: Welding; UPS; Solar
***roFlash
Igbt Single Transistor, 80 A, 1.7 V, 366 W, 650 V, To-247, 3 Rohs Compliant: Yes
***ical
Trans IGBT Chip N-CH 650V 80A 36000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
NGTB40N65: 650 V 80 A 366 W Through Hole Field Stop II IGBT - TO-247-3
***nell
650V/40A FAST IGBT FSII T; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 366W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
***ical
Trans IGBT Chip N=-CH 650V 80A 290000mW 3-Pin(3+Tab) TO-247AB Tube
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild®’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
***nell
IGBT,N CH,W DIODE,650V,80A,TO247AB; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:650V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:650V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:290W
***ical
Trans IGBT Chip N=-CH 650V 80A 268000mW 3-Pin(3+Tab) TO-247 Tube
***ark
650V FIELD STOP TRENCH IGBT - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB
***ure Electronics
FGH40T65UPD Series 650 V 40 A Field Stop Trench IGBT - TO-247-3
***rchild Semiconductor
Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital power generator where low conduction and switching losses are essential.
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 L5 (Low Saturation 5) IGBTs
Infineon TRENCHSTOP™ 5 L5 (Low Saturation 5) IGBTs are at the other end of the switching frequency range, and are optimized to deliver outstanding performance in designs switching <10kHz. Infineon's L5 have been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. The L5 offer a low VCE(sat) of 1.05V for 30A IGBTs, lowest switching losses in reactive power mode, at cos φ <1 and high thermal stability of electrical parameters. A new efficiency level is reachable with the 1.05V VCE(sat) TRENCHSTOP™ 5 L5 for low speed switching devices.
型号 制造商 描述 库存 价格
IKW75N65EL5XKSA1
DISTI # V36:1790_06376939		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
    IKW75N65EL5XKSA1
    DISTI # V99:2348_06376939    		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant    		0
      IKW75N65EL5XKSA1
      DISTI # IKW75N65EL5XKSA1IN-ND      		Infineon Technologies AGIGBT 650V 75A FAST DIODE TO247-3
      RoHS: Compliant
      Min Qty: 1
      Container: Tube      		On Order
      • 720:$6.1163
      • 240:$7.0239
      • 25:$8.0892
      • 10:$8.4840
      • 1:$9.3900
      IKW75N65EL5XKSA1
      DISTI # SP001174464      		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube (Alt: SP001174464)
      RoHS: Compliant
      Min Qty: 1
      Container: Tube      		Europe - 8
      • 1000:€3.8900
      • 500:€4.1900
      • 100:€4.2900
      • 50:€4.4900
      • 25:€4.6900
      • 10:€4.8900
      • 1:€5.2900
      IKW75N65EL5XKSA1
      DISTI # IKW75N65EL5XKSA1      		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: IKW75N65EL5XKSA1)
      RoHS: Compliant
      Min Qty: 240
      Container: Tube      		Americas - 0
      • 2400:$4.6900
      • 1440:$4.7900
      • 960:$4.9900
      • 480:$5.1900
      • 240:$5.3900
      IKW75N65EL5XKSA1
      DISTI # 726-IKW75N65EL5XKSA1      		Infineon Technologies AGIGBT Transistors 650V IGBT Trenchstop 5
      RoHS: Compliant      		1
      • 1:$8.9400
      • 10:$8.0800
      • 25:$7.7000
      • 100:$6.6900
      • 250:$6.3900
      • 500:$5.8200
      IKW75N65EL5XKSA1
      DISTI # 2709881      		Infineon Technologies AGIGBT, SINGLE, 650V, 80A, TO-247
      RoHS: Compliant      		0
      • 720:$9.2800
      • 240:$10.6500
      • 10:$12.8600
      • 1:$14.2200
      IKW75N65EL5XKSA1
      DISTI # 2709881      		Infineon Technologies AGIGBT, SINGLE, 650V, 80A, TO-247
      RoHS: Compliant      		0
      • 100:£5.1500
      • 50:£5.5400
      • 10:£5.9300
      • 5:£6.8900
      • 1:£7.4500
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      可用性
      库存:
      Available
      订购:
      1984
      输入数量:
      IKW75N65EL5XKSA1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格（美元）
      数量
      单价
      小计金额
      1
      US$8.94
      US$8.94
      10
      US$8.08
      US$80.80
      25
      US$7.70
      US$192.50
      100
      US$6.69
      US$669.00
      250
      US$6.39
      US$1 597.50
      500
      US$5.82
      US$2 910.00
      由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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