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SI5906DU-T1-GE3

SI5906DU-T1-GE3
Mfr. #:
SI5906DU-T1-GE3
制造商:
Vishay / Siliconix
描述:
MOSFET RECOMMENDED ALT 78-SI5936DU-T1-GE3
生命周期:
制造商新产品。
数据表:
SI5906DU-T1-GE3 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商：
威世
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
PowerPAK-ChipFET-8
商品名：
沟槽场效应晶体管
打包：
卷轴
高度：
0.75 mm
长度：
3 mm
系列：
SI5
宽度：
1.8 mm
品牌：
威世 / Siliconix
产品类别：
MOSFET
出厂包装数量：
3000
子类别：
MOSFET
第 # 部分别名：
SI5906DU-GE3
Tags
SI590, SI59, SI5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Si5906DU Series Dual N-Channel 30 V 31 mOhm 10.4 W Surface Mount Mosfet
***nell
DUAL N CHANNEL MOSFET, 30V, 6A
***ronik
DUAL 30V 6A 31mOhm ChipFET RoHSconf
***ment14 APAC
DUAL N CHANNEL MOSFET, 30V, 6A; Transist; DUAL N CHANNEL MOSFET, 30V, 6A; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:6A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.025ohm; Rds(on) Test Voltage Vgs:10V
型号 制造商 描述 库存 价格
SI5906DU-T1-GE3
DISTI # SI5906DU-T1-GE3TR-ND		Vishay SiliconixMOSFET 2N-CH 30V 6A PPAK FET
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    SI5906DU-T1-GE3
    DISTI # SI5906DU-T1-GE3CT-ND    		Vishay SiliconixMOSFET 2N-CH 30V 6A PPAK FET
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      SI5906DU-T1-GE3
      DISTI # SI5906DU-T1-GE3DKR-ND      		Vishay SiliconixMOSFET 2N-CH 30V 6A PPAK FET
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        SI5906DU-T1-GE3
        DISTI # 35R0083        		Vishay IntertechnologiesDUAL N CHANNEL MOSFET, 30V, 6A, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.031ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V RoHS Compliant: Yes0
          SI5906DU-T1-GE3
          DISTI # 35R6244          		Vishay IntertechnologiesDUAL N CHANNEL MOSFET, 30V, 6A,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.031ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V RoHS Compliant: Yes0
            SI5906DU-T1-GE3
            DISTI # 781-SI5906DU-GE3            		Vishay IntertechnologiesMOSFET 30V 6.0A 10.4W 31mohm @ 10V
            RoHS: Compliant            		0
              SI5906DU-T1-GE3
              DISTI # 1781666              		Vishay IntertechnologiesDUAL N CHANNEL MOSFET, 30V, 6A
              RoHS: Compliant              		0
              • 3000:£0.2180
              图片 型号 描述
              SI5906DU-T1-GE3

              Mfr.#: SI5906DU-T1-GE3

              OMO.#: OMO-SI5906DU-T1-GE3

              		 MOSFET RECOMMENDED ALT 78-SI5936DU-T1-GE3
              SI5906DU-T1-GE3

              Mfr.#: SI5906DU-T1-GE3

              OMO.#: OMO-SI5906DU-T1-GE3-VISHAY

              		 IGBT Transistors MOSFET 30V 6.0A 10.4W 31mohm @ 10V
              可用性
              库存:
              Available
              订购:
              4500
              输入数量:
              SI5906DU-T1-GE3的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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