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IRF3805STRL-7PP

IRF3805STRL-7PP
Mfr. #:
IRF3805STRL-7PP
制造商:
Infineon / IR
描述:
MOSFET MOSFT 55V 240A 2.6mOhm 130nC
生命周期:
制造商新产品。
数据表:
IRF3805STRL-7PP 数据表
交货:
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支付:
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HTML Datasheet:
IRF3805STRL-7PP DatasheetIRF3805STRL-7PP Datasheet (P4-P6)IRF3805STRL-7PP Datasheet (P7-P9)IRF3805STRL-7PP Datasheet (P10-P11)
ECAD Model:
产品属性
属性值
制造商：
英飞凌
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
TO-252-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
55 V
Id - 连续漏极电流：
240 A
Rds On - 漏源电阻：
2.6 mOhms
Vgs - 栅源电压：
20 V
Qg - 门电荷：
130 nC
最低工作温度：
- 55 C
Pd - 功耗：
300 W
配置：
单身的
频道模式：
增强
打包：
卷轴
高度：
2.3 mm
长度：
6.5 mm
晶体管类型：
1 N-Channel
宽度：
6.22 mm
品牌：
英飞凌/红外
秋季时间：
52 ns
产品类别：
MOSFET
上升时间：
130 ns
出厂包装数量：
800
子类别：
MOSFET
典型关断延迟时间：
80 ns
典型的开启延迟时间：
23 ns
第 # 部分别名：
SP001554002
单位重量：
0.139332 oz
Tags
IRF3805STRL, IRF3805ST, IRF3805S, IRF3805, IRF38, IRF3, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    R***n
    R***n
    RU

    How much they live will show the time, then over time i can supplement the review, and so until you put it not clear

    2019-01-08
    C***n
    C***n
    KZ

    Smaller than I expected

    2019-04-07
***(Formerly Allied Electronics)
IRF3805S-7PPBF N-channel MOSFET Transistor; 240 A; 55 V; 7-Pin D2PAK
***ure Electronics
Single N-Channel 55 V 2.6 mOhm 200 nC HEXFET® Power Mosfet - D2PAK-7
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a 7-Lead D2-Pak package, D2PAK7P, RoHS
***trelec
Operating temperature: -55...+175 °C Housing type: D2PAK Polarity: N Power dissipation: 300 W
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
***ical
Trans MOSFET N-CH Si 55V 240A 7-Pin(6+Tab) D2PAK Tube
***nell
MOSFET, N, 55V, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 160A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.0026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissip
***et Europe
Trans MOSFET N-CH 55V 240A 7-Pin D2PAK T/R
***ical
Trans MOSFET N-CH Si 55V 240A Automotive T/R
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:240A; On Resistance Rds(On):0.002Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Msl:- Rohs Compliant: Yes
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 60 V 2.4 mOhm 186 nC HEXFET® Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH Si 60V 232A 3-Pin(2+Tab) D2PAK Tube
***(Formerly Allied Electronics)
MOSFET, 60V,195A, 2.4mOhm, 186nC, D2PAK
*** Stop Electro
Power Field-Effect Transistor, 195A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
***icroelectronics
N-channel 60 V, 1.7 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-6 package
***r Electronics
Power Field-Effect Transistor, 180A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) H2PAK T/R
***ure Electronics
N-Channel 60 V 2.4 mOhm SMT STripFET VI DeepGate Power Mosfet - H2PAK-6
***icroelectronics SCT
Power MOSFETs, 60V, 180A, H2PAK-6, Tape and Reel
***r Electronics
Power Field-Effect Transistor, 180A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***icroelectronics
Automotive-grade N-channel 60 V, 1.6 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-6 package
***et
Trans MOSFET N-CH 60V 180A 6-Pin H2PAK T/R
***icroelectronics SCT
Automotive Power Discrete, 60V, 180A, H2PAK-6, Tape and Reel
***el Electronic
CAP CERAMIC DISK RDL LONG LEADS
型号 制造商 描述 库存 价格
IRF3805STRL-7PP
DISTI # IRF3805STRL-7PPTR-ND		Infineon Technologies AGMOSFET N-CH 55V 160A D2PAK-7
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		On Order
  • 800:$2.1102
IRF3805STRL-7PP
DISTI # IRF3805STRL-7PPCT-ND		Infineon Technologies AGMOSFET N-CH 55V 160A D2PAK-7
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 100:$2.9704
  • 10:$3.6220
  • 1:$4.0600
IRF3805STRL-7PP
DISTI # IRF3805STRL-7PPDKR-ND		Infineon Technologies AGMOSFET N-CH 55V 160A D2PAK-7
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 100:$2.9704
  • 10:$3.6220
  • 1:$4.0600
IRF3805STRL-7PP
DISTI # IRF3805STRL-7PP		Infineon Technologies AGTrans MOSFET N-CH 55V 240A 7-Pin(6+Tab) D2PAK T/R - Tape and Reel (Alt: IRF3805STRL-7PP)
RoHS: Compliant
Min Qty: 800
Container: Reel		Americas - 0
  • 800:$1.6900
  • 1600:$1.6900
  • 3200:$1.6900
  • 4800:$1.6900
  • 8000:$1.6900
IRF3805STRL-7PP
DISTI # IRF3805STRL-7PP		Infineon Technologies AGTrans MOSFET N-CH 55V 240A 7-Pin(6+Tab) D2PAK T/R (Alt: IRF3805STRL-7PP)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel		Asia - 0
  • 800:$2.0047
  • 1600:$1.9223
  • 2400:$1.8963
  • 4000:$1.8224
  • 8000:$1.7991
  • 20000:$1.7541
  • 40000:$1.7113
IRF3805STRL-7PP
DISTI # SP001554002		Infineon Technologies AGTrans MOSFET N-CH 55V 240A 7-Pin(6+Tab) D2PAK T/R (Alt: SP001554002)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel		Europe - 0
  • 800:€1.6900
  • 1600:€1.5900
  • 3200:€1.5900
  • 4800:€1.4900
  • 8000:€1.3900
IRF3805STRL-7PP
DISTI # 49AC0322		Infineon Technologies AGMOSFET, N-CH, 55V, 240A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:240A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.002ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation, RoHS Compliant: Yes0
  • 1:$3.3900
  • 10:$2.8800
  • 25:$2.7500
  • 50:$2.6300
  • 100:$2.5000
  • 250:$2.3700
  • 500:$2.1300
IRF3805STRL-7PP
DISTI # 942-IRF3805STRL-7PP		Infineon Technologies AGMOSFET MOSFT 55V 240A 2.6mOhm 130nC
RoHS: Compliant		0
  • 1:$3.3900
  • 10:$2.8800
  • 100:$2.5000
  • 250:$2.3700
  • 500:$2.1300
  • 800:$1.8000
IRF3805STRL-7PP
DISTI # 2839478		Infineon Technologies AGMOSFET, N-CH, 55V, 240A, TO-263
RoHS: Compliant		0
  • 1:$4.8900
  • 10:$4.5700
  • 100:$4.0400
  • 250:$3.8200
  • 500:$3.6200
  • 1000:$3.4400
IRF3805STRL-7PP
DISTI # 2839478		Infineon Technologies AGMOSFET, N-CH, 55V, 240A, TO-263
RoHS: Compliant		0
  • 1:£2.8800
  • 10:£2.1800
  • 100:£1.9000
  • 250:£1.7900
  • 500:£1.6600
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 全新原装
可用性
库存:
Available
订购:
1987
输入数量:
IRF3805STRL-7PP的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$3.38
US$3.38
10
US$2.87
US$28.70
100
US$2.49
US$249.00
250
US$2.36
US$590.00
500
US$2.12
US$1 060.00
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