SIDR638DP-T1-GE3

Name: Vishay - SIDR638DP-T1-GE3
Brand: Vishay
SKU: OMO-3938292
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SIDR638DP-T1-GE3
制造商:: Vishay
描述:: MOSFET N-CH 40V 100A SO-8
生命周期:: 制造商新产品。
数据表:: SIDR638DP-T1-GE3 数据表
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更多信息:: SIDR638DP-T1-GE3 更多信息

产品属性
属性值

Tags: SIDR6, SIDR, SID

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIDR638DP-T1-GE3 描述

***et Europe: TrenchFET Gen IV Power MOSFET N-Channel Single 40V VDS +20V -16V VGS 100A ID 8-Pin PowerPAK SOIC T/R

***i-Key: MOSFET N-CH 40V 100A SO-8

***ark: Mosfet, N-Ch, 40V, 100A, 150Deg C, 125W; Transistor Polarity:n Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(On):0.00073Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.3V; Powerrohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 40V, 100A, 150DEG C, 125W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00073ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.3V; Power Dissipation Pd:125W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CANALE N, 40V, 100A, 150°C, 125W; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:40V; Resistenza di Attivazione Rds(on):0.00073ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.3V; Dissipazione di Potenza Pd:125W; Modello Case Transistor:PowerPAK SO; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Gen IV Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

SIDR638DP-T1-GE3 更多信息

TrenchFET® Gen IV Top-Side Double Cooling MOSFETs: Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs feature top-side cooling and offer an additional venue for thermal transfer. These MOSFETs come in the PowerPAK® SO-8DC package. The TrenchFET double cooling MOSFETs offer variants with different drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V. These N-channel MOSFETs operate at a temperature range from -55°C to 150°C. The TrenchFET MOSFETs can be utilized for product-specific applications including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.

Market price

型号	制造商	描述	库存	价格
SIDR638DP-T1-GE3 DISTI # SIDR638DP-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 40V 100A SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	6000:$0.9394 3000:$0.9511
SIDR638DP-T1-GE3 DISTI # SIDR638DP-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 40V 100A SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$1.0522 500:$1.2700 100:$1.5457 10:$1.9230 1:$2.1400
SIDR638DP-T1-GE3 DISTI # SIDR638DP-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 40V 100A SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$1.0522 500:$1.2700 100:$1.5457 10:$1.9230 1:$2.1400
SIDR638DP-T1-GE3 DISTI # SIDR638DP-T1-GE3	Vishay Intertechnologies	TrenchFET Gen IV Power MOSFET N-Channel Single 40V VDS +20V -16V VGS 100A ID 8-Pin PowerPAK SOIC T/R (Alt: SIDR638DP-T1-GE3) RoHS: Compliant Min Qty: 1 Container: Tape and Reel	Europe - 0	1000:€0.8569 500:€0.8809 100:€0.8929 50:€0.9069 25:€1.0209 10:€1.2379 1:€1.7669
SIDR638DP-T1-GE3 DISTI # SIDR638DP-T1-GE3	Vishay Intertechnologies	TrenchFET Gen IV Power MOSFET N-Channel Single 40V VDS +20V -16V VGS 100A ID 8-Pin PowerPAK SOIC T/R - Tape and Reel (Alt: SIDR638DP-T1-GE3) RoHS: Compliant Min Qty: 6000 Container: Reel	Americas - 0	60000:$0.8599 30000:$0.8839 18000:$0.9089 12000:$0.9469 6000:$0.9759
SIDR638DP-T1-GE3 DISTI # 59AC7339	Vishay Intertechnologies	N-CHANNEL 40-V (D-S) MOSFET	0	10000:$0.8390 6000:$0.8730 4000:$0.9060 2000:$1.0100 1000:$1.0600 1:$1.1300
SIDR638DP-T1-GE3 DISTI # 78AC6504	Vishay Intertechnologies	MOSFET, N-CH, 40V, 100A, 150DEG C, 125W,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.00073ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.3V,PowerRoHS Compliant: Yes	0	500:$1.1900 250:$1.2800 100:$1.3600 50:$1.4900 25:$1.6300 10:$1.7600 1:$2.1100
SIDR638DP-T1-GE3 DISTI # 78-SIDR638DP-T1-GE3	Vishay Intertechnologies	MOSFET 40V Vds 20V Vgs PowerPAK SO-8DC RoHS: Compliant	0	1:$2.0900 10:$1.7400 100:$1.3500 500:$1.1800 1000:$0.9730 3000:$0.9060 6000:$0.8730 9000:$0.8390
SIDR638DP-T1-GE3 DISTI # 2932899	Vishay Intertechnologies	MOSFET, N-CH, 40V, 100A, 150DEG C, 125W	0	500:£0.8650 250:£0.9270 100:£0.9890 10:£1.2900 1:£1.7400
SIDR638DP-T1-GE3 DISTI # 2932899	Vishay Intertechnologies	MOSFET, N-CH, 40V, 100A, 150DEG C, 125W RoHS: Compliant	0	1000:$1.5200 500:$1.6000 250:$1.8900 100:$2.2900 10:$2.9200 1:$3.5300

SIDR638DP-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes