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IRF7403TRPBF

IRF7403TRPBF
Mfr. #:
IRF7403TRPBF
制造商:
Infineon Technologies
描述:
MOSFET MOSFT 30V 8.5A 22mOhm 38nC
生命周期:
制造商新产品。
数据表:
IRF7403TRPBF 数据表
交货:
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支付:
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HTML Datasheet:
IRF7403TRPBF DatasheetIRF7403TRPBF Datasheet (P4-P6)IRF7403TRPBF Datasheet (P7-P9)
ECAD Model:
更多信息:
IRF7403TRPBF 更多信息
产品属性
属性值
制造商：
英飞凌
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
SO-8
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
30 V
Id - 连续漏极电流：
8.5 A
Rds On - 漏源电阻：
35 mOhms
Vgs - 栅源电压：
20 V
Qg - 门电荷：
38 nC
Pd - 功耗：
2.5 W
配置：
单身的
打包：
卷轴
高度：
1.75 mm
长度：
4.9 mm
晶体管类型：
1 N-Channel
宽度：
3.9 mm
品牌：
英飞凌科技
产品类别：
MOSFET
出厂包装数量：
4000
子类别：
MOSFET
第 # 部分别名：
SP001559832
单位重量：
0.019048 oz
Tags
IRF7403TRP, IRF7403T, IRF7403, IRF740, IRF74, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
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***ical
Trans MOSFET N-CH Si 30V 8.5A 8-Pin SOIC Tube
***roFlash
Power Field-Effect Transistor, 6.7A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
N CHANNEL MOSFET, 30V, 8.5A, SOIC; Trans; N CHANNEL MOSFET, 30V, 8.5A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:8.5A; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2.5W; No. of Pins:8
***ure Electronics
Si4830CDY Series Dual N-Channel 30 V 20 mOhm 2.9 W Surface Mount Mosfet - SOIC-8
***(Formerly Allied Electronics)
MOSFET,Dual N-Ch,VDSS 30V,RDS(ON) 0.017Ohm,ID 5.7A,SO-8,PD 1.1W,VGS +/-20V,gFS 1
***ical
Trans MOSFET N-CH 30V 7.5A 8-Pin SOIC N T/R
***(Formerly Allied Electronics)
MOSFET; N-Ch; Vds 30V; Vgs +/- 20V; Rds(on) 20mohm; Id 10.9A; SO-8; Pd 5W
***ure Electronics
N-Channel 30 V 0.024 Ohm 5 W Surface Mount Power Mosfet - SOIC-8
***ment14 APAC
MOSFET, N-CH, 30V, 10.9A, SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:10.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:10.9A; Power Dissipation Pd:5W; Voltage Vgs Max:20V
***(Formerly Allied Electronics)
SI4410DYPBF N-channel MOSFET Transistor, 10 A, 30 V, 8-Pin SOIC | Infineon SI4410DYPBF
***ure Electronics
Single N-Channel 30 V 0.0135 Ohm 30 nC HEXFET® Power Mosfet - SOIC-8
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low Switching Losses; Low Conduction Losses
***ical
Trans MOSFET N-CH 30V 10A 8-Pin SOIC N T/R
***ment14 APAC
N CHANNEL MOSFET, 30V, 10A; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:30V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:1V
***nell
MOSFET, N LOGIC SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0135ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 10A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 50A; SMD Marking: SI4410DY; Termination Type: Surface Mount Device; Voltage Vgs th Min: 1V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.0085Ohm;ID 11A;SO-8;PD 2.5W;VGS +/-18V;-55
***icroelectronics
N-Channel 30V - 0.009 Ohm - 11A - SO-8 LOW GATE CHARGE StripFET(TM) II POWER MOSFET
***ark
N CHANNEL MOSFET, 30V, 11A, SOIC, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11A; On Resistance Rds(on):0.0085ohm; Transistor Mounting:Surface Mount; Threshold Voltage Vgs:1V RoHS Compliant: Yes
***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0085ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 11A; Current Temperature: 25°C; External Depth: 5.2mm; External Length / Height: 1.75mm; External Width: 4.05mm; Full Power Rating Temperature: 25°C; No. of Transistors: 1; On State Resistance @ Vgs = 4.5V: 19mohm; On State resistance @ Vgs = 10V: 10.5mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Ptot Max: 2.5W; Pulse Current Idm: 44A; Row Pitch: 6.3mm; SMD Marking: STS11NF30L; Voltage Vds Typ: 30V; Voltage Vgs Max: 1V; Voltage Vgs Rds on Measurement: 10V
***ure Electronics
Single N-Channel 30 V 0.03 Ohm 19 nC HEXFET® Power Mosfet - SOIC-8
*** Source Electronics
MOSFET N-CH 30V 7.3A 8-SOIC / Trans MOSFET N-CH Si 30V 7.3A 8-Pin SOIC T/R
***ment14 APAC
N CHANNEL MOSFET, 30V, 7A; Transistor PO; Polarity:N Channel; Continuous Drain Current Id:7A; Source
***nsix Microsemi
Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.3A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.03ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipat
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
型号 制造商 描述 库存 价格
IRF7403TRPBF
DISTI # V72:2272_13889761		Infineon Technologies AGTrans MOSFET N-CH Si 30V 8.5A 8-Pin SOIC T/R
RoHS: Compliant		64
  • 25:$0.5615
  • 10:$0.5679
  • 1:$0.6444
IRF7403TRPBF
DISTI # IRF7403PBFCT-ND		Infineon Technologies AGMOSFET N-CH 30V 8.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2972In Stock
  • 1000:$0.4376
  • 500:$0.5543
  • 100:$0.7148
  • 10:$0.9040
  • 1:$1.0200
IRF7403TRPBF
DISTI # IRF7403PBFDKR-ND		Infineon Technologies AGMOSFET N-CH 30V 8.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2972In Stock
  • 1000:$0.4376
  • 500:$0.5543
  • 100:$0.7148
  • 10:$0.9040
  • 1:$1.0200
IRF7403TRPBF
DISTI # IRF7403PBFTR-ND		Infineon Technologies AGMOSFET N-CH 30V 8.5A 8-SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		On Order
  • 4000:$0.3966
IRF7403TRPBF
DISTI # 27158593		Infineon Technologies AGTrans MOSFET N-CH Si 30V 8.5A 8-Pin SOIC T/R
RoHS: Compliant		2135
  • 35:$0.2774
IRF7403TRPBF
DISTI # 30227256		Infineon Technologies AGTrans MOSFET N-CH Si 30V 8.5A 8-Pin SOIC T/R
RoHS: Compliant		64
  • 25:$0.5615
IRF7403TRPBF
DISTI # IRF7403TRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 8.5A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7403TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 4000:$0.2959
  • 8000:$0.2859
  • 16000:$0.2749
  • 24000:$0.2659
  • 40000:$0.2609
IRF7403TRPBF
DISTI # 13AC9193		Infineon Technologies AGMOSFET, N-CH, 30V, 8.5A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:8.5A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.022ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Power Dissipation RoHS Compliant: Yes3451
  • 1:$0.8500
  • 10:$0.7210
  • 25:$0.6650
  • 50:$0.6100
  • 100:$0.5540
  • 250:$0.5220
  • 500:$0.4900
  • 1000:$0.3870
IRF7403TRPBF
DISTI # 70017429		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 30V,RDS(ON) 0.022Ohm,ID 8.5A,SO-8,PD 2.5W,VGS +/-20V,VF
RoHS: Compliant		0
  • 4000:$0.9200
IRF7403TRPBFInfineon Technologies AGSingle N-Channel 30 V 0.022 Ohm 57 nC HEXFET Power Mosfet - SOIC-8
RoHS: Compliant		4000Reel
  • 4000:$0.3150
IRF7403TRPBFInternational Rectifier 
RoHS: Not Compliant		5304
  • 1000:$0.3400
  • 500:$0.3600
  • 100:$0.3800
  • 25:$0.3900
  • 1:$0.4200
IRF7403TRPBF
DISTI # 942-IRF7403TRPBF		Infineon Technologies AGMOSFET MOSFT 30V 8.5A 22mOhm 38nC
RoHS: Compliant		6509
  • 1:$0.8500
  • 10:$0.7210
  • 100:$0.5540
  • 500:$0.4900
  • 1000:$0.3870
  • 4000:$0.3430
IRF7403TRPBF
DISTI # 9154957P		Infineon Technologies AGMOSFET N-CHANNEL HEXFET 30V 8.5A SOIC8, RL1100
  • 200:£0.4010
  • 1000:£0.2970
  • 2000:£0.2740
  • 5000:£0.2510
IRF7403TRPBF
DISTI # C1S322000484326		Infineon Technologies AGTrans MOSFET N-CH Si 30V 8.5A 8-Pin SOIC T/R
RoHS: Compliant		64
  • 25:$0.5702
  • 10:$0.5724
IRF7403TRPBF
DISTI # 2725902		Infineon Technologies AGMOSFET, N-CH, 30V, 8.5A, SOIC
RoHS: Compliant		3461
  • 1:$1.3500
  • 10:$1.1500
  • 100:$0.8770
  • 500:$0.7750
  • 1000:$0.6130
  • 4000:$0.5850
IRF7403TRPBF.
DISTI # 1374983		Infineon Technologies AGN CHANNEL MOSFET, 30V, 8.5A, SOIC
RoHS: Compliant		0
  • 1:$1.3500
  • 10:$1.1500
  • 100:$0.8770
  • 500:$0.7750
  • 1000:$0.6130
  • 4000:$0.5670
IRF7403TRPBF
DISTI # 2725902		Infineon Technologies AGMOSFET, N-CH, 30V, 8.5A, SOIC
RoHS: Compliant		3596
  • 5:£0.5880
  • 25:£0.5650
  • 100:£0.4090
  • 250:£0.3940
  • 500:£0.3780
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可用性
库存:
Available
订购:
1988
输入数量:
IRF7403TRPBF的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$0.84
US$0.84
10
US$0.72
US$7.21
100
US$0.55
US$55.40
500
US$0.49
US$245.00
1000
US$0.39
US$387.00
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