TPS1101DG4

Mfr. #:: TPS1101DG4
描述:: MOSFET P-CH 15V 2.3A 8-SOIC
生命周期:: 制造商新产品。
数据表:: TPS1101DG4 数据表
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Tags: TPS1101D, TPS1101, TPS110, TPS11, TPS1, TPS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TPS1101DG4 描述

***as Instruments: Single P-channel Enhancement-Mode MOSFET 8-SOIC

***ical: Trans MOSFET P-CH Si 15V 2.3A 8-Pin SOIC Tube

***ser: Power Supply Support Single P-Ch Enh-Mode MOSFET

***ponent Stockers USA: 2300 mA 15 V P-CHANNEL Si SMALL SIGNAL MOSFET

*** Stop Electro: Small Signal Field-Effect Transistor, 2.3A I(D), 15V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

***ark: MOSFET; Drain Source Voltage, Vds:-15V; On Resistance, Rds(on):90mohm; No. of Pins:8; Leaded Process Compatible:Yes; Package/Case:8-SOIC; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes

***et: Transistor MOSFET Array Dual N-CH 12V 2A 6-Pin X2-DFN1010 T/R

***i-Key: MOSFET 2N-CHA 12V 2A DFN1310

***(Formerly Allied Electronics): MOSFET, Power;P-Ch;VDSS -12V;RDS(ON) 7 Milliohms;ID -16A;SO-8;PD 2.5W;VGS +/-8V

***ark: Mosfet Transistor, P Channel, 16 A, 12 V, 7 Mohm, -4.5 V, -900 Mv

***eco: Transistor MOSFET Positive Channel 20 Volt 16A 8-Pin SOIC

***ure Electronics: Single P-Channel 12 V 7 mOhm 91 nC HEXFET® Power Mosfet - SOIC-8

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Industry-Standard Pinout; P-Channel MOSFET

***ineon SCT: -12V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***nell: MOSFET, P, SO-8; Transistor Polarity: P Channel; Continuous Drain Current Id: 16A; Drain Source Voltage Vds: -12V; On Resistance Rds(on): 0.007ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -900mV; Power Dissipat

***(Formerly Allied Electronics): MOSFET, Power;Dual P-Ch;VDSS -12V;RDS(ON) 17 Milliohms;ID -9.2A;SO-8;PD 2W;-55de

***ark: Mosfet Transistor, Dual P Channel, 9.2 A, 12 V, 17 Mohm, -4.5 V, -900 Mv

***eco: Transistor MOSFET Positive Channel 12 Volt 9.2A 8-Pin SOIC T/R

***et Europe: Transistor MOSFET Array Dual P-CH 12V 9.2A 8-Pin SOIC T/R

***ure Electronics: Dual P-Channel 12 V 17 mOhm 38 nC HEXFET® Power Mosfet - SOIC-8

***ineon: Benefits: RoHS Compliant; Low RDS(on); Dual P-Channel MOSFET

***nell: MOSFET, DUAL, PP, LOGIC, SO-8; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: 9.2A; Drain Source Voltage Vds: -12V; On Resistance Rds(on): 0.017ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -9

***ure Electronics: Single N-Channel 12 V 0.0027 Ohm Surface Mount Power Mosfet - SOIC-8

***et: Trans MOSFET N-CH 12V 22.5A 8-Pin SOIC N T/R

***ark: Mosfet, N Channel, 12V, 34A, Soic-8, Full Reel; Channel Type:n Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:34A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:4.5V; Power Dissipation:5.7W Rohs Compliant: Yes

***nell: MOSFET, N CH, 12V, 0.0021OHM, 34A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:34A; Drain Source Voltage Vds:12V; On Resistance Rds(on):0.0021ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:5.7W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-

***ure Electronics: Si9933CDY Series Dual P-Channel 20 V 58 mOhm Surface Mount Power Mosfet - SOIC-8

***enic: 20V 4A 58m´Î@4.5V4.8A 3.1W 1.4V@250Ã×A 2 P-Channel SOIC-8_150mil MOSFETs ROHS

***nell: MOSFET, PP CH, 20V, 8SOIC; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-4A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.048ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1.4V; Power Dissipation Pd:3.1W; Operating Temperature Min:-50°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-50°C to +150°C

***et: Transistor MOSFET Array Dual P-CH 12V 6.7A 8-Pin SOIC T/R

***ure Electronics: DUAL P-CH MOSFET SO-8 12V 18MOHM @ 4.5V- LEAD(PB) AND HALOGEN FREE

***enic: 12V 6.7A 18m´Î@4.5V8.9A 1.1W 1V@350Ã×A 2 P-Channel SOIC-8_150mil MOSFETs ROHS

Market price

型号	描述	库存	价格
TPS1101DG4 DISTI # TPS1101DG4-ND	MOSFET P-CH 15V 2.3A 8-SOIC RoHS: Compliant Min Qty: 375 Container: Tube	Temporarily Out of Stock	375:$1.6500
TPS1101DG4 DISTI # 595-TPS1101DG4	MOSFET Single P-Ch Enh-Mode MOSFET RoHS: Compliant	0

图片	型号	描述
	Mfr.#: TPS1100PWR OMO.#: OMO-TPS1100PWR	MOSFET NPN Enh Mode
	Mfr.#: TPS1100PW OMO.#: OMO-TPS1100PW	MOSFET Single P-Ch Enh-Mode MOSFET
	Mfr.#: TPS1120DG4 OMO.#: OMO-TPS1120DG4	MOSFET Dual P-Ch Enh-Mode MOSFET
	Mfr.#: TPS1101D OMO.#: OMO-TPS1101D-TEXAS-INSTRUMENTS	Darlington Transistors MOSFET Single P-Ch Enh-Mode MOSFET
	Mfr.#: TPS1100DR OMO.#: OMO-TPS1100DR-TEXAS-INSTRUMENTS	RF Bipolar Transistors MOSFET Single P-Ch Enh-Mode MOSFET
	Mfr.#: TPS1101DE4 OMO.#: OMO-TPS1101DE4-1190	全新原装
	Mfr.#: TPS1110DR OMO.#: OMO-TPS1110DR-1190	全新原装
	Mfr.#: TPS1117RGYT OMO.#: OMO-TPS1117RGYT-1190	全新原装
	Mfr.#: TPS1120 OMO.#: OMO-TPS1120-1190	全新原装
	Mfr.#: TPS1120DRG4 OMO.#: OMO-TPS1120DRG4-1190	MOSFET Dual P-Ch Enh-Mode MOSFET

TPS1101DG4

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes